Enhancement of the emission yield of silicon nanocrystals in silica due to surface passivation

The ability of surface passivation to enhance the photoluminescence (PL) emission of Si nanocrystals in SiO₂ has been investigated. Silicon precipitation in implanted samples takes place in a time scale of few minutes at 1100°C. For longer annealing at the same temperature, the PL intensity of the Si nanocrystals increases and eventually reaches saturation, while it correlates inversely with the amount of Si dangling bonds at the Si–SiO₂ interface (P_b centers), as measured by electron spin resonance. This combined behavior is independent on the silica matrix properties, implantation profiles and annealing atmosphere and duration. The observation that the light emission enhancement is directly related to the annealing of P_b centers is confirmed by treatment in forming gas. This mild hydrogenation at much lower temperature (450°C) leads to a complete passivation of the P_b defects, increasing at the same time the PL yield and the lifetime.     

Chaotic resonance: A simulation

Stochastic resonance is a statistical phenomenon that has been observed in periodically modulated, noise-driven, bistable systems. The characteristic signatures of the effect include an increase in the signal-to-noise of the output as noise is added to the system, and exponentially decreasing peaks in the probability density as a function of residence times in one state. Presented are the results of a numerical simulation where these same signatures were observed by adding achaotic driving term instead of a white noise term. Although the probability distributions of the noise and chaos inputs were significantly different, the stochastic and chaotic resonances were equal within the experimental error.     

Measurement of Hartmann-Hahn cross-polarization dynamics with quenching of proton T1ρ relaxation dependence

A simple modification of the standard cross-polarization method designed for quenching the proton T_1ρ dependence when studying polarization transfer is presented. It is demonstrated that by using this simple procedure, new and subtle details of cross-polarization dynamics, previously hidden by the T_1ρ(¹H) effect, can be observed in dipolar-coupled spin systems.     

Spectroscopic Studies of 1-Aryl-2,2-Dichlorocyclopropanes

Seventeen 1-aryl-2,2-dichlorocyclopropanes were examined by using IR, ¹³C NMR, and mass spectrometry. The data obtained from IR and ¹³C NMR spectra indicate that the bond strength of carbon-chlorine on the cyclopropane ring and the electron density of that carbon depend on the substituent. The mass fragmentation patterns of compounds in this series resemble those of the dibromo analogues. The fragmentation mechanism is proposed to involve the formation of indenium ion through an electrocyclization.     

灰色模型的最优化及其参数的直接求法

基于灰色模型的内涵表达式和白化方程响应式均为等比级数的观点,提出了一种不用求ago值、均值,不涉及灰色微分方程,白化微分方程概念,直接求灰色模型参数a,c的方法,通过此方法建立的新模型不仅从理论上可保证是在满足给定评价标准为模拟绝对误差平方和最小(或模拟相对误差平方和最小)、给定精度条件下的最优化模型,从而结束了灰色模型只有更优,没有最优的历史.并从理论上证明了新模型具有白化指数律重合性、白化系数律重合性,伸缩变换一致性.最后通过实例编程验证该方法具有可操作性,且预测精度高,效果好.     

Number albedo measurements from stratified layers of iron,concrete and aluminium

A layer of stratified combination composed of selected radiation shielding materials acquires better shielding property. Albedo is used in such measurements as an integral measure ofγ-ray scattering. The stratified slabs of alternating heterogeneous layers have been found to have a virtual homogeneous property with a definite effective atomic number. The angular distribution of back-scattered photons as well as the total number albedo values for iron, aluminium and concrete in stratified combination for 662 keV and 1250 keV photons are reported.     

Experimental verification of drop/impact simulation for a cellular phone

Conducting drop tests to investigate impact behavior and identify failure mechanisms of small-size electronic products is generally expensive and time-consuming. Nevertheless, strict drop/impact performance criteria for hand-held electronic products such as cellular phones play a decisive role in the design because they must withstand unexpected shocks. The design of product durability on impact has heavily relied on the designer's intuition and experience. In this study, a reliable drop/impact simulation for a cellular phone is carried out using the explicit code LS-DYNA. Subsequently globallocal experimental verification is accomplished by means of high-speed photography and impact response measurement. Using this methodology, we predict potential damage locations in a cellular phone and compare them with real statistical data. It is envisaged that development of a reliable methodology of drop/impact simulation will provide us with a powerful and efficient vehicle for improvement of the design quality and reduction of the product development cycle.     

Application of the stabilization method to interacting resonances

The stabilization method is applied to the case of interacting resonances in the photo-dissociation of van der Waals clusters composed by a rare gas atom bound to a dihalogen molecule. The study of an illustrative two-dimensional model consisting in a T-shaped NeI₂ molecule shows the adequacy of the method whenever the projection of the stabilization wave functions on the assumed prepared initial state is accounted for. The agreement of the fragmentation cross-sections with some previous results using the effective resolvent method and accurate close-coupling calculations is excellent. The method reveals its utility as a complementary tool since allows, through the analysis of the stabilization wave function in terms of zero-order levels, a precise characterization of the resonant states involved. Received 5 April 2002 / Received in final form 24 May 2002 Published online 19 July 2002     

Full-Wave Analyses for a Multi-Layered Microstrip Patch Antenna

This paper describes numerical modelling of a dual band multi-layered microstrip patch antenna operating at 35GHz on an in-house semi-insulating GaAs substrate. The simulated and measured resonant frequencies at both lower and upper resonant frequencies will be compared to check the accuracy of the different numerical modelling techniques.