New molecular compound precursor for aluminum chemical vapor deposition

A new type of precursor for aluminum chemical vapor deposition (Al‐CVD) has been developed by mixing dimethylaluminum hydride (DMAH) and trimethylaluminum (TMA). The new precursor has proven itself to be effective for Al‐CVD, where a good selectivity between the Si and the SiO₂ mask, a 3.0 μΩ cm resistivity and a pure Al film with low C and O contamination levels (under 100 ppm) were achieved. Quadrupole mass and infrared absorption analysis have shown that the precursor contains a new molecular compound, consisting of a DMAH monomer and a TMA monomer. The mixture has lower viscosity than DMAH and can be easily bubbled for a stable precursor vapor supply. Copyright © 2000 John Wiley & Sons, Ltd.     

ChemInform Abstract: Metastable Isonitrosyl Structure of the Nitroprusside Anion Confirmed by Nuclear Inelastic Scattering.

ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 100 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a “Full Text” option. The original article is trackable via the “References” option.     

ChemInform Abstract: NMR Chemical Shifts in the Fluorocarbonate Ion FCO-2: A Comparative Study of Experimental and Theoretical IGLO NMR Results.

ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 100 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a “Full Text” option. The original article is trackable via the “References” option.