机载海洋激光测深系统参量设计与最大探测深度能力分析

详细讨论了机载海洋激光测深系统最大测量深度与相关因子之间的关系，并利用最小可探测信噪比为判据，对机载海洋激光测深系统在白天和晚上工作进行了数值模拟，通过比较最大测量深度与激光脉冲峰值功率、接收视场角、接收口径和光谱接收带宽等关系，确定了系统的主要参量。以确定的参量建立的系统具有白天49m和晚上65m的最大测深能力，可完全满足在沿岸带以及岛礁的测量要求。     

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研制出了用于计算氚投料量在FEB聚变堆各个子系统中的分布及其随时间变化的数值模拟程序包SWITRIM。通过近5年的使用，表明其运行良好、计算结果可靠。用SWITRIM数值模拟研究了聚变堆起动过程中的“氚坑深度和氚坑时间”新现象。简单介绍了SWITRIM程序包的组成和用户使用说明以及最新的运用等。     

Oxygen diffusion in SrCe<Subscript>0.95</Subscript>Yb<Subscript>0.05</Subscript>O<Subscript>3−δ</Subscript>

¹⁸O/¹⁶O isotope exchange depth profiling (IEDP) combined with secondary ion mass spectrometry (SIMS) has been used to measure the oxygen tracer diffusivity of SrCe_0.95Yb_0.05O_3– between 800 °C and 500 °C at a nominal pressure of 200 mbar. The values of D* (oxygen tracer diffusion coefficient) and k (surface exchange coefficient) increase steadily with increasing temperature, and the activation energies are 1.13 eV and 0.96 eV, respectively. Oxygen ion conductivities have been calculated using the Nernst–Einstein equation. The transport number for oxide ions at 769 °C, the highest temperature studied, is only ~0.05. Moreover, SrCe_0.95Yb_0.05O_3– has been studied using impedance spectroscopy under dry O₂, wet O₂ and wet H₂ (N₂/10% H₂) atmospheres, over the range 850–300 °C. Above ~550 °C, SrCe_0.95Yb_0.05O_3– shows higher conductivity in dry O₂ than in wet O₂ or wet H₂; below that temperature the results obtained for the three atmospheres are comparable. Dry O₂ shows the highest activation energy (0.77 eV); the activation energies for wet O₂ and wet H₂ are identical (0.62 eV).Abbreviations HTPC high-temperature proton conductor - IEDP isotope exchange depth profiling - SIMS secondary ion mass spectrometryPresented at the OSSEP Workshop Ionic and Mixed Conductors: Methods and Processes, Aveiro, Portugal, 10–12 April 2003     

Error surface calculations on the parameters defining oxygen depth profile models fitted to ARXPS data obtained from polystyrene exposed to an oxygen/helium plasma

Error surfaces are calculated for the fitting of concentration–depth profiles to angle‐resolved x‐ray photoelectron spectroscopy (ARXPS) data. The shapes of the error surfaces indicate that model parameters related to composition (especially at the very surface of the sample) are well constrained by the data, whereas parameters related to depth have a less significant impact on the fit. It is then shown that certain parameters in the different depth profile models employed are highly correlated and that the different models convey essentially the same information in different ways. Finally, a compromise profile definition is proposed for the fitting of constrained but flexible depth profiles to ARXPS data. Copyright © 2003 John Wiley & Sons, Ltd.     

Eco-dyeing and functional finishing of wool fabric based on Portulaca oleracea L. as colorant and Musa basjoo as natural mordant

Biomass energy is the most acknowledged renewable resource due to its universality, richness, and renewability. This study utilized a Portulaca oleracea L. plant as a natural colorant for wool fabric dyeing with a high color yield at optimum extraction and dyeing conditions. To evaluate the dyeing mechanism and feasibility of the extracted dyes, we analyzed and characterized the molecular structure and nano-level particle size. The dyeing kinetics and the morphology of dyed fabrics were integratedly explored; the adsorption process of wool fabric on natural colorant molecules was increasingly in line with the pseudo-second-order kinetic adsorption model. Further, the dyeing effects of wool fabrics were compared to that of Musa basjoo mordant and synthetic dyes to confirm the superior color depth (K/S value 23.53), biological function as anti-ultraviolet (UPF value 253.47), and anti-bacterial activity (antibacterial rate of Staphylococcus aureus/Escherichia coli was 71.3%/37%). Our findings provide a feasible scheme for providing deep color and biological activity to wool fabrics. This has broad application prospects in the field of eco-friendly textile materials.     

Cathodoluminescence Depth Profiling in SiO2:Ge Layers

 For investigation of the luminescent center profile cathodoluminescence measurements are used under variation of the primary electron energy E ₀ = 2…30 keV. Applying a constant incident power regime (E ₀·I ₀ = const), the depth profiles of luminescent centers are deduced from the range of the electron energy transfer profiles dE/dx. Thermally grown SiO₂ layers of thickness d = 500 nm have been implanted by Ge⁺-ions of energy 350 keV and doses (0.5–5)10¹⁶ ions/cm². Thus Ge profiles with a concentration maximum of (0.4 – 4) at% at the depth of d_m≅240 nm are expected. Afterwards the layers have been partially annealed up to T _a = 1100 °C for one hour in dry nitrogen. After thermal annealing, not only the typical violet luminescence (λ = 400 nm) of the Ge centers is strongly increased but also the luminescent center profiles are shifted from about 250 nm to 170 nm depth towards the surface. This process should be described by Ge diffusion processes, precipitation and finally Ge nanocluster formation. Additionally, a Ge surface layer is piled-up extending to a depth of roughly 25 nm.     

Influence of surface structure on surface analytical statements

The influence of surface structure of technical materials on results and statements of surface analytical methods has been investigated. Especially surface roughness as a typical property of rolled products has been observed. For this purpose samples of steel (technical surface, roughness up to 5 m) and silicon wafers (polished surface) have been analyzed by SNMS and GDOS in order to get information about changes of the surface roughness as function of the sputtering time and their influence on the statements about the depth profiles obtained.     

Development of B‐doped Si multiple delta‐layer reference materials for SIMS profiling

B‐doped Si multiple delta‐layers (MDL) were developed as certified reference materials (CRM) for secondary ion mass spectrometry (SIMS) depth profiling analysis. Two CRMs with different delta‐layer spacing were grown by ion beam sputter deposition (IBSD). The nominal spacing of the MDL for shallow junction analysis is 10 nm and that for high energy SIMS is 50 nm. The total thickness of the film was certified by high resolution transmission electron microscopy (HR‐TEM). The B‐doped Si MDLs can be used to evaluate SIMS depth resolution and to calibrate the depth scale. A consistency check of the calibration of stylus profilometers for measurement of sputter depth is another possible application. The crater depths measured by a stylus profilometer showed a good linear relationship with the thickness measured from SIMS profiling using the calibrated film thickness for depth scale calibration. The sputtering rate of the amorphous Si thin film grown by sputter deposition was found to be the same as that of the crystalline Si substrate, which means that the sputtering rate measured with these CRMs can be applied to a real analysis of crystalline Si. Copyright © 2005 John Wiley & Sons, Ltd.     

大口径光学元件波前调制PSD模拟分析

 使用PSD作为大口径光学元件表面加工质量的评价参数，针对不同的波前调制进行了初步的模拟计算，得到了不同调制频率和不同调制深度情况下的PSD曲线变化情况。当调制频率不同时，PSD曲线的突变部分会发生相应的频移，调制频率高则突变发生在空间频率较高的频段，同时PSD峰值不变。相对应调制深度不同时，PSD曲线的突变部份峰值发生变化，调制深度大则峰值大，与此同时峰值出现的位置不会发生变化。计算和分析结果表明PSD分析结果能够在频率域反应出元件表面受到的不同程度的调制信息。     

深水域近水面水下爆炸水柱形态及演变实验研究

 为研究不同起爆深度的水下爆炸水柱形态及演变特征,进行了1 kg球形RDX装药在不同起爆深度下的海上爆炸实验,通过高速摄像机记录装药起爆后水柱的形成和成长过程,获得了喷射水柱形态的演变特征以及水柱高度、直径、水柱突出水面时间等参数的变化规律,并与Cole、Hole和Swisdak等人的研究结果进行对比分析。研究结果表明：对于深水域近水面水下爆炸,水柱以垂直喷射形态为主,当气泡在膨胀阶段到达水面时水柱存在微弱的径向飞散现象;水柱最大高度随起爆深度呈脉动变化,水柱直径随起爆深度线性减小;Swisdak关于水柱最大高度的计算公式不适用深水域近水面水下爆炸情况。