带有无限到达源的Re-entrant Line的稳定性

用Foster判别准则,Weiss[13]给出了带有无限到达源的两站三步re-entrant line的稳定性的充分条件．本文用两种不同的方法得到了其稳定性的充分必要条件,即: 二维随机游动方法和Foster判别准则．同时,我们又用流体模型方法得到了系统稳定的充分条件,大大地简化了Weiss[13]的证明．     

用干涉方法测量薄膜应力

基于基片弯曲法和牛顿环的基本原理,使用He-Ne激光器、扩束镜、凸透镜和带分光镜的移测显微镜,搭建了薄膜应力测量装置.采用直流溅射法制备了厚度为30~144 nm的银薄膜,衬底采用厚度为0.15 mm、直径为18 mm的圆形玻璃片.实验发现,薄膜厚度对银薄膜的内应力有显著的影响,在薄膜厚度很小时,随着薄膜厚度的增加,应力迅速增大,达到最大值后,随着厚度的继续增加,薄膜应力下降较快并趋于稳定值.     

Assessment of thermal expansion coefficient of methylsilsesquioxane thin film

For the methylsilsesquioxane film whose optical birefringence is almost zero, it was recently reported that its vertical thermal expansion coefficient (CTE) was approximately one order of magnitude larger than the lateral CTE. Though the birefringence is not an absolute predictor of anisotropic behavior, the discrepancy in both the CTEs was so remarkable that it was essential to investigate whether the anisotropy was intrinsic property or not. If the effect of Poisson's ratio is considered in the calculation of the vertical CTE and when elastic modulus measured by surface acoustic wave spectroscopy is used in the assessment of the lateral CTE, both the CTEs are coincident with each other. Therefore, it can be concluded that the discrepancy in the CTEs can be attributed to a higher in‐plane polymer chain orientation but it can also arise from the misleadingly assumed modulus and Poisson's ratio. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 3109–3120, 2006     

On disjoint configurations in infinite graphs

For a graph A and a positive integer n, let nA denote the union of n disjoint copies of A; similarly, the union of ?₀ disjoint copies of A is referred to as ?₀A. It is shown that there exist (connected) graphs A and G such that nA is a minor of G for all n??, but ?₀A is not a minor of G. This supplements previous examples showing that analogous statements are true if, instead of minors, isomorphic embeddings or topological minors are considered. The construction of A and G is based on the fact that there exist (infinite) graphs G₁, G₂,… such that G_i is not a minor of G_j for all i ≠ j. In contrast to previous examples concerning isomorphic embeddings and topological minors, the graphs A and G presented here are not locally finite. The following conjecture is suggested: for each locally finite connected graph A and each graph G, if nA is a minor of G for all n ? ?, then ?₀A is a minor of G, too. If true, this would be a far‐reaching generalization of a classical result of R. Halin on families of disjoint one‐way infinite paths in graphs. © 2002 Wiley Periodicals, Inc. J Graph Theory 39: 222–229, 2002; DOI 10.1002/jgt.10016     

用峰面积判据改善Delsuc法预测的谱

基于Prony算法的Delsuc谱预测是目前NMR LPSVD(Linear Prediction SingularValue Decomposition)法中比较实用的方法。但在高噪声的条件下,时有失峰和假峰出现且要事先知道谱的峰数。本文通过跟踪迭代过程发现Delsuc法的判别因子r_(mis) 很难选定。如果它太小会失峰,而过大又会出现假峰。同时,由于噪声的影响,弱信号的采样点之间的相关性比强信号小,从而在迭代过程中会增加数值不稳定性。文中引入峰面积判据来改善Delsuc法,经模拟与实验均证明结果有效。     

幂函数的一些密码学性质

二元域上n数组空间上的非线性置换在分组码，杂凑函数与流密码等密码学领域中有重要应用.域GF（2n）上的幂函数提供了二元域上n数组空间上的一类非线性置换．本文着重研究幂函数的强完全性、完全性与非线性度等密码学性质．作为结果，本文证明了幂函数具有完全性；证明了具有强完全性的函数必有较高的拓扑非线性度；木文找到一类具有强完全性的幂函数；周时也定出了幂函数的代数非线性度．     

QUENCHING PROBLEMS OF DEGENERATE FUNCTIONAL REACTION-DIFFUSION EQUATION

This paper is concerned with the quenching problem of a degenerate functional reaction-diffusion equation. The quenching problem and global existence of solution for the reaction-diffusion equation are derived and, some results of the positive steady state solutions for functional elliptic boundary value are also presented.     

Altered protein synthesis in rat kidney cells exposed to semiconductor materials

It is thought that the extensive industrial use of arsenic, gallium and indium, which have applications as the materials for III–V semiconductors, will increase human exposure to these compounds in the near future. We have undertaken the development of new biological indicators for assessing exposure to these elements. Element-specific alterations in protein synthesis patterns were expected to occur following exposure to arsenic compounds. We examined alterations in protein synthesis in primary cultures of rat kidney proximal tubule epithelial cells by sodium arsenite, gallium chloride and indium chloride, utilizing two-dimensional gel electrophoresis. After incubation with the chemicals for 20 h, newly synthesized proteins were labeled with [³⁵S]methionine. A protein with a molecular weight (M_r) of 30 000 was markedly induced on exposure to 10 μM arsenite or 300 μM gallium chloride, and synthesis of proteins with M_r values of 85 000, 71 000, 65 000, 51 000, 38 000 and 28 000 were also increased by exposure to arsenite and gallium chloride. No significant changes were observed upon exposure to indium. Some of these increased proteins could be heat-shock proteins.     

Large Sample Properties of Mixture Models with Covariates for Competing Risks

We study the large-sample properties of a class of parametric mixture models with covariates for competing risks. The models allow general distributions for the survival times and incorporate the idea of long-term survivors. Asymptotic results are obtained under a commonly assumed independent censoring mechanism and some modest regularity conditions on the survival distributions. The existence, consistency, and asymptotic normality of maximum likelihood estimators for the parameters of the model are rigorously derived under general sufficient conditions. Specific conditions for particular models can be derived from the general conditions for ready check. In addition, a likelihood-ratio statistic is proposed to test various hypotheses of practical interest, and its asymptotic distribution is provided.     

Evolution of stress and strain relaxation of Ge and SiGe alloy films on Si(0 0 1)

The growth of Ge and SiGe alloy films on Si substrates has attracted considerable interest in the last years because of their importance for optoelectronic devices as well as Si-based high speed transistors. Here we give a short overview on our recent real time stress measurements of Ge and SiGe alloy films on Si(0 0 1) performed with a sensitive cantilever beam technique and accompanied by structural investigations with atomic force microscopy. Characteristic features in the stress curves provide detailed insight into the development and relief of the misfit strain. For the Stranski–Krastanow system Ge/Si(0 0 1) as well as for SiGe films with Si contents below 20%, the strain relaxation proceeds mainly into two steps: (i) by the formation of 3D islands on top of the Ge wetting layer; (ii) via misfit dislocations in larger 3D islands and upon their percolation.