离子注入诱导量子阱界面混合效应的光致荧光谱研究

采用多元芯片方法获得了一系列不同离子注入剂量的GaAsAlGaAs非对称耦合量子阱单元,通过光致荧光谱测量,研究了单纯的离子注入导致的界面混合效应.荧光光谱行为与有效质量理论计算研究表明,Al原子在异质结界面的扩散在离子注入过程中已基本完成,而热退火作用主要是去除无辐射复合中心. 关键词： 量子阱 离子注入 光致荧光谱 界面混合     

Binding energy of impurity states in an inverse parabolic quantum well under magnetic field

 We have investigated the effects of the magnetic field which is directed perpendicular to the well on the binding energy of the hydrogenic impurities in an inverse parabolic quantum well (IPQW) with different widths as well as different Al concentrations at the well center. The Al concentration at the barriers was always x_max=0.3. The calculations were performed within the effective mass approximation, using a variational method. We observe that IPQW structure turns into parabolic quantum well with the inversion effect of the magnetic field and donor impurity binding energy in IPQW strongly depends on the magnetic field, Al concentration at the well center and well dimensions.     

CBP/Alq3有机量子阱结构的光致发光

采用多源有机分子气相沉积系统(OMBD)制备了CBP/Alq₃有机多量子阱结构,利用电化学循环伏安特性和吸收光谱、小角X射线衍射、荧光光谱研究了量子阱的能带、结构和光致发光的特性。电化学循环伏安特性和吸收光谱的测量结果表明,CBP的最低占据分子轨道(LUMO)与最高占据分子轨道(HOMO)的位置分别为-2.74,-6.00eV,Alq₃的LUMO与HOMO的位置分别为-3.10,-5.80eV,所以CBP/Alq₃有机量子阱为Ⅰ型量子阱结构。小角X衍射测量显示,在小角的位置(2θ的范围在0°～3°)观察到了对应于量子阱结构的多级布拉格衍射峰,表明多层量子阱结构是有序的层状结构,界面比较完整,界面质量比较好。荧光光谱的研究结果表明,Ⅰ型量子阱结构可以有效地把能量从垒层传递给阱层,从而增强了阱层材料的发光。阱层的厚度对发光峰的位置影响很大,随阱层厚度减小,阱层材料的发光峰出现蓝移现象。并对引起发光峰蓝移的原因进行了讨论。     

Ⅰ类超晶格势阱中能级分布及电子跃迁规律研究

在研究大量实验曲线的基础上,指出势阱所有能级均有一定的宽度,电子或空穴在各能级中出现的概率符合正态分布,从理论上分析了I类超晶格和双势垒单势阱的发光光谱与吸收光谱·解释了GaAs/Ga1-xAlxAs多量子阱和超晶格吸收光谱吸收边及量子阱变窄时各吸收峰的“蓝移现象”及GaAs/Ga1-xAlxAs双势垒单量子阱样品的电流—电压特性曲线及电导—电压特性曲线的特征和出现的“负阻效应”·     

具阻尼项的非线性波动方程的稳定集与不稳定集

本文利用势井理论讨论一类非线性波动方程的初边值问题 .我们构造其稳定集 W和不稳定集 V,证明了当初值属于 W时 ,对 β∈ R整体弱解存在并且利用乘子法得到当 β>0解的指数衰减估计 ;当初值属于 V时 ,而 β<0时 ,解将爆破     

Phonon–replica transitions in InGaN/GaN quantum well structures

A side-bump feature in a photoluminescence (PL) spectrum of an InGaN compound was widely observed. With reasonable fitting to PL spectra with three Gaussian distributions, the temperature variations of the peak positions, integrated PL intensities, and peak widths of the main and first side peaks of three InGaN/GaN multiple quantum well samples with different nominal indium contents are shown and interpreted. The existence of the side peaks is attributed to phonon–replica transitions. The variations of the peak position separations and the decreasing trends of the first side peak widths beyond certain temperatures in those samples were explained with the requirement of phonon momentum condition for phonon–replica transitions. In the sample with 25% nominal indium content, the phonon–replica transition could become stronger than the direct transition of localized states.     

On disjoint configurations in infinite graphs

For a graph A and a positive integer n, let nA denote the union of n disjoint copies of A; similarly, the union of ?₀ disjoint copies of A is referred to as ?₀A. It is shown that there exist (connected) graphs A and G such that nA is a minor of G for all n??, but ?₀A is not a minor of G. This supplements previous examples showing that analogous statements are true if, instead of minors, isomorphic embeddings or topological minors are considered. The construction of A and G is based on the fact that there exist (infinite) graphs G₁, G₂,… such that G_i is not a minor of G_j for all i ≠ j. In contrast to previous examples concerning isomorphic embeddings and topological minors, the graphs A and G presented here are not locally finite. The following conjecture is suggested: for each locally finite connected graph A and each graph G, if nA is a minor of G for all n ? ?, then ?₀A is a minor of G, too. If true, this would be a far‐reaching generalization of a classical result of R. Halin on families of disjoint one‐way infinite paths in graphs. © 2002 Wiley Periodicals, Inc. J Graph Theory 39: 222–229, 2002; DOI 10.1002/jgt.10016     

A Criterion for Spectrum Decomposition

We obtain a necessary and sufficient condition for the decomposition of the spectrum of an arbitrary nonsymmetric potential whose least value is attained at finitely many points.     

Rashba polarization in HgCdTe inversion layers at large depletion charges

The Rashba effect in metal–insulator–semiconductor (MIS) structures based on zero-gap HgCdTe is investigated experimentally and theoretically over a wide doping range N_A–N_D=3×10¹⁵–3×10¹⁸ cm⁻³. Increase of doping enlarges the magnitude of the effect at the same 2D concentration and strengthens a gate-voltage dependence of the Rashba splitting. The results demonstrate values of Rashba polarization as high as P_R0.5 and a capability to control the Rashba effect strength at constant electron concentration.     

Structure theorem for tournaments omitting N5

A finite tournament T is tight if the class of finite tournaments omitting T is well‐quasi‐ordered. We show here that a certain tournament N₅ on five vertices is tight. This is one of the main steps in an exact classification of the tight tournaments, as explained in [10]; the third and final step is carried out in [11]. The proof involves an encoding of the indecomposable tournaments omitting N₅ by a finite alphabet, followed by an application of Kruskal's Tree Theorem. This problem arises in model theory and in computational complexity in a more general form, which remains open: the problem is to give an effective criterion for a finite set {T₁,…,T_k} of finite tournaments to be tight in the sense that the class of all finite tournaments omitting each of T₁,…,T_k is well‐quasi‐ordered. © 2003 Wiley Periodicals, Inc. J Graph Theory 42: 165–192, 2003