Characteristics of transmission of electrons in a quantum wire tangentially attached to a superconductor ring threaded by magnetic flux

We present numerical investigations of the transmission properties of electrons in a normal quantum wire tangentially attached to a superconductor ring threaded by magnetic flux. A point scatterer with a δ -function potential is placed at node to model scattering effect. We find that the transmission characteristics of electrons in this structure strongly depend on the normal or superconducting state of the ring. The transmission probability as a function of the energy of incident electrons, in the case of a superconductor ring threaded by one quantum magnetic flux, emerges one deep dip, imposed upon the first broad bump in spectrum. This intrinsic conductance dip originates from the superconductor state of the ring. When increasing the magnetic flux from one quantum magnetic flux to two, the spectrum shifts toward higher energy region in the whole. This conductance dip accordingly shifts and appears in the second bump. In the presence of a point-scatterer at the node, the spectrum is substantially modified. Based on the condition of the formation of the standing wave functions in the ring and the broken of the time-reserve symmetry of Schr?dinger equation after switching magnetic flux, the characteristics of transmission of electrons in this structure can be well understood. Received 6 November 2001     

Localized bifurcations and defect instabilities in the convection of a nematic liquid crystal

The stationary and the time-dependent homogeneous ordered states in convection may both become unstable against localized perturbations. Defects are then created and they may contribute to the disorganization of the homogeneous state. We present an experimental study of defects in some homogeneous stationary structures as well as in the traveling-wave states of convection of a nematic liquid crystal. We show that the core of the defects is a germ of the unstable state and it can become unstable under the external stress. Then, either fully homogeneous states with the symmetry of the core, or complex disordered states can develop from the local instability of defects in processes quite similar to displacive transitions in solids. Some of the main features are qualitatively similar to numerical simulations of an appropriate Landau-Ginzburg equation.     

Photoluminescence activity of Yang and Secco etched multicrystalline silicon material

Ultraviolet and blue-green photoluminescence (PL) was investigated on multicrystalline silicon (mc-Si) samples chemically etched by Secco and Yang solutions. The samples were characterized by dislocation density (10⁵-10⁶ cm⁻²). The form of etched pits is triangular with Yang etch and like a honeycomb with Secco etch as observed with a scanning electron microscope (SEM). These textures of mc-Si wafers give a PL activity similar to that obtained with nanostructures of porous silicon (PS) as reported in the literature. The ultraviolet PL spectra observed with Yang etch shift to the blue-green spectrum range when applying Secco etch. In our experiments we have observed 3-5 μm diameter macro pores separated by a high density of nanowalls. These observations suggest that the origin of the PL activity are quantum dots resulting from the silicon nanocrystallites obtained after few minutes of chemical etching.     

Surface morphologies of anthracene single crystals grown from vapor phase

The morphologies and lattice structures of anthracene single crystals grown from the vapor phase were investigated using optical microscopy, phase contrast microscopy, atomic force microscopy (AFM), and X-ray diffraction analysis. Common morphologies with hexagonal large planes were observed irrespective of crystal size. The observation of certain surface morphologies with a phase contrast microscopy revealed that the spiral steps originated from screw dislocations present on the (0 0 1) planes. Moreover, the center and edge of the (0 0 1) planes had large curvatures, similar to hills. Resultantly, quarter-monolayer (ML) steps were observed on the large and flat planes between both hills.     

Influence of annealing and chain defects on the melting behaviour of poly(vinylidene fluoride)

The melting behaviour of poly(vinylidene fluoride) (PVDF) was investigated by differential scanning calorimetry (DSC) and small- and wide-angle X-ray scattering in order to study the influence of the chain defects content and of the temperature of annealing on the crystallization and melting behaviour.All the DSC scans show a double endotherm and the analysis of the data suggests that the low temperature endotherm is due to the melting of a population of thin lamellae, whose thickness increases during the annealing, but a high content of chain defects prevents the lamellar thickening and the main effect in this case is the crystallization of thin lamellae from a portion of polymer which did not crystallize during the quenching from the melt. Furthermore, the two melting endotherms, which are observed, can be partially ascribed to a melting-recrystallization process.Furthermore, stepwise isothermal cooling was performed in a differential scanning calorimeter followed by melting scans of fractionated PVDF samples to point out the possible presence of a series of endothermic peaks.     

Anti-Stokes Bands of Intrinsic Radiation in Undoped GaAs Crystals

It has been established that undoped gallium crystals exhibit anti-Stokes radiation with energy corresponding to the interband recombination of these crystals. Its appearance is most probably determined by EL2 defects, and its intensity depends on the product of the cross sections for photoionization of electrons and the holes from these defects.     

First-principles study of indium on silicon (1 0 0)—the structure, defects and interdiffusion

The atomic structures of indium (In) on silicon (Si) (1 0 0)-(2 × 1) surface are investigated by the local density approximation using first-principles pseudopotentials. Total energy optimizations show that the energetically favored structure is the parallel ad-dimer model. The adsorption energy of In on ideal Si(1 0 0)-(1 × 1) surface is significantly higher than that on reconstructed Si(1 0 0)-(2 × 1) surface, suggesting that In adsorption does not break the Si-Si dimer bond of the substrate. When Si surface contains single dimer vacancy defects, In chain will be interrupted, leading to disconnected In nanowires. Displacive adsorption of In on Si(1 0 0) is also considered, and the calculation suggests that interdiffusion of In into Si substrate will not be favorable under equilibrium conditions.     

Microstructure Evolution in Laser RS Co-base Metastable Alloy

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Periodic and subharmonic solutions of a class of subquadratic second-order Hamiltonian systems

Some solvability conditions of periodic and subharmonic solutions are obtained for a class of subquadratic nonautonomous second-order Hamiltonian systems by the minimax methods in critical point theory.