Study of nitrogen ion implantation and diffusion phenomena on thin chromium layers followed by the atomic force microscopy and secondary ion mass spectroscopy techniques characterization

This research investigates the effect of ion implantation dosage level and further thermal treatment on the physical characteristics of chromium coatings on Si(1 1 1) substrates. Chromium films had been exposed to nitrogen ion fluencies of 1 × 10¹⁷, 3 × 10¹⁷, 6 × 10¹⁷ and 10 × 10¹⁷ N⁺ cm⁻² with a 15 keV energy level. Obtained samples had been heat treated at 450 °C at a pressure of 2 × 10⁻² Torr in an argon atmosphere for 30 h. Atomic force microscopy (AFM) images showed significant increase in surface roughness as a result of nitrogen ion fluence increase. Secondary ion mass spectroscopy (SIMS) studies revealed a clear increased accumulation of Cr₂N phase near the surface as a result of higher N⁺ fluence. XRD patterns showed preferred growth of [0 0 2] and [1 1 1] planes of Cr₂N phase as a result of higher ion implantation fluence. These results had been explained based on the nucleation-growth of Cr₂N phase and nitrogen atoms diffusion history during the thermal treatment process.     

The effect of ITO films thickness on the properties of flexible organic light emitting diode

Indium tin oxide (ITO) thin films were deposited on cyclic olefin copolymer substrate at room temperature by an inverse target sputtering system. The crystal structure and the surface morphology of the deposited ITO films were examined by X-ray diffraction and atomic force microscopy, separately. The electrical properties of the conductive films were explored by four-point probing. Visible spectrometer was used to measure the optical properties of ITO-coated films. The performance of the flexible organic light emitting diode device with different thickness anode was investigated in this study.     

Calculated elastic constants of dilute alloys based on bcc metals

The elastic constants of dilute alloys based on bcc metals have been calculated using the Green’s function method obtaining explicit expressions for change in elastic constants in terms oft-matrix. The crystal impurity problem is discussed within an impurity model containing central and non-central force constant changes extended up to second neighbours of the impurity. The effect of volume change on elastic constants and a contribution from electron pressure term are considered. Numerical results for changes in three elastic moduli have been presented for a number of dilute alloys based on Mo, Nb, W, Ta and V.     

Effect of the three-body force on triton asymptotic normalization constants by the hyperspherical harmonics expansion method

We investigate the change in the calculated value of asymptotic normalization constant (ANC) by the hyperspherical harmonics expansion method with the inclusion of three nucleon force (3BF) in addition to two nucleon force. We see that ANC does not change very much with the inclusion of 3BF indicating that the 3BF does not alter the asymptotic behaviours of HHE wavefunction significantly.     

An Improved Anharmonic Force Field of Difluoromethanimine, F2C NH

The anharmonic force field of difluoromethanimine, F₂C NH, has been reinvestigated theoretically using a coupled-cluster singles and doubles approach, augmented for structural optimization and harmonic force field by a contribution of connected triple excitations, CCSD(T). The cubic and quartic force constants have been obtained by numerical derivatives computed from analytical quadratic force constants calculated by second-order Møller-Plesset perturbation theory, MP2. The quadratic force constants and the equilibrium structure of F₂C NH have then been scaled by a global least-squares fitting procedure to the spectroscopic data and parameters experimentally determined for this molecule. This force field, obtained in the internal coordinates space and therefore valid for all isotopomers of difluoromethanimine, yields a complete set of spectroscopic molecular constants providing a critical assessment of the experimental rotational and centrifugal distortion constants, fundamentals, overtones, and combination bands determined so far for F₂C NH. In addition, the final force field can be used to make predictions of all important vibrational and rotational parameters which should be accurate and useful for new spectroscopic investigations.     

Evolution of stress and strain relaxation of Ge and SiGe alloy films on Si(0 0 1)

The growth of Ge and SiGe alloy films on Si substrates has attracted considerable interest in the last years because of their importance for optoelectronic devices as well as Si-based high speed transistors. Here we give a short overview on our recent real time stress measurements of Ge and SiGe alloy films on Si(0 0 1) performed with a sensitive cantilever beam technique and accompanied by structural investigations with atomic force microscopy. Characteristic features in the stress curves provide detailed insight into the development and relief of the misfit strain. For the Stranski–Krastanow system Ge/Si(0 0 1) as well as for SiGe films with Si contents below 20%, the strain relaxation proceeds mainly into two steps: (i) by the formation of 3D islands on top of the Ge wetting layer; (ii) via misfit dislocations in larger 3D islands and upon their percolation.     

Magnetic pole pinning at rectangular defects on MnAs/GaAs(0 0 1)

Strong magnetic poles at characteristic rectangular defects have been observed using a magnetic force microscope on a MnAs(  1 0 0) thin film with the thickness of 30 nm. The MnAs thin film was epitaxially grown on a GaAs(0 0 1) substrate. The magnetic poles were in one-arranging direction, being independent of the magnetization direction of the film. The poles were pinned at the edges of the rectangular defects until just below the Curie temperature, and formed a stable magnetic-field loop on the MnAs surface. The stability of the magnetic pole pinning shows the distinctive feature of the magnetic domain structure on the surface with a strong anisotropy, which was built in the heterostructure of MnAs and GaAs.     

Design and fabrication of fluid controlled dynamic optical lens system

A novel small fluid controlled optical lens system that is capable of displaying dynamic variation of its focal length and field-of-view (FOV) is designed and fabricated. In this active lens system, appropriate volume of the optical fluid can be pumped into or out of the lens chamber to provide double-convex (DCX) or double-concave (DCV) lens effect. Simple optical imaging experiments were performed using different sets of glass lenses with fixed focal lengths to determine the optimum lens configuration required for designing a dynamic optical lens system. The experimental results obtained from the glass lenses demonstrate that a combination of a single DCX lens with three DCV lenses provides a wider FOV. The flexible membranes for fluid controlled lenses were fabricated using polydimethylsiloxane polymer material, which has good optical transparency and elasticity. A simple fluid injection system is used to vary the radius of curvature of the lenses, and thereby to change the focal length. A dynamic optical lens system with a combination of one DCX and multiple variable focal length DCV lenses as designed here can image an object with a wide range of focal length and FOV. With this fluid controlled optical system, the FOV and focal length could be continuously varied and a maximum FOV of 118.3° could be achieved. The smallest f-number (f_/#) for this fluid controlled single lens system was found to be 1.3, which corresponds to the numerical aperture value of 0.35.     

Quantitative measurement of tip-sample forces by dynamic force spectroscopy in ambient conditions

We introduce a dynamic force spectroscopy technique enabling the quantitative measurement of conservative and dissipative tip-sample forces in ambient conditions. In difference to the commonly detected force-vs-distance curves dynamic force microscopy allows to measure the full range of tip-sample forces without hysteresis effects caused by a jump-to-contact. The approach is based on the specific behavior of a self-driven cantilever (frequency-modulation technique). Experimental applications on different samples (Fischer-sample, silicon wafer) are presented.     

共轴均匀带电薄圆盘间的相互作用力

本文利用静电场的高斯定律和环路定律巧妙地求出了均匀带电圆盘在空间任一点所产生的电场 ,进而计算出了共轴均匀带电薄圆盘之间的相互作用力