Growth and Characterization of A1GaN/A1N/GaN HEMT Structures with a Compositionally Step-Graded A1GaN Barrier Layer

A new A1GaN/A1N/GaN high electron mobility transistor （HEMT） structure using a compositionally step-graded A1GaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition （MOCVD）. The structure demonstrates significant enhancement of two-dimensional electron gas （2DEG） mobility and smooth surface morphology compared with the conventional HEMT structure with high A1 composition A1GaN barrier. The high 2DEG mobility of 1806 cm2/Vs at room temperature and low rms surface roughness of 0.220 nm for a scan area of 5μm×5 μm are attributed to the improvement of interracial and crystal quality by employing the stepgraded barrier to accommodate the large lattice mismatch stress. The 2DEG sheet density is independent of the measurement temperature, showing the excellent 2DEG confinement of the step-graded structure. A low average sheet resistance of 314.5Ω/square, with a good resistance uniformity of 0.68%, is also obtained across the 50 mm epilayer wafer. HEMT devices are successfully fabricated using this material structure, which exhibits a maximum extrinsic transconductance of 218 mS/ram and a maximum drain current density of 800 mA/mm.     

Five-Dimensional Cosmological Model with Variable G and A

Einstein＇s field equations with C and A both varying with time are considered in the presence of a perfect fluid for five-dimensional cosmological model in a way which conserves the energy momentum tensor of the matter content. Several sets of explicit solutions in the five-dimensional Kaluza-Klein type cosmological models with variable G and A are obtained. The diminishment of extra dimension with the evolution of the universe for the five-dimensional model is exhibited. The physical properties of the models are examined.     

Possible Way to Synthesize Superheavy Element Z=117

Within the framework of the dinuclear system model, the production of superheavy element Z = 117 in possible projectile-target combinations is analysed systematically. The calculated results show that the production cross sections are strongly dependent on the reaction systems. Optimal combinations, corresponding excitation energies and evaporation channels are proposed, such as the isotopes^248.249 Bk in ^48 Ca induced reactions in 3n evaporation channels and the reactions ^45Sc＋246.248Cm in 3n and 4n channels, and the system ^51 V＋ 244pu in 3n channel.     

Creep Motion in Two-Dimensional Fully Frustrated Coulomb Gas Model

The creep motion in a two-dimensional fully frustrated square lattice Coulomb gas model with disorders is studied by using the Monte Carlo technique. The dependence of charge current density J on electric field E is investigated at low temperature T and at low E. The results show that the creep obeys the Arrhenius law J - C（T） exp[-U（E）/T]. The prefactor C（T） increases with the temperature in a power law relation with an exponent about 3.0. The energy barrier U （ E） increases logarithmically with Ec,/ E as U （ E） - Uo ln（ Ec/ E） with Ec being the critical field at zero temperature.     

Bounce-Averaged Acceleration of Energetic Electrons by Whistler Mode Chorus in the Magnetosphere

We construct the bounce-averaged diffusion coefficients and study the bounce-averaged acceleration for energetic electrons in gyroresonance with whistler mode chorus. Numerical calculations have been performed for a band of chorus frequency distributed over a standard Gaussian spectrum specifically in the region near L = 4.5, where peaks of the electron phase space density occur. It is found that whistler mode chorus can efficiently accelerate electrons and can increase the phase space density at energies of about 1 MeV by more than one order of magnitude about one day, in agreement with the satellite observations during the recovery phase of magnetic storms.     

A threshold voltage model MOSFETs considering for high-k gate-dielectric fringing-field effect

In this paper, a threshold voltage model for high-k gate-dielectric metal-oxide-semiconductor field-effect transistors （MOSFETs） is developed, with more accurate boundary conditions of the gate dielectric derived through a conformal mapping transformation method to consider the fringing-field effects including the influences of high-k gate-dielectric and sidewall spacer. Comparing with similar models, the proposed model can be applied to general situations where the gate dielectric and sidewall spacer can have different dielectric constants. The influences of sidewall spacer and high-k gate dielectric on fringing field distribution of the gate dielectric and thus threshold voltage behaviours of a MOSFET are discussed in detail.     

质量起源——量子色动力学与质量起源

 ……有读者可能会问：我们是不是离题了？既然量子色动力学中的胶子是无质量的，而夸克虽然有质量，但其质量是不可约化的。那么，量子色动力学与质量起源这一主题又能有什么关系呢？应该说，这是一个很合理的疑问。但量子色动力学的奇妙之处就在于，它形式上异常简洁，内涵却惊人地丰富。它宛如一坛绝世的佳酿，越品就越是回味无穷。在谈论质量起源问题的时侯，人们往往把注意力放在包含希格斯机制的电弱统一理论上，因为希格斯机制在登场伊始就打出了质量产生机制的响亮广告。但事实上我们将会看到，看似与质量起源问题无关的量子色动力学对这一问题有着非常独特而精彩的回答，从某种意义上讲，这一回答才是标准模型范围内的最佳回答。……     

fficient Scheme for Implementing a Fredkin Gate via Resonant Interaction with Two-Mode Cavity Quantum Electrodynamics

A scheme for implementing a Fredkin gate with an atom sent through a microwave cavity is proposed. The scheme is based on the resonant atom-cavity interaction so that the gating time is sharply short, which is important in view of decoherence.     

周期性Hubbard模型密度矩阵函数的研究

在晶格密度泛函理论(LDFT)的框架内研究了哈巴德(Hubbard)模型,当考虑晶格内位置的单粒子密度矩阵γij、自旋S时,这个模型的相互作用能w[γij,S]为密度矩阵γij、总自旋S的函数.且当所有最近邻的γij=γ12时,对环状系统的w[γij,S]可获得精确的数值计算结果;文中同时还讨论了w[γij,S]函数在弱电子关联(γ102)和强电子关联(γi∞j)以及在γ1∞2<γ12<γ012区域限制下的性质.以非关联能w0[γ0ij,S]为单位标度的w[γij,S]表明的赝普适行为与g12=(γ12-γ1∞2)/(γ012-γ1∞2)函数一样.另外,w[γij,S]函数对不同总自旋S有一定的依赖.     

顶色辅助的人工色模型下顶夸克极化效应的研究

在顶色辅助的人工色(TC2)理论下, 在强子对撞机上研究了顶夸克-反顶夸克对的产生过程中顶夸克的极化效应, 在计算过程中, 运用了MRS set A'部分子分布函数和螺旋度投影算符的方法. 研究结果表明: 在Tevatron上顶夸克的极化效应太小不可探测; 参数选取得当, 该效应在LHC上可以探测到, 其值可达16%. 因此, 顶夸克的极化效应提供了一种切实可行的检验顶色辅助的人工色模型的方法.