Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GalnNAs/GaAs Single Quantum Well Laser Diode

Temperature stability of the threshold current and the lasing wavelength is investigated in a 1.3-μm GaInNAs/ GaAs single quantum-well laser. The measured characteristic-temperature was 88 K. The small wavelength shift per change in temperature of 0.35 nm/°C was obtained, indicating the superior lasing-wavelength stability. Therefore, it is shown experimentally that GaInNAs is very promising material for the fabrication of light source with excellent high-temperature performance for optical fiber communications.     

Correct Evaluation of the Effect of Transverse Effective Charges on Phonons in AlAs Quantum Dots

An improved valence force field model (VFFM) is suggested to calculate the phonon modes in both bulk specimens and quantum dots (QDs) of AlAs taking account of the effect of transverse effective charges (TCs) correctly.The resultant dispersions of AlAs bulk phonons are in accord better with the results carefully fitted to the experimental data by using 11-parameters rigid-ion model, than those got by ordinary VFFM, especially in the region of near F point. For AlAs QDs, TCs are evaluated bond by bond for each phonon mode of QD and its effect on the change of the force on atoms is taken into account to modify further the phonon spectrum. The frequency spectra and densities of phonon states of different irreducible representations calculated by using improved VFFM are compared with the results of ordinary VFFM. The correct evaluation of the TCs is not only important in calculating the phonon spectrum of both bulk and QD specimens accurately, but is also in the further discussion of the electron-phonon (e-ph) interaction, which can be directly related to TCs of ions in QD.     

基于单端半导体光放大器的可调谐超短光脉冲源理论与实验研究

超短光脉冲源是光时分复用(OTDM)系统中的关键器件.提出了一种基于单端半导体光放大器(SOA)的注入型主动锁模光纤激光器产生超短光脉冲的方案，建立了该方案的理论模型.实验实现了高消光比稳定的重复频率10—40GHz皮秒级光脉冲的输出，输出波长在30nm范围内连续可调. 关键词： 超短光脉冲 单端半导体光放大器 主动锁模     

Memory switching of germanium tellurium amorphous semiconductor

The dc conductivity and switching properties of amorphous GeTe thin film of thickness 262 nm are investigated in the temperature range 303-373 K. The activation energy ΔE_σ, the room temperature electrical conductivity σ_RT and the pre-exponential factor σ₀ were measured and validated for the tested sample. The conduction activation energy ΔE_σ is calculated. The I-V characteristic curves of the thin film samples showing a memory switching at the turnover point (TOP) from high resistance state (OFF state) to the negative differential resistance state (NDRS) (ON state). It is found that the mean values of the threshold electrical field E_th decreased exponentially with increasing temperatures in the investigated range. The switching activation energy ΔE_th is calculated. Measurements of the dissipated threshold power P_th and the threshold resistance R_th were carried out at TOP point at different temperatures of the samples. The activation energies ΔE_R and ΔE_P caused by resistance and power respectively are deduced. The results obtained support thermal model for initiating switching process in this system.     

光纤环形外腔半导体激光器频偏特性研究

本文给出了在环形光纤外腔光反馈之下半导体激光器频偏特性的小信号分析理论.分析表明,尤其在千兆赫以下的调制频段中,耦合腔相移、内外腔光耦合强度及内外腔光场相位失谐对频偏功率比均有显著影响.可望用作强度调制直接检测高速率、长距离光纤通信系统中的光源.     

聚合物电致发光材料研究进展

本文较详细地综述了聚合物电致发光材料的研究进展，重点介绍了聚对苯撑乙烯（ＰＰＶ），并提出了有关聚合物电致发光材料及器件构造研究的一些观点。     

一种自制的蒸馏水器保护装置

本装置由检测、控制、执行、报警和电源五部分组成。检测部分采用了靠正常水位导通的两根信号线。当蒸馏水器在正常运行时遇停水,本装置可立即实现断电保护,同时发出声光报警,有效防止干烧,杜绝事故发生。本装置制作简便,元器件均为市售,成本低廉,性能可靠。     

自旋交叉配合现象与分子电子器件

自旋交叉配合物在热、压力或光诱导自旋交叉现象的同时会伴随着其它一些协同效应，比如配合物颜色的改革、存在着大的热滞后效应等，这些协同效应是单个分子或分子集合体作为热开关、光开关和信息存储元件材料的基础。因此，自旋交叉配合物是开发新型的热开关、光开关和信息存储元件材料的理想分子体系。本文概述了自旋交叉现象的研究历史、现状和未来的发展趋势。讨论了影响配合物自旋交叉性质的各种内在的和外部的因素，总结了目前用于研究自旋交叉现象的各种现代测试技术。最后，展望了自旋交叉配合物在分子电子器件方面的应用前景。     

Comparison of procedures for correction of matrix interferences in the multi-element analysis of soils by ICP-AES with a CCD detection system

Three procedures, matrix matching, plasma optimisation and single-point standard-addition, have been evaluated to ascertain the best procedure for simultaneous multi-element analysis of industrial soils by ICP-AES with CCD detection. A standard reference material, CRM143 from the Bureau Communautaire de Réference (BCR), has been analysed for Cd, Cr, Cu, Mn, Ni and Pb using the three different matrix interference correction procedures. All three procedures give comparable results which are in good agreement with the BCR values, except for Cr. The single-point standard addition procedure was chosen, on the basis of economy and ease of implementation, to correct for matrix interferences in the determination of Cd, Co, Cr, Cu, Mn, Mo, Ni, Pb, Sn and V in soil samples collected from an industrial site in England. Concentrations of some of the elements were found to vary greatly with sampling depth. For example, the concentration of Mn, determined using the atomic line at 279.920 nm, increased from 426 ± 3 g/g at a depth of 18–28 cm to 5996 ± 144 g/g at 60–85 cm.     

n型砷化镓微区光电化学腐蚀过程

在n-GaAs电解液界面,用聚焦He-Ne激光照射, 使n-GaAs表面发生微区光电化学腐蚀, 用计算机控制步进马达, 使试样在X-Y二维方向扫描移动, 能在晶片上得到刻蚀点直径2 μm的刻蚀图案. 研究了激光相对光强, KOH、H_2SO_4、KCl等刻蚀剡的浓度, 光腐蚀的时间, 电极电位等因素对腐蚀点的直径和深度的影响, 通过实验数据找出腐蚀过程的规律, 并用光电化学原理进行解释.