ZnO∶Eu3^＋纳米晶的制备及发光性质研究

为了探讨稀土Eu^3＋与纳米ZnO基质之间的能量传递,利用溶胶-凝胶法（Sol-Gel）制备了ZnO∶Eu^3＋纳米晶,测量了样品的X射线衍射谱（XRD）、光致发光谱（PL）和激发谱（PLE）。X射线衍射结果表明,ZnO∶Eu^3＋具有六角纤锌矿晶体结构。观察到稀土Eu^3＋强而窄的特征发射和ZnO基质弱而宽的可见发射。分析了稀土Eu^3＋激发态5^D0→7^F1,5^D0→7^F3和5^D0→7^F2特征发射机制。给出了Eu^3＋离子特征发射的峰值强度随掺Eu^3＋浓度增加而增强的变化关系,证实了纳米ZnO基质与稀土Eu^3＋离子之间存在能量传递。比较了Eu^3＋离子5^D0→7^F1磁偶极跃迁（MD）与5^D0→7^F2电偶极跃迁（ED）的相对强度,证实了在ZnO纳米晶基质中大多数Eu^3＋占据了对称性较低的格位。     

Quantum Tricritical Point in the Spin-Boson Model with an Ohmic Bath

The dynamics of the spin-boson model with an Ohmic bath at finite temperature is studied by a variational calculation. Numerical solution of the self-consistent equation derived from the variational method shows that the transition from incoherent to coherent phases is discontinuous. It indicates that （T = 0, s = 1） is a tricritical point, i.e. the transition changes from continuous to discontinuous by tuning from T = 0 to T≠ 0. The discontinuous transition at finite temperature is analysed by Landau theory and the relation to the experimental observation on the coherent state is also discussed.     

Effects of Inhomogeneous Spin Coupling and Anisotropy on Thermal Entanglement

We study the thermal entanglement properties of a simple system that includes three spins inhomogeneously coupled between them with additional anisotropy in their couplings. The main result is the systematic analysis of the concurrence evolution as functions of inhomogeneity, anisotropy and temperature. By adjusting proportional factor of the interaction J and anisotropy parameter △, the comparison between concurrences C₁₂ andC₁₃ is also presented.     

Dynamics of Efficiency Change by Temperature in Diode Pumped Nd：YAG Heat Capacity Laser

We investigate the influence of temperature on the efficiency of diode pumped Nd：YAG heat capacity laser is studied. It is shown that the efficiency of such a laser system is greatly reduced at higher temperature. This bad behaviour is mainly caused by the doped-ion redistribution among various Stark levels of the ground state, and by a thermal equilibrium between the upper laser level and the pump level. Meanwhile, the thermal excitations from the ground state to the lower laser level also play a role. We derive a model to describe those effects, with the considerations of emission spectrum of laser diodes, the subtle Stark structures and the linewidth of absorption and of simulated-emission.     

Effect of Temperature on the Void Growth in Pure Aluminium at High Strain-Rate Loading

With the environment temperature varying from 273 K to 773 K, the dynamic process of void growth in pure aluminium at high strain-rate loading is calculated based on the dynamic growth equation of a void with internal pressure. The result shows that the effect of temperature on the growth of void should be emphasized. Because the initial pressure of void with gas will increase and the viscosity of materials will decrease with the rising of temperature, the growth of void is accelerated. Furthermore, material inertia restrains the growth of void evidently when the diameter exceeds 10 μm. The effect of surface tension is very weak in the whole process of void growth.     

Measuring Grüneisen Parameter of Lead by High Pressure-Jump Method

Using the technology of pressure jump, variations of temperature associated with pressure from 2.4 GPa to 4.6 GPa are measured for lead. The Grfuneisen parameter is calculated from the thermodynamic relation γ =（Ks/T）（aT/aP）s, in which substitution of △T/△P for aT/aP at median pressure is strictly justified. The correction of temperature change is carried out by analysing the experimental data, which makes the process more approaching to an adiabatic condition. The calculated values of △T/ △ P and γ gradually decrease with the increasing pressure. The decrease trend is consistent with the previous work. The γ values in the range of 2-3 GPa are averagely higher than the results of Ramakrishnan et al., indicating the effect of temperature correction. The improved method is promising for measurements of Grfineisen parameter to higher pressure range.     

Resonance Energies,Absorption Oscillator Strengths and Ionization Potentials for the Element Hassium （Z = 108）

On the basis of successfully predicting low-lying energy levels for the element fermium （Z = 100）, we calculate the resonance energies, absorption oscillator strengths and the first ionization potential of the element hassium （Z = 108） by taking important relativistic and improved electron correlation effects into account using the multiconfiguration Dirac Fock method. These calculations are carried out with the aim of assisting experimental investigations of hassium.     

Room-Temperature Ferromagnetism of Co-Doped CeO2 Thin Films on Si（111） substrates

Using Co2O3 as the Co source, doped cerium oxide thin films with the composition of Ce0.97C00.03O2-δ （CCO） are deposited on Si（111） and glass substrates by pulse laser deposition technique. X-ray diffraction reveals that CCO films with （111） preferential orientation are grown on Si, while the fihn on glass is polycrystalline with nanocrystal. X-ray photoelectron spectroscopy shows that the （Jo displaces the （;e atom and exists in high spin state rather than low spin state, which contributes to the room-temperature ferromagnetism confirmed by vibration sample magnetometer. I~ilms on Si and glass are different in ferromagnetism, which is believed to be induced by different film microstructures. Based on these results, the possible ferromagnetism in this insulating film is discussed. Anyway, successful fabrication of CCO films with room-temperature ferromagnetism on Si substrates is of great importance in both technological and theoretical aspects.     

Electron Transport in Ga-Rich InxGa1-xN Alloys

Resistivity and Hall effect measurements on n-type undoped Ga-rich InxGa1-xN （0.06 ≤ x ≤ 0.135） alloys grown by metal-organic vapour phase epitaxy （MOVPE） technique are carried out as a function of temperature （15-350 K）. Within the experimental error, the electron concentration in Inx Ga1-x N alloys is independent of temperature while the resistivity decreases as the temperature increases. Therefore, Inx Ga1-xN （0.06 ≤ x ≤0.135） alloys are considered in the metallic phase near the Mort transition. It has been shown that the temperaturedependent metallic conductivity can be well explained by the Mort model that takes into account electron-electron interactions and weak localization effects.