Entanglement reciprocation between two charge qubits and two-cavity field

We propose a simple scheme to generate two-mode entangled coherent state in two separated cavities and realize the entanglement reciprocation between the superconducting charge qubits and continuous-variable system. By measuring the state of charge qubits, we find that the entanglement of two charge qubits, which are initially prepared in the maximally entangled state, can be transferred to the two-cavity field, and at this time the two-cavity field is in the entangled coherent state. We also find that the entanglement can be retrieved back to the two charge qubits after measuring the state of the two-cavity field.      

Design of a new thin-film electro-optic switch

A new thin-film electro-optic switch employing two stable states of polarization is proposed and investigated. The design can be further employed to realize a TE-TM polarization converter by constructing a Mach-Zehnder type interferometer integrated optical switch. The limitations and design procedures for electro-optic devices are also discussed.     

Resonance phenomena in the magnetized semiconductor plasma and their application for the design of the millimeter and submillimeter wave components

A review of physical principles of design as well as some ways of technical realization of controlled resonance semiconductor devices at millimeter and submillimeter wavelengths is presented. The operation of such devices is based on cyclotron and magnetoplasma resonances as well as on Fabry-Perot resonance. Such choice has been made due to the fact that these resonance phenomena are the most typical ones for the magnetized semiconductor plasma.     

Dynamic chemical devices: modulation of photophysical properties by reversible, ion-triggered, and proton-fuelled nanomechanical shape-flipping molecular motions

The terpy-derived (terpy=terpyridine) ligand 1 has an extended W shape in which the two appended photoactive pyrenyl groups are held apart. On binding of a zinc(II) ion with a terpy group, ligand 1 is converted into complex 2 whereby it adopts a U shape, thus stacking the aromatic units. This structural modification leads to a very pronounced change in photophysical properties: from a highly fluorescent free ligand to a very weakly emitting complex. The W/U structural switching can be reversibly induced by the addition of a competitive tren ligand, which binds and releases a zinc(II) ion under protonation/deprotonation cycles, thus leading to oscillations in light emission. Therefore, the present system performs periodic modulation of optical output through a nanomechanical shape-flipping motion, triggered by metal ion binding and fuelled by acid-base neutralisation energy. Overall, it represents an ion-triggered opto-mechanical supramolecular device.     

突破间接带局限创新Si基激光器

Si基高效发光与受激光发射是Si基光子学突破性发展的关键课题,它的实现对Si基微电子学的发展有深远的重大意义．由于受到天然Si材料间接带能带结构的限制,Si材料的发光效率极低,更谈不上可实现受激光发射,人工改性就成为当代研究、开拓的主要途径．新的Si基直接带体材料(如β-FeSi2等)的探索,Ge／Si量子阱、超晶格、量子点的能带工程介观改性,子带发光跃迁的探索,异类元素插入短周期超晶格中的化学键改性,以及SiO2高浓度nc-Si的生成和高激活度稀土离子的掺入发光等已开展了多途径的研究,不同程度上取得了重要的进展,一种MIS结构电子隧道注入高效发光器件已在SiO2：RE MOS结构中实现．运用激光器件物理的深入设计和新的器件技术的引入,可以预计本世纪初叶,对实现Si基激光器的奢望将会成为现实,无疑它对Si基光子学、Si基集成光电子学乃至信息高科技的发展将作出历史性的巨大贡献．