Electrical switching properties of nanostructured multilayer superlattice Ge–Si…Cu…Si–Ge prepared by electron beam evaporation on glass

In this study, the fabrication of nanostructured multilayer superlattice Ge–Si…Cu…Si–Ge using electron beam evaporation on glass substrates at a temperature of 200 °C has been reported. The structural, optical and electrical characteristics of such films were then studied by means of DC polarization, powder X-ray diffraction (XRD), scanning electron microscopy, atomic force microscopy (AFM), Rutherford backscattering (RBS) and UV–visible spectroscopic techniques. The XRD pattern obtained showed an amorphous state along with some reflected XRD signals from the Ge planes while there were no reflected signals from the Si and Cu layers. The average estimated grain size diameter (_Dav.)$\left(D_{av.}\right)$ is 30.13 nm as found from the XRD experiment using the Debye–Scherrer equation. The grain size as estimated from the AFM images was found to be within 28–31 nm, which is in good agreement with the XRD average value. RBS analysis confirmed the multilayer structure of the superlattice. The optical allowed indirect band gap of the superlattice obtained from the Tauc plot was found to be 1.19 eV, which is greater than that of bulk Ge semiconductor (0.66 eV). This fact indicates that the incorporation of a Cu layer instead of the Ge layer enables us to change the indirect to direct transitions in Ge/Si devices. Current density–voltage (J$J$–V$V$) characteristics of the nanodevice showed an electrical switching effect (VCNR) with the largest ON/OFF current ratio of the order of 10 ⁶ at 15 V.     

Growth of Ni-Mn-Ga high-temperature shape memory alloy thin films by magnetron sputtering technique

Ni-Mn-Ga thin films have been fabricated by using magnetron sputtering technique under various substrate negative bias voltages. The effect of substrate negative bias voltage on the compositions and surface morphology of Ni-Mn-Ga thin films was systematically investigated by energy dispersive X-ray spectrum and atomic force microscopy, respectively. The results show that the Ni contents of the thin films increase with the increase of the substrate negative bias voltages, whereas the Mn contents and Ga contents decrease with the increase of substrate negative bias voltages. It was also found that the surface roughness and average particle size of the thin films remarkably decrease with the increase of substrate negative bias voltages. Based on the influence of bias voltages on film compositions, a Ni₅₆Mn₂₇Ga₁₇ thin film was obtained at the substrate negative bias voltage of 30 V. Further investigations indicate that the martensitic transformation start temperature of this film is up to 584 K, much higher than room temperature, and the film has a non-modulated tetragonal martensitic structure at room temperature. Transmission electron microscopy observations reveal that microstructure of the thin film exhibits an internally (1 1 1) type twinned substructure. The fabrication of Ni₅₆Mn₂₇Ga₁₇ high-temperature shape memory alloy thin film will contribute to the successful development of microactuators.     

Photoprogrammable Organic Light‐Emitting Diodes

Enlightening the memory : The integration of a crosslinkable photochromic dithienylperfluorocyclopentene (DTE) into organic light‐emitting diodes (OLED) allows for the individualization of the emissive area of the OLED device, for example, for signage applications. The operation principle is based on switching the injection barrier for holes (positive charge carriers). Very large ON/OFF ratios of up to 3000 for current as well as electroluminescence have been achieved.

     

Ionic liquids as desorption solvents and memory effect suppressors in heterocyclic aromatic amines determination by SPME–HPLC fluorescence

The beneficial effects of 1-butyl-3-methylimidazolium tetrafluoroborate (BMIm-BF₄) ionic liquid (IL) as mobile phase additive, desorption solvent, and memory effect suppressor in solid-phase microextraction (SPME)–high-performance liquid chromatography with fluorescence detection for the determination of six heterocyclic aromatic amines have been evaluated for the first time. Several chromatographic parameters have been evaluated in the presence or absence of IL or using triethylamine as the most common mobile phase additive, with a Nova-Pak® C18 stationary phase. This IL was found to be clearly superior to triethylamine for efficiency as well as peak shape enhancement and sensitivity increase. SPME was chosen because it is faster than conventional extraction techniques and allowed us to minimize the use of organic solvents. However, memory effect may become a problem when a high-sensitivity detector is used. The appropriate conditions for the desorption step and to eliminate the memory effect involving BMIm-BF₄ were established and optimized. The method was applied for the determination of these compounds in commercial meat extracts.     

我国股市收益的双长记忆性检验——基于VaR估计的ARFIMA-HYGARcH-skt模型

针对股市收益分布的"尖峰肥尾"特征,引入了偏t分布作为新息分布。基于VaR方法,从风险估计的角度,利用ARFIMA(2,d_1,0)-HYGARCH(1,d_2,1)-skt模型对1996年12月17日至2007年7月5日期间的沪深股市收益进行了实证分析.实证结果显示:沪深股市具有显著的双长记忆特征;上海股市的日收益率和波动率的长记忆性均比深圳股市强;ARFIMA(2,d_1,0)- HYGARCH(1,d_2,1)-skt模型对我国股市收益具有较强的风险估计和预测能力。     

Zn2+ release from zinc and zinc oxide particles in simulated uterine solution

Zn²⁺ release from Zn and ZnO particles with different sizes in simulated uterine solution were investigated by absorbance measurements. The effects of pH and human serum albumin (HSA) on Zn²⁺ release were also studied. The morphology of Zn and ZnO particles was observed by scanning electron microscopy, and the corrosion products of zinc nanoparticles were analyzed by XRD. The results indicate that the maximum release ratios of Zn²⁺ from Zn and ZnO nanoparticles are higher than those from Zn and ZnO microparticles. Zn²⁺ release ratio depends not only on the pH of the simulated uterine solution but also the presence of human serum albumin. It decreases as the pH of the uterine solution increases. The trends of Zn²⁺ release ratios are almost the opposite for solutions with and without HSA. XRD analysis results indicate that zinc oxide is the main corrosion product of zinc particles.     

Incommensurate modulated structure of the ferromagnetic shape-memory Ni2MnGa martensite

The ferromagnetic shape memory (MSM) alloy Ni₂MnGa undergoes a martensitic transformation (MT) at T=220 K on cooling. The structure of this phase is studied by powder X-ray diffraction experiment. The analysis of the experimental data combined with the huge information reported in literature allowed to conclude that the Ni₂MnGa martensite shows an incommensurate modulated structure closely related to a five-fold layered superstructure. The symmetry of the basic structure is found to be orthorhombic. The structure is refined by Rietveld method with superspace group Immm(00γ)s00 having a=4.2187(1) Å, b=5.5534(1) Å and c=4.1899(1) Å and modulation vector q=0.4248(3)c*. The results show that the modulation is mainly related to the periodic shuffling of the atomic layers perpendicular to the c-axis of the orthorhombic basic structure.     

Blowup and Asymptotic Behavior of a Free Boundary Problem with a Nonlinear Memory

In this paper, we investigate a reaction-diffusion equation $u_t-du_{xx}=au+\int_{0}^{t}u^p(x,\tau){\rm d}\tau+k(x)$ with double free boundaries. We study blowup phenomena in finite time and asymptotic behavior of time-global solutions. Our results show if $\int_{-h_0}^{h_0}k(x)\psi_1 {\rm d}x$ is large enough, then the blowup occurs. Meanwhile we also prove when $T^*<+\infty$, the solution must blow up in finite time. On the other hand, we prove that the solution decays at an exponential rate and the two free boundaries converge to a finite limit provided the initial datum is small sufficiently.     

基于两步法带宽选择的金融时间序列长记忆参数估计

金融时间序列长记忆参数的半参数估计方法以频域分析为主,带宽选择是其中必不可少的关键环节。不同的带宽可能给出差异明显的长记忆参数估计值,甚至产生矛盾的结论,进而影响时间序列平稳性的判断。本文提出一种两步法,用于金融时间序列长记忆估计的半参数方法的带宽选择,并进一步对长记忆参数进行估计:首先,为了克服半参数方法忽略短期结构的不足,通过信息准则判断ARFIMA(p,d,q)过程的短记忆结构;其次,用短记忆模型拟合差分后的序列,根据拟合效果确定选择带宽及长记忆参数估计值。数值模拟显示以长记忆参数估计值均方根误差最小为标准,两步法优于其他方法。经上证50指数已实现波动率日数据的实证检验,两步法在长记忆模型中的预测误差最小;与短记忆模型相比,两步法在中期提前预测步长上具有优势。