首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   3124篇
  免费   580篇
  国内免费   354篇
化学   1406篇
晶体学   69篇
力学   857篇
综合类   38篇
数学   274篇
物理学   1414篇
  2024年   4篇
  2023年   45篇
  2022年   88篇
  2021年   107篇
  2020年   156篇
  2019年   117篇
  2018年   103篇
  2017年   124篇
  2016年   168篇
  2015年   123篇
  2014年   147篇
  2013年   281篇
  2012年   162篇
  2011年   166篇
  2010年   133篇
  2009年   178篇
  2008年   180篇
  2007年   183篇
  2006年   173篇
  2005年   148篇
  2004年   164篇
  2003年   130篇
  2002年   119篇
  2001年   123篇
  2000年   108篇
  1999年   103篇
  1998年   85篇
  1997年   64篇
  1996年   57篇
  1995年   65篇
  1994年   40篇
  1993年   30篇
  1992年   28篇
  1991年   25篇
  1990年   26篇
  1989年   21篇
  1988年   20篇
  1987年   8篇
  1986年   11篇
  1985年   6篇
  1984年   7篇
  1983年   3篇
  1982年   12篇
  1981年   2篇
  1980年   4篇
  1979年   1篇
  1978年   1篇
  1977年   1篇
  1971年   4篇
  1957年   4篇
排序方式: 共有4058条查询结果,搜索用时 15 毫秒
11.
Films of amorphous polystyrene (PS) with a weight-average molecular weight (Mw) of 225 × 103 g/mol were bonded in a T-peel test geometry, and the fracture energy (G) of a PS/PS interface was measured at the ambient temperature as a function of the healing time (th) and healing temperature (Th). G was found to develop with (th)1/2 at Th = Tg-bulk − 33 °C (where Tg-bulk is the glass-transition temperature of the bulk sample), and log G was found to develop with 1/Th at Tg-bulk − 43 °C ≤ ThTg-bulk − 23 °C. The smallest measured value of G = 1.4 J/m2 was at least one order of magnitude larger than the work of adhesion required to reversibly separate the PS surfaces. These three observations indicated that the development of G at the PS/PS interface in the temperature range investigated (<Tg-bulk) was controlled by the diffusion of chain segments feasible above the glass-transition temperature of the interfacial layer, in agreement with our previous findings for fracture stress development at several polymer/polymer interfaces well below Tg-bulk. Close values of G = 8–9 J/m2 were measured for the symmetric interfaces of polydisperse PS [Mw = 225 × 103, weight-average molecular weight/number-average molecular weight (Mw/Mn) = 3] and monodisperse PS (Mw = 200 × 103, Mw/Mn = 1.04) after healing at Th = Tg-bulk − 33 °C for 24 h. This implies that the self-bonding of high-molecular-weight PS at such relatively low temperatures is not governed by polydispersity. © 2004 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 42: 1861–1867, 2004  相似文献   
12.
The effect of the triblock copolymer poly[styrene‐b‐(ethylene‐co‐butylene)‐b‐styrene] (SEBS) on the formation of the space charge of immiscible low‐density polyethylene (LDPE)/polystyrene (PS) blends was investigated. Blends of 70/30 (wt %) LDPE/PS were prepared through melt blending in an internal mixer at a blend temperature of 220 °C. The amount of charge that accumulated in the 70% LDPE/30% PS blends decreased when the SEBS content increased up to 10 wt %. For compatibilized and uncompatibilized blends, no significant change in the degree of crystallinity of LDPE in the blends was observed, and so the effect of crystallization on the space charge distribution could be excluded. Morphological observations showed that the addition of SEBS resulted in a domain size reduction of the dispersed PS phase and better interfacial adhesion between the LDPE and PS phases. The location of SEBS at a domain interface enabled charges to migrate from one phase to the other via the domain interface and, therefore, resulted in a significant decrease in the amount of space charge for the LDPE/PS blends with SEBS. © 2004 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 42: 2813–2820, 2004  相似文献   
13.
采用热重分析 (TGA)、傅立叶红外光分析 (FTIR)和磁头起飞降落 (CSS)等试验方法 ,研究了硬盘磁头 碟界面润滑层PFPE的失效机理以及添加剂X 1P在磁头 碟界面润滑剂中的作用 .研究结果表明 ,高温条件下磁头材料Al2 O3 会诱导磁头 碟界面润滑剂PFPE发生歧化降解 ,造成磁头 碟界面润滑层失效 ;添加剂X 1P因其特殊的分子结构和化学性能 ,可作为一种有效稳定剂添加到磁头 碟润滑剂PFPE中 ,减弱磁头材料Al2 O3 作为催化反应中心的催化反应活性 ,减缓磁头 碟界面润滑剂PFPE的高温歧化降解 ,改善磁头 碟界面的CSS性能  相似文献   
14.
15.
基于SUN5500小型计算机并行开发环境,给出了消息传递模型和蕴式行模型的实现方法,通过实例分析了SUNMPI实际编程,并对选取不同模型有不同参数的运算时间进行了比较,结果表明,在SUN5500计算机上MPI模型和蕴式并行模型均能较大地提高运算速度,而且MPI在灵活性和并行程度方面更优。  相似文献   
16.
利用MS-XANES计算研究了嵌入在SiO2介质中的InSb纳米颗粒的界面效应, 结果显示Sb K-XANES实验谱在白线峰强度增大和白线峰向高能一侧展宽这两个特点的起因是: 1. SiO2介质透过界面处强的Sb-O共价键间接地影响和改变了InSb团簇中Sb原子内部的势分布; 2. 通过InSb纳米颗粒界面处存在着强的Sb-O共价键使得Sb原子的5p电子被耗尽来提高InSb纳米颗粒Sb原子的5p的空穴数. 这两方面共同决定了InSb纳米颗粒的Sb K-XANES实验谱在白线峰 强度的增大. 此外, 由于纳米颗粒的界面效应, 仅仅把白线峰的强度增大归因于吸收原子电荷转移带来的空穴数增加, 并依此通过白线峰的强度计算吸收原子的空穴数是不合理的.  相似文献   
17.
Dendritic nanocrystalline CdS film was deposited at liquid-liquid interface of surfactants and an electrolyte containing 4 mmol L−1 cadmium chloride (CdCl2) and 16 mmol L−1 thioacetamide (CH3CSNH2) with an initial pH value of 5 at 15 °C by electrochemical synthesis. The nanofilm was characterized by transmission electron microscopy (TEM), field emission scanning electron microscope (FE-SEM), atomic force microscopy (AFM), ultraviolet visible (UV-vis) absorption spectroscopy and fluorescence spectroscopy. The surface morphology and particle size of the nanofilm were investigated by AFM, SEM and TEM, and the crystalline size was 30-50 nm. The thickness of the nanofilm calculated by optical absorption spectrum was 80 nm. The microstructure and composition of the nanofilm was investigated by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), showing its polycrystalline structure consisting of CdS and Cd. Optical properties of the nanofilm were investigated systematically by UV-vis absorption and fluorescence spectroscopy. A λonset blue shift compared with bulk CdS was observed in the absorption spectra. Fluorescence spectra of the nanofilm indicated that the CdS nanofilm emitted blue and green light. The nanocomposites film electrode will bring about anodic photocurrent during illumination, showing that the transfer of cavities produces photocurrent.  相似文献   
18.
对以本征Si及重掺杂p型和n型Si作为中间层的Fe/Si多层膜的层间耦合进行研究,并通过退火,增大Fe,Si之间的扩散,分析界面扩散对层间耦合的影响. 实验结果表明,层状结构良好的制备态的多层膜,Fe,Si之间也存在一定程度的扩散,它是影响层间耦合的 主要因素,远远超过了半导体意义上的重掺杂,使不同种类的Si作为中间层的层间耦合基本 一致.进一步还发现,在一定范围内增大Fe,Si之间的扩散,即使多层膜的层状结构已经有了相当的退化,Fe/Si多层膜的反铁磁耦合强度基本保持不变. 关键词: Fe/Si多层膜 层间耦合 界面扩散  相似文献   
19.
Gel polymer electrolyte (GPE) films comprising of poly(vinylidenefluoride), propylene carbonate, ethylene carbonate and zinc trifluoromethane sulfonate are prepared and characterized. The composition of GPE is optimized to contain minimum liquid components with a maximum specific conductivity of 3.94×10−3 S cm−1 at (25±1) °C. A detailed investigation on the properties such as ionic conductivity, transport number, electrochemical stability window, reversibility of Zn/Zn2+ couple and Zn/gel electrolyte interfacial stability have been carried out. The ionic conductivity follows a VTF behaviour with an activation energy of about 0.0014 eV. Cationic transport number varies from 0.51 at 25 °C to 0.18 at 70 °C. Several cells have been assembled with GPE as the electrolyte, zinc as the anode, γ-MnO2 as the cathode and their charge–discharge behaviour followed. Capacity values of 105, 82, 64 and 37 mAh/g of MnO2 have been achieved at 10, 50, 100 and 200 μA/cm2 discharge current densities, respectively. The discharge capacity values are almost constant for about 55 cycles for all values of current densities. Cyclic voltammetric study of MnO2 electrode in Zn/GPE/MnO2 cell clearly shows intercalation/deintercalation of Zn2+.  相似文献   
20.
The bias dependent interface charge is considered as the origin of the observed non-ideality in current–voltage and capacitance–voltage characteristics. Using the simplified model for the interface electronic structure based on defects interacting with the continuum of interface states, the microscopic origin of empirical parameters describing the bias dependent interface charge function is investigated. The results show that in non-ideal metal–semiconductor contacts the interface charge function depends on the interface disorder parameter, density of defects, barrier pinning parameter and the effective gap center. The theoretical predictions are tested against several sets of published experimental data on bias dependent ideality factor and excess capacitance in various metal–semicoductor systems.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号