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31.
The paper discusses the applicability of quasi-crystalline approximation to describing the thermal motion of water molecules in their normal and supercooled states. The problem is subjected to the critical analysis of experimental data on incoherent scattering of slow neutrons based on theories developed by Singwi-Sjolander [1] and Oskotsky [2] modified to duly take into account the limited applicability range of diffusion approximation. The applicability conditions of quasi-crystalline approximation are shown to be consistently satisfied only when water is in supercooled state and within a narrow temperature range above the melting temperature. 相似文献
32.
Daniel L. Feldheim Del R. Lawson Charles R. Martin 《Journal of Polymer Science.Polymer Physics》1993,31(8):953-957
We report a strong dependence of the thermal stability of Nafion® perfluorosulfonate ionomer on the nature of the counterion associated with the fixed sulfonate site. These results were obtained using thermal gravimetric analysis on a series of alkali metal and alkyl ammonium cation-exchanged Nafion films. We have found that the temperature of decomposition of Nafion is inversely dependent on the size of the exchanged cation; i.e., Nafion films show improved thermal stability as the size of the counter cation decreases. We attribute this inverse relationship of thermal stability with counterion size to an initial decomposition reaction which is strongly influenced by the strength of the sulfonate-coun-terion interaction. © 1993 John Wiley & Sons, Inc. 相似文献
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The dependence of the beam propagation factor (M
2 parameter) with the absorbed pump power in the case of monolithic microchip laser under face-cooled configuration is extensively
studied. Our investigations show that the M
2 parameter is related to the absorbed pump power through two parameters (α and β) whose values depend on the laser material properties and laser configuration. We have shown that one parameter arises due
to the oscillation of higher order modes in the microchip cavity and the other parameter accounts for the spherical aberration
associated with the thermal lens induced by the pump beam. Such dependency of M
2 parameter with the absorbed pump power is experimentally verified for a face-cooled monolithic microchip laser based on Nd3+ -doped GdVO4 crystal and the values of α and β parameters were estimated from the experimentally measured data points. 相似文献
36.
High index of refraction via quantum interference in a three-level system of Er^3+-doped yttrium aluminium garnet crystal 下载免费PDF全文
A simple three-level system is proposed to produce high index of refraction with zero absorption in an Er^3+-doped yttrium aluminium garnet (YAG) crystal, which is achieved for a probe field between the excited state 4I13/2 and ground state 4I15/2 by adjusting a strong coherent driving field between the upper excited state 4I11/2 and 4I15/2. It is found that the changes of the frequency of the coherent driving field and the concentration of Er^3+ ions in the YAG crystal can maximize the index of refraction accompanied by vanishing absorption. This result could be useful for the dispersion compensation in fibre communication, laser particle acceleration, high precision magnetometry and so on. 相似文献
37.
Mark Webber 《Mathematical Methods in the Applied Sciences》2006,29(7):819-838
We investigate the influence of slip boundary conditions on the onset of Bénard convection in an infinite fluid layer. It is shown that the critical Rayleigh number is a decreasing function of the slip length, and therefore boundary slip is seen to have a destabilizing effect. Chebyshev‐tau and compound matrix formulations for solving the eigenvalue problem are presented. Copyright © 2005 John Wiley & Sons, Ltd. 相似文献
38.
The quantum states are presented in these processions of fabricating poly-Si films. Amorphous silicon films prepared by PECVD has been crystallized by conventional furnace annealing (FA) and rapid thermal annealing (RTA), respectively. It is found that the thin films grain size present quantum states with the increasing of the gas flow ratios of SiH4, H2 mixture, substrate temperatures, frequency power, annealing temperature and time. 相似文献
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