二磺酸掺杂高热稳定性导电聚苯胺的合成及性能

以有机二磺酸作为掺杂剂合成了具有高热稳定性的二磺酸掺杂导电聚苯胺。研究了反应时间、温度、酸/苯胺摩尔比等因素对产率、产物的导电率与分子量的影响。利用微波加热的方法测试有机二磺酸掺杂聚苯胺的热稳定性能，结果表明：有机二磺酸掺杂的导电聚苯胺在微波场中升温速率快，并且具有良好的反复升温性能。     

Structure of Sol-Gel-Derived Sodium Dititanate Glass

The sodium dititanate, Na₂O·2TiO₂ glass was prepared by the sol-gel method. The structure of the glass, especially local environment of Ti⁴⁺ ions was examined using X-ray diffraction and X-ray absorption fine structure (XAFS) analyses, and was compared with that of the melt-derived glass with the same composition. It was found that Ti⁴⁺ ions are rather in five-fold coordination state, forming TiO₅ pyramids with one doubly bonded Ti=O in the gel-glass, while they were in lower coordination state or four-fold coordination in the melt-derived glass.     

钇对金属陶瓷力学性能和组织的影响

研究了添加钇对Ｔｉ（Ｃ，Ｎ）基金属瓷力学性能和组织的影响。结果表明，加入适量的钇能提高Ｔｉ（Ｃ，Ｎ）基金属陶瓷的抗变强度和硬度，其原因是由于钇与杂质硫起反应在化合物，净化了陶瓷相－金属相，陶瓷相－陶瓷相界面提高子界面结合强度     

Titanium‐implanted CaTiO3 films and their changes in Hanks' solution

Titanium‐implanted CaTiO₃ film was prepared and then characterized by x‐ray photoelectron spectroscopy (XPS) and Rutherford backscattering spectrometry (RBS) before and after immersion in Hanks' solution for 7 days. An as‐prepared specimen contained a small amount of Ar implanted during sputtering, although the pressure was as low as 10^?4 Torr. Even though Ar convolution increased with an increase in the relative Ti ion dose, most of the convoluted Ar was not from the Ar gas used for Ti ion production but rather was from the Ar gas used for sputtering the CaTiO₃. During Ti implantation, the CaTiO₃ films were ion‐etched by Ti ions. The composition of the CaTiO₃ film was not changed to any great degree by the Ti implantation, however its properties changed considerably. After immersion in Hanks' solution, the thickness of the specimen not implanted with Ti decreased the most whereas the [Ca]/[P] ratio, which was nearly unity before exposure, decreased significantly, becoming 0.23 on the Ti‐implanted specimen prepared at 200 W and 0.13 on the Ti‐implanted specimen prepared at 50 W. It was also observed by XPS that the ratio [Ca]/[P] was ～1.9 for all Ti‐implanted specimens after immersion in Hanks' solution for 7 days. Judging from the binding energies of Ca 2p_3/2 and P 2p electrons and the [Ca]/[P] ratio, it was suggested that a hydroxyapatite‐like substance had formed on the surfaces of the Ti‐implanted specimens after immersion in Hanks' solution. Copyright © 2003 John Wiley & Sons, Ltd.     

Structural and Optical Properties of Sol-Gel Derived Aluminosilicate Planar Waveguides Doped with Er3+ Ions

Er3+ doped-aluminosilicate thin films were prepared on silica and silica/Si substrates by the sol-gel process and dip-coating. The sol-gel aluminosilicate planar waveguides were prepared from silicon and aluminium alkoxides. Their structural characterization has been carried out by Raman spectroscopy, Atomic Force and Scanning Electron Microscopies. The results indicated that these films present an amorphous structure until an annealing temperature of 900°C, while at temperatures higher than 1000°C, crystallization occurs. An estimate of microcrystallite sizes using Raman spectroscopy is given, which agrees with data from scanning electron microscopy. The optical properties have been investigated by Fluorescence spectroscopy in the visible region.     

手性液晶掺杂剂（S）—4‘—辛氧基—4—（2—酰氧基—丙氧基）联苯的合成

手性液晶掺杂剂（Ｓ）┐４┐辛氧基┐４┐（２┐酰氧基┐丙氧基）联苯的合成马汝建李培荣国斌＊（华东理工大学化学系上海２００２３７）关键词铁电液晶材料，手性液晶掺杂剂，合成，手征性１９９７－０２－０３收稿，１９９７－０８－０７修回铁电液晶显示器所用的材料...     

N-TiO2/ZnO复合纳米管阵列的掺杂机理及其光催化活性

以ZnO纳米柱阵列为模板, 采用溶胶-凝胶法制备出TiO2/ZnO和N掺杂TiO2/ZnO的复合纳米管阵列. 扫描电镜(SEM)、X射线光电子能谱(XPS)和紫外-可见漫反射吸收光谱(UV-Vis)的结果表明: 两种阵列的纳米管均为六角形结构, 直径约为100 nm, 壁厚约为20 nm; 在N-TiO2/ZnO复合纳米管阵列中, 掺入的N离子主要是以N-Ox、N-C和N-N的形式化学吸附在纳米管表面, 仅有少量的N离子以取代式掺杂的方式占据TiO2晶格O的位置; 表面N物种形成的表面态能级和取代式掺杂导致带隙的窄化, 增强了纳米管阵列的光吸收效率, 促进了光生载流子的分离. 光催化实验结果表明, N离子的掺杂有利于N-TiO2/ZnO复合纳米管阵列光催化活性的提高.     

Pt掺杂对Mo-Ru-Se簇合物电催化氧还原性能的影响

直接甲醇燃料电池(DMFC)是理想的移动电源,但因金属Pt阴极催化剂的选择性较差,甲醇在阴极产生“混合电位”,导致电池效率降低。抗甲醇氧电还原催化剂可降低“混合电位”,是解决该问题的有效的方法。     

Preparation and lithium doping of gallium oxynitride by ammonia nitridation via a citrate precursor route

Gallium oxynitride, isostructural to hexagonal gallium nitride (h-GaN), was obtained by ammonia nitridation of a precursor prepared from the addition of citric acid to an aqueous solution of gallium nitrate. Gallium oxynitride produced at 750 °C had a small amount of gallium vacancies, and was formulated as (Ga_0.89□_0.11) (N_0.66O_0.34) where the symbol □ stands for gallium vacancy. Both the gallium vacancies and oxygen substituted for nitrogen were randomly distributed within the structure. The amount of vacancies decreased with nitridation temperatures in the range of 750-850 °C. Approximately, 10 at% Li⁺ was doped into the gallium oxynitride, using a similar preparation with the additional presence of lithium nitrate, resulted in the random substitution of Ga³⁺ in an atomic ratio of Li/Ga<1 at 750 °C. Oxygen was codoped with lithium and substituted nitrogen in the wurtzite-type crystal lattice. These substitutions reduced the electrical conductivity in the gallium oxynitride semiconductor. A new oxynitride, Li₂Ga₃NO₄, was also obtained with Li₂CN₂ impurity using similar preparations from a mixture of Li/Ga?1. The crystal structure was isostructural with h-GaN, and was refined as P6₃mc with a=0.31674(1) nm, and c=0.50854(2) nm. The Ga and Li occupancies at the 2b site were refined to be 0.6085 and 0.3915, respectively, assuming that the other 2b site was randomly occupied with 1/5O and 4/5N. When the new compound was washed for over 1 min for the removal of Li₂CN₂ impurities, it was decomposed to a mixture of α-GaOOH and α-LiGaO₂. The as-prepared product with Li/Ga=1 showed the highest intensity in yellow luminescence among the products under excitation at 254 nm.     

Influence of the cathodic polarization on the stability of Ti surface in concentrated KOH solutions

The stability of spontaneous thin layers and thin layers formed upon cathodical polarization of Ti in KOH solutions have been studied by potentiostatic and ellipsometric methods. At open circuit potential (OCP) the strongly adherent films, whose thickness depends on the concentration of the KOH solution, were formed. During the cathodic polarization the transformation of these films to weakly adsorbed precipitated layers on the electrode surface was observed. Comparing the theoretically computed curves with the experimental Ψ vs Δ loci measured ellipsometrically, the complex indices of refraction and the thickness of the generated films, from 3.6 to 60 nm in 1 M KOH and from 36 to 105 nm in 5 M KOH (adherent to the electrode surface), were determined. At OCP the rate of film growth increases with increasing the concentration of KOH solution. Cathodic polarizations change the chemical composition and retard the rate of film growth. Based on the ellipsometric and electrochemical data the chemical compositions of the formed films consisted of TiO₂, Ti₂O₃, TiO₂·H₂O, Ti(OH)₃ and TiOOH·nH₂O.