微电极研究 III: Hg^2^+的电沉积过程的研究

研究了不同浓度的Hg^2^+在碳纤维微电极电沉积Hg的形态, 沉积机制和实验参数对汞膜性质及溶出电流的影响; 剖析了Hg的成核过程, 验证了成核理论; 借扫描电镜观察了汞晶体图象。约在6×10^-^5mol·L^-^1Hg^2^+时镀汞, 可形成密布型微汞滴构成的类汞膜, 微滴直径在0.03-0.2μm, 汞微滴密度约为5.7×10^6个/cm^2, 提出了优化汞膜的实验条件和依据。     

MISCIBILITY AND MORPHOLOGY OF THIN FILMS OF BLENDS OF POLYSTYRENE WITH BROMINATED POLYSTYRENES： EFFECTS OF VARYING THE MOLECULAR WEIGHT, BROMINATION DEGREE AND ANNEALING

Thin films of incompatible polymer blends can form a variety of structures during preparation and subsequent annealing process. For the polymer blend system consisting of polystyrene and poIy(styrene-co-p-bromo-styrene), i.e., PS/PBrxS, its compatibility could be adjusted by varying the degree of bromination and the molecular weight of both components comprised, in this paper, surface chemical compositions of the cast and the annealing films were investigated by X-ray photoelectron spectroscopy (XPS) and contact angle measurement; meanwhile, surface topographical changes are followed by atomic force microscopy (AFM). In addition, substantial attention was paid to the effect of annealing on the morphologic variations induced by phase separation and/or dewetting of the thin film. Moreover, the influences of the molecular weight, Aw, as well as the brominated degree, x%, on the sample surface are explored systematically, and the corresponding observations are explained in virtue of the Flory-Huggins theory, along with the dewetting of the polymer thin film.     

肌红蛋白在聚天青A薄膜修饰电极上电极过程的研究

本文采用电聚合方法成功地制备了聚天青A(AZA)薄膜修饰电极。利用现场光透薄层光谱电化学方法研究了肌红蛋白于聚AZA薄膜修饰铂网光透电极上的准可逆异相电子传递过程, 给出了电极反应的热力学参数。X光电子能谱表面分析表明肌红蛋白于修饰电极表面存在吸附。用现场循环电位吸收和循环伏安法解析了肌红蛋白于膜电极上的伏安响应, 提出了肌红蛋白于聚AZA薄膜修饰电极上的异相电子传递过程机理。     

Preparation of supramolecular assembled films of fullerene C60 on the aqueous solution of water-soluble azocalixarene

A convenient procedure was developed to prepare an ultra-thin film of supermolecules of a spherical fullerene C₆₀ and water-soluble azocalix[6]arene. The C₆₀ molecule is so hydrophobic that it easily forms a three-dimensional aggregate on the water surface. When C₆₀ molecules were spread on an aqueous solution of water-soluble azocalixarene that acts as a host for C₆₀, the hydrophobic C₆₀ was captured in the cavity of the host molecule at the boundary of two phases and formed amphiphilic supermolecules. The supermolecules assembled spontaneously into ultra-thin films over 1-cm wide. The monolayer-like film could be transferred onto a solid support by the Langmuir–Blodgett technique or the inverse Langmuir–Schaefer technique. The morphology and the transferability of the supramolecular assembled films were examined by changing the host molecules, the initial density of C₆₀ on the water surface, the subphase temperature and the metal ions in the subphase.     

Evolution of Thin-wall Configurations ofTexture Matter

We consider the matter of global textures withinthe frameworks of a perfect fluid model in generalrelativity. We examine thermodynamical properties oftexture matter in comparison with radiation fluid and bubble matter. Then we study dynamics ofthin-wall selfgravitating texture objects, and show thatclassical motion can be elliptical (finite), parabolicalor hyperbolical. It is shown that total gravitational mass of neutral textures in equilibrium equalszero, as was expected. Finally, we carry out theWheeler-DeWitt minisuperspace quantization of thetheory, obtain exact wave functions and discrete spectra of bound states with provision for spatialtopology.     

铅锑合金在硫酸溶液中的阳极膜I.早期阳极膜生长动力学

本文用线性电位扫描法(20mV.s-1),自I.2V(vs.Hg/Hg2SO4)扫描至-1.2V,研究了三种铅锑合金在3.5MH2SO4溶液中(30℃),经一定时间(60,600,1200,)和240Os)1.2V阳极极化形成的阳极膜,该阳极膜的主要成分可能是PbO.PbSO4,其表面为PbO2.本文摊导出与实验一致的此种阳极膜的生长学方程式,并利用该式测得氧原子在阳极膜中的扩散系数。     

溶出伏安法中玻碳镀汞电极表面的汞膜状态

本文对不同条件下形成的汞D$的形成过程丶汞膜形态与其形成条件的关系以及对溶出峰的影响.结果表明: 玻碳表面的汞膜是由视直径小于10μm, 的微汞滴构成, 其分布密度随镀汞电位的负值增加而增加;微汞滴在电析过程中不断长大并相聚成更大一些的微汞滴, 在旋转玻碳电极上, 汞膜的最大平均厚度大会超过5μm, 而适用于溶溶出分析的范围为0.05~1μm, 比文献记载的范围(0.001~10-5M时虽经长时间镀汞用的Hg2+ 浓度的适用范围为1X10-5 ~2x10-4 m; Hg 2+浓度为2X10-ⅴM 时虽经长时间镀汞亦不易产生较大的微汞滴. 实验还表明峰高的重现性与电极表面载汞量有关. 还观察到较大的微汞滴在电极表面滑动以致被甩离电极表面的现象, 严重时会引起峰的下降.     

陶瓷基钯银合金膜制备技术及性能研究

报道采用浆料涂敷与化学镀相结合法在陶瓷支撑上沉积钯银合金膜,采用浆料涂敷法,将含钯银的浆料涂敷在支撑体上,干燥后热分解,使支撑体表面沉积部分钯银。然后,采用化学镀在50℃下沉积钯银膜,热处理后,得到表面较光洁、厚度约为3μm、银含量为23%(原子百分含量)、合金化较完全的钯银合金膜,该膜在压差为0.1MPa,温度为300℃时的渗氢通量达45cm^3(STP)/(cm^2·min),分离因子达500,研究了钯银合金膜中银含量随热处理温度的变化规律,由实验结果发现,银逐渐向表面扩散,并在一定的温度条件达到基本平衡。     

锑对在硫酸溶液中形成的阳极Pb(Ⅱ)氧化物膜的半导体性质的影响Ⅲ. 交流阻抗法研究阳极Sb~2O~3膜

应用交流阻抗方法研究锑在0.005mol.dm^-^3SO~4+0.5mol.dm^-^3Na~2So~4溶液(30℃)中以0.9V(vs.Hg/Hg~2SO~4/0.005mol.dm^3SO~4)生长3h的阳极Sb~2O~3膜的半导体性质.从Mott-schottky曲线可知.此膜 为n型半导体.平带电位为-0.34v(vs.Hg/Hg~2SO~4/0.005mol.dm^-^3SO~4).施主密度为4.0×19^1^9cm^-^3.讨论了锑增加铅锑合金极PbⅡ氧化物膜施主密度的原因.     

电位溶出分析法理论公式的改进处理方法

电位溶出分析法理论研究,国内已有文献报道,文献的理论结论与实验结果吻合,但理论公式的处理尚不十分完善。本文在前人工作基础上,提出电位溶出分析法理论公式的改进处理方法,以期进一步论证该理论的严谨性。设溶出过程中金属M在汞膜中服从Fick’s第二扩散定律,并提出如下初始、边界条件: