Synthesis,structural, optical,and magnetic properties of Co doped,Sm doped and Co+Sm co-doped ZnS nanoparticles

The compositional, structural, optical and magnetic properties of ZnS, Zn_0.98Co_0.02S, Zn_0.98Sm_0.02S and Zn_0.96Co_0.02Sm_0.02S nanoparticles synthesized by a hydrothermal method are presented and discussed. X-ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED) studies revealed that all the samples exhibited cubic structure without any impurity phases. X-ray photoelectron spectroscopy (XPS) results revealed that the Co and Sm ions existed in +2 and +3 states in these samples. The photoluminescence (PL) spectra of all the samples exhibited a broad emission in the visible region. The room temperature magnetization versus applied magnetic field (M–H) curves demonstrated that the Sm+Co doped nanoparticles exhibited enhanced ferromagnetic behavior compare to Co and Sm individually doped ZnS nanoparticles, which is probably due to the exchange interaction between conductive electrons with local spin polarized electrons on the Co²⁺ or Sm³⁺ ions. This study intensifies the understanding of the novel performances of co-doped ZnS nanoparticles and also provides possibilities to fabricate future spintronic devices.     

基于静电纺丝工艺的LED远程荧光片制备技术

首次提出了一种基于静电纺丝工艺以柔性PET为基底的新型LED远程荧光片的制备方法,实现了蓝色LED芯片与荧光粉层相分离的免封装器件结构。采用静电纺丝工艺制备了黄色荧光片和红色荧光片,并研究了黄色荧光片的透射率、吸收率、PL谱及红色荧光片对白光LED的光学性能参数的影响,包括光通量、相关色温、光效。实验结果表明,所制备黄色荧光片在可见光波段具有良好的透光性,荧光片的光谱完全由荧光粉来决定,不需要考虑复杂工艺的影响;使用红色荧光片可以在保持高光效的同时将球泡灯的相关色温由5 595 K降低为3 214 K,这在曲面发光及色温调节方面为灯具设计提供了广阔的空间。     

Photophysical insights on quantum dots-zinc porphyrazine system studied in solution

The present study reports spontaneous interaction of a quantum dots, namely, CdS_xSe_1-x/ZnS (QD) with zinc porphyrazine (1) in toluene. It is observed from steady state fluorescence measurements that photoluminescence of QD suffers quenching by 1. Time resolved fluorescence measurements reveal small change in the lifetime of QD (16.10 ns) following it interaction with 1 (15.77 ns). The magnitude of k_q for QD-1 system, i.e., k_q ​= ​5.25 ​× ​10¹² ​L⋅mol⁻¹⋅sec⁻¹ (evaluated from the stern-volmer plot) establishes that photoexcited QD undergoes decay by 1 according to static quenching mechanism. The results emerging from above study confirm that QD-1 system may be judiciously applied as an energy storage material in near future.     

Reusable sensor based on functionalized carbon dots for the detection of silver nanoparticles in cosmetics via inner filter effect

We report a low cost selective analytical method based on inner filter effect (IFE) for citrate-silver nanoparticle (cit-AgNP) detection, in which fluorescent amine-derivatized carbon dots (a-CDs) act as the donor and aggregated cit-AgNPs as the energy receptor. Carbon dots (CDs) were chemically modified with ethylenediamine (EDA) moieties via amidic linkage displaying an emission band at 440 nm. The presence of cit-AgNPs produces a remarkably quenching of a-CD fluorescence via IFE, since the free amine groups at CD surface induce the aggregation of cit-AgNPs accompany by a red-shifting of their characteristic plasmon absorption wavelength, which resulted in “turn-on” of the IFE-decreased in CD fluorescence. The proposed method, which involves the use of chelating agents for removal of metal ions interferences, exhibits a good linear correlation for detection of cit-AgNPs from 1.23 × 10⁻⁵ to 6.19 × 10⁻⁵ mol L⁻¹, with limits of detection (LOD) and quantification (LOQ) of 5.17 × 10⁻⁶ and 1.72 × 10⁻⁵ mol L^−1, respectively. This method demonstrates to be efficient and selective for the determination of cit-AgNPs in complex matrices such as cosmetic creams and reveals many advantages such as low cost, reusability, high sensitivity and non time-consuming compared with other traditional methods.     

Surface Modification of TiO2 Nanoparticles with Vitamin B12: Relationships between Vitamin B12 Content and Its Optical Properties

Anatase TiO₂ nanoparticles (NPs) with particle size of 10–20 nm were prepared via sol gel technique. The as‐synthesized NPs were immerged in vitamin B₁₂ (VB₁₂) solutions with different concentrations. The in‐ fluences of the solution concentration on photoluminescence and photocatalytic activity of the modified NPs were studied. Fourier transform infrared spectroscopy (FTIR) results demonstrated that TiO₂ NPs adsorb VB₁₂ molecules and that a new band is formed at ～2300 cm^?1. The VB₁₂ loading process led to dimin‐ ishing of the aggregation of NPs and formation of a fibre shape structure. The best photoactivity and PL effect among the modified samples was related to sample ‘d’. The optimum processing conditions to achieve this sample was found to be VB₁₂ concentration of 5 g/L.     

Optical and crystal improvements of semipolar (11-22) GaN/m-sapphire by in-situ thermal etching process

We investigated the optical and crystal qualities of semipolar (11-22) GaN grown on m-plane sapphire using three-step growth technique which consisted of seed GaN growth, in-situ thermal etching process (I-STEP), and lateral growth step. By introducing three-step growth, we achieved high optical and crystal qualities of semipolar (11-22) GaN films compared with those grown by conventional one-step growth. In particular, as the positions of I-STEP were decreased from 1.0 to 0.25 μm toward sapphire substrate, the full width at half maximum of the X-ray rocking curve was effectively decreased from 1083 to 828 arcsec, respectively. Furthermore, photoluminescence results showed that the bandedge emission intensity of semipolar (11-22) GaN with I-STEP was 56% higher than that with conventional growth technique. Based on these results, we suggested that the three-step growth would be effective to improve the crystal and optical qualities of semipolar (11-22) GaN/m-sapphire.     

Luminescence properties of ZnS：Cu, Eu semiconductor nanocrystals synthesized by a hydrothermal process

ZnS:Cu, Eu nanocrystals with an average diameter of ～ 80 nm are synthesized using a hydrothermal approach at 200 C. The photoluminescence (PL) properties of the ZnS:Cu, Eu nanocrystals before and after annealing, as well as the doping form of Eu, are studied. The as-synthesized samples are characterized by X-ray diffraction, scanning electron microscopy, inductively coupled plasma-atomic emission spectrometry, and the excitation and emission spectra (PL). The results show that both Cu and Eu are indeed incorporated into the ZnS matrix. Compared with the PL spectrum of the Cu mono-doped sample, the PL emission intensity of the Cu and Eu-codoped sample increases and a peak appears at 516 nm, indicating that Eu 3+ ions, which act as an impurity compensator and activator, are incorporated into the ZnS matrix, forming a donor level. Compared with the unannealed sample, the annealed one has an increased PL emission intensity and the peak position has a blue shift of 56 nm from 516 nm to 460 nm, which means that Eu 3+ ions reduce to Eu 2+ ions, thereby leading to the appearance of Eu 2+ characteristic emission and generating effective host-to-Eu 2+ energy transfer. The results indicate the potential applications of ZnS:Cu, Eu nanoparticles in optoelectronic devices.     

EuF3-NaYF4纳米晶/PNIPAm三元复合凝胶的荧光温敏行为与影响机制

分别采用水热法制备EuF3与NaYF4纳米晶, 与N-异丙基丙烯酰胺（NIPAm）混合后进行自由基聚合, 一步法合成EuF3-NaYF4纳米晶/聚N-异丙基丙烯酰胺（PNIPAm）三元复合凝胶。 对纳米晶与复合凝胶的结构与荧光性能进行了表征。 重点研究了三元复合凝胶的荧光温敏行为, 并对其影响机制进行了探讨。 结果表明, EuF3与NaYF4纳米晶在PNIPAm凝胶基体中的体相掺杂, 同样产生了明显的能量传递。 两种纳米晶相对含量的变化, 对复合凝胶的荧光温敏性能有重要影响。     

Photoluminescence of InGaAs/GaAs strained-layer quantum well structures under high pressure

Abstract

Measurements of the photoluminescence (PL) of strained In_0.2Ga_0.8As/GaAs and In_0.15Ga_0.85As/GaAs quantum well structures together with the PL from bulk GaAs, in a diamond anvil cell show that the pressure coefficient of the ground confined state in the wells depends upon well width (L_Z). In the thinnest wells, the coefficient is closer to that of the bulk GaAs (10.7 meV/kbar), as expected. However, in the widest wells the coefficients tend to values (9.5meV/kbar for the 15% alloy and 9.1meV/kbar for the 20% alloy) that are significantly lower than the pressure coefficient of unstrained In_0.53Ga_0.47As (10.9meV/kbar). It is found that the low pressure coefficients can not be explained by the change in uniaxial stress with pressure due to a difference in bulk moduli between the barrier and well.     

Porous Silicon as an Intermediate Buffer Layer for Zinc Oxide Nanorods

Zinc thin films were deposited onto porous silicon (PSi) substrates by dc sputtering using a Zn target. These films were then annealed under flowing (6 l/min) oxygen gas environment in the furnace at 600°C for 2 h. Porous silicon is used as an intermediate layer between silicon and ZnO films and it provides a large area composed of an array of voids. The PSi samples were prepared using photoelectrochemical method on n-type silicon wafer with (111) and (100) orientation. To prepare porous structures, the samples were dipped into a mixture of HF:ethanol (1:1) for 5 min with current densities of 50 mA/cm², and subjected to external illumination with a 500 W UV lamp. The surface morphology and the nanorod structure of the ZnO films were characterized by scanning electron microscope (SEM) and X-ray diffraction (XRD). We synthesized the ZnO nanorods with diameter of 80–100 nm without any catalysts or templates. The XRD pattern confirmed that the ZnO nanorods were of polycrystalline structure. The surface-related optical properties have been investigated by photoluminescence (PL) and Raman measurements at room temperature. Micro-Raman results showed that A₁(LO) of hexagonal ZnO/Si(111) and ZnO/Si(100) have been observed at 522 cm^–1 and 530 cm^–1, respectively. PL spectra peaks are clearly visible at 366 cm^–1 and 368 cm^–1 for ZnO film grown on porous Si(111) and Si(100) substrates, respectively. The PL spectral peak position in ZnO nanorods on porous silicon is blue-shifted with respect to that in unstrained ZnO (381 nm).