Direct-PECVD a-SiOx:H/a-SiNx:H 叠层系统对多晶硅电池的钝化研究

本文中应用全部PECVD工艺沉积a-SiOx:H、a-SiNx:H,和a-SiOx:H/a-SiNx:H叠层系统,比较了不同钝化膜对多晶硅太阳能电池发射极和背面钝化效果,应用FGA、RTP等热处理方法对钝化膜进行处理,重点讨论了FGA(Forming gas annealing)温度和时间的长短对钝化的影响.结果表明:低温FGA对只有单面钝化膜的硅片钝化效果不明显,而在800 ℃下FGA有明显作用,而且钝化效果随着时间的增加呈现出先增大后减小然后再增大的现象;退火后降温环境中是否有H和降温时间对钝化效果有很大的影响,但是对于双面膜无论FGA温度高低对钝化都有帮助,文中对上述现象做了合理的解释.最后利用双面叠层钝化膜经过FGA处理后得到的多晶硅片的少子寿命达到14.2 μs,比镀膜之前的3.0 μs提高了11.2 μs,使多晶硅太阳能电池暗电压 Voc达到630 mV.     

All-optical switching device for infrared based on PbTe quantum dots

Multilayers of PbTe quantum dots embedded in SiO₂ were fabricated by alternate use of Pulsed Laser Deposition (PLD) and Plasma Enhanced Chemical Vapor Deposition (PECVD) techniques. The morphological properties of the nanostructured material were studied by means of High Resolution Transmission Electron Microscopy (HRTEM), Grazing-Incidence Small-Angle X-ray scattering (GISAXS) and X-ray Reflectometry (XRR) techniques. A preliminary analysis of the GISAXS spectra provided information about the multilayer periodicity and its relationship to the size of the deposited PbTe nanoparticles. Finally multilayers were fabricated inside a Fabry–Perot cavity. The device was characterized by means of Scanning Electron Microscopy (SEM). Transmittance measurements show the device functionality in the infrared region.     

金刚石、碳纳米管、碳纳米管/纳米金刚石复合物的制备及生长机制研究

采用PECVD技术,通过对基片使用不同的预处理方法和沉积参数,合成了金刚石、碳纳米管及碳纳米管/纳米金刚石复合物.利用SEM,TEM,拉曼光谱对样品的形貌、成分和结构进行了研究.结果表明,在制备样品的过程中,基片的预处理方法和CH4/H2流量比至关重要,它们将影响所制得样品的晶粒大小、形核密度以及微观结构.     

Synthesis of amorphous carbon nanowalls by DC-PECVD on different substrates and study of its field emission properties

Amorphous carbon thin films with quasi vertical nanowall-like morphologies have been synthesized via direct current plasma enhanced chemical vapor deposition on both copper and silicon substrates with acetylene as a carbon precursor. The deposition temperature and pressure were maintained at 750 °C and 5 mbar respectively. The morphology of the as-prepared samples has been investigated with the help of a field emission scanning electron microscope and an atomic force microscope, both revealing nanowall-like morphologies with thicknesses of the walls ∼6-15 nm. The as-prepared carbon nanowalls showed good field electron emission with a turn-on field as low as 1.39 V/μm. The effect of inter-electrode distance on the field electron emission has also been studied in detail.     

Ultra high amorphous silicon passivation quality of crystalline silicon surface using in‐situ post‐deposition treatments

A parametric study of post‐deposition hydrogen plasma treatment of intrinsic a:Si:H films is performed. We demonstrate a significant improvement in passivation of c‐Si(100) promoting epitaxy after an in‐situ hydrogen plasma treatment depending mainly on the pressure and slightly on the power. Plasma diagnostic indicates an increase of H_α* signal with high power and low pressure. However, our analysis reveals a better hydrogen incorporation with high pressure and a slight increase in monohydride with high power. Longer H₂ plasma duration up to 50 s shows no detrimental effect on the passivation quality. Optimizing the in‐situ H₂ plasma treatment, high minority carrier lifetime over 15 ms was achieved after short thermal annealing. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Silicon heterojunction solar cell with amorphous silicon oxide buffer and microcrystalline silicon oxide contact layers

This Letter reports on the fabrication and characterization of silicon heterojunction solar cells with silicon oxide based buffer (intrinsic amorphous silicon oxide) and contact layers (doped microcrystalline silicon oxide) on flat p‐type wafers. The critical dependency of the cell performance on the front and rear buffer layer thickness reveals a trade‐off between the open circuit voltage V_oc and the fill factor FF. At the optimum, the highest efficiency of 18.5% (active area = 0.67 cm²) was achieved with V_oc = 664 mV, short circuit current J_sc = 35.7 mA/cm² and FF = 78.0%. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)