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81.
Duncan?P.?FaggEmail author Vladislav?V.?Kharton Jorge?R.?Frade 《Journal of Solid State Electrochemistry》2004,8(9):618-625
Small (2 mol%) cobalt oxide additions to ceria-gadolinia (CGO) materials considerably improve sinterability, making it possible to obtain ceramics with 95–99% density and sub-micrometre grain sizes at 1,170–1,370 K. The addition of Co causes a significant shift of the electrolytic domain to lower pO2. This modification to the minor electronic conductivity of the electrolyte material has influence on the cathodic oxygen reduction reaction. The impedance technique is shown to provide information not only about polarisation resistance, but also about the active electrode area from analysis of the current constriction resistance. It is demonstrated that this current constriction resistance can be related to the minor electronic contributions to total conductivity in these materials. A simple imbedded grid approach gives control of the contact area allowing the properties of the electrolyte materials to be studied. A much lower polarisation resistance for the Co-containing CGO electrolyte is observed, which can be clearly attributed to an increased three-phase reaction area in the Co-containing material, as a consequence of elevated p-type conductivity. 相似文献
82.
采用固相合成法制备了La0.8Sr0.2Ga0.8Mg0.2O3(LSGM8282)和La0.8Sr0.2Ga0.8Mg0.15Co0.05O3 (LSGMC5), 利用四电极交流阻抗法和Hebb-Wagner 极化法对比研究了两种材料的总电导率和电子电导率. 实验结果表明,
LSGM8282 的总电导率与氧分压无明显依赖关系, 而LSGMC5 的总电导率在高氧分压区随氧分压降低而增加,在中等氧分压区域基本保持不变. 在973-1173 K的温度范围内, LSGM8282的自由电子电导率以及电子空穴电导率的氧分压级数分别为-1/4和1/4.在1073-1173 K的温度范围内, LSGMC5的自由电子电导率以及电子空穴电导率的氧分压级数分别为-1/4和约为1/8, 表明LSGMC5的空穴产生机制可能与LSGM8282不同. LSGM8282 的氧离子电导率与氧分压无关, 而LSGMC5 的氧离子电导率在高氧分压区随氧分压的减小而增加. 相似文献
83.
Clovis Peppe Paola de Azevedo Mello Rafael Pavão das Chagas 《Journal of organometallic chemistry》2006,691(11):2335-2339
The organoindium compound derived from indium monobromide and dibromoacetonitrile reacts with carbonyl compounds to afford the corresponding 2-bromo-2-cyano-indium(III) alkoxide. The action of a second equivalent of indium monobromide onto the alkoxides derived from aldehydes promotes the Boord elimination of the β-related oxygen and bromine atoms leading to 2-alkenenitriles. 相似文献
84.
硫酸介质中Ti/SnO2/PbO2析氧阳极的研究 总被引:13,自引:0,他引:13
由于硫酸溶液具有高的电导、一般条件下性质稳定、价格相对低廉等优点,所以电化学合成大多在硫酸溶液中进行.阳极析氧是电化学合成不可避免的阳极过程.但因硫酸的强腐蚀性,以及从阳极析出的氧的强氧化性,使得能满足工业生产的阳极材料很缺乏.自1950年荷兰Hen... 相似文献
85.
A method for determining the oxygen content of the high-temperature superconductor YBa2Cu3O6.5+x is described. The superconductor is dissolved in 4.4 M hydrobromic acid, forming bromine. The mixture is then diluted with hydrochloric acid to obtain a solution of bromine and Cu(II) in 0.44 M hydrobromic acid and 1.1 M hydrochloric acid. As(III) is added in slight excess of that required to react with the bromine and the unreacted As(III) is determined by titration with potassium bromate. Oxygen does not interfere. The results of this method are in agreement with those of other iodimetric procedures. The dissolution of the superconductor in 4.4 M hydrobromic acid is much faster than in hydrochloric acid, the medium used in one iodimetric technique. YBa2Cu3O6.5+x sintered fibers and powder samples weighing from ca. 0.5 to 200 mg were analyzed for oxygen content. 相似文献
86.
<正> 光敏氧化效率是由敏化剂分子吸收光量子数及其产生单重态氧的量子产率决定的,这要求敏化剂的吸收光谱同光源的发射光谱很好地匹配。本文报道竹红菌甲素匹配高压钠灯有效地产生单重态氧,高效光敏氧化一系列具有不同反应活性的底物,成为单重态氧化学中一个新的光敏氧化体系。 相似文献
87.
Alfredo Carrascull Claudia Grzona Daniela Lick Marta Ponzi Esther Ponzi 《Reaction Kinetics and Catalysis Letters》2002,75(1):63-68
The catalytic combustion of particulate material was studied on cobalt catalysts promoted with potassium using different supports for its preparation. Silica, aluminium oxides and hydroxides, zirconium oxide and hydroxide were used as supports. The catalytic activity for combustion depends on the type of support used, the higher activity corresponding to the supported catalyst on zirconium oxide. TPR studies indicate that the interaction metal/support allows to explain the higher activity of the CoK/SiO2 catalyst with respect to the CoK/Al2O3 but the high activity found in CoK/ZrO2is not explained by this interaction. In all cases the Co and K improved the performance of the catalysts. 相似文献
88.
Jihong Cheng 《Journal of solid state chemistry》2004,177(1):126-133
LaGaO3 perovskites doped with Sr or Ba at the La site and Mg at the Ga site were prepared by solid-state reaction or sol-gel method and characterized. Enthalpies of formation from constituent oxides at 298 K were determined by high-temperature oxide melt solution calorimetry. Energetic trends are discussed in terms of defect chemistry. As oxygen deficiency increases, formation enthalpies define three trends, LaGa1−yMgyO3−δ (LGM), La1−xSrxGa1−yMgyO3−δ (LSGM), and La1−xBaxGa1−yMgyO3−δ (LBGM). They become less exothermic with increasing doping, suggesting a dominant destabilization effect from oxygen vacancies. The endothermic enthalpy of vacancy formation is 275±37, 166±18 and 138±12 kJ/mol of VO·· for LGM, LBGM and LSGM, respectively. Tolerance factor and ion size mismatch also affect enthalpies. In terms of energetics, Sr is the best dopant for the La site and Mg for the Ga site, supporting earlier studies, including oxygen ion conductivity and computer modeling. 相似文献
89.
Alexander I. Titkov Alexey N. Salanov Segrey V. Koscheev Andrey I. Boronin 《Reaction Kinetics and Catalysis Letters》2005,86(2):371-379
Summary The interaction of O2with Pd(110) has been studied by TDS and XPS at T = 400 K and at pressures PO2 from 2.6x10-6to 10 Pa. At low exposures in O2(e£1-5 L), an adsorption layer withqof ca.0.5 and with the O1s peak at BE = 529.3 eV has been found to form on the surface. Whenegrows from 5 to 108L, the position and intensity of the oxygen O1s peak remain practically constant. At the same time, as much as 5 mL of oxygen
is absorbed according to the TDS data. The results obtained by TDS and XPS indicate that oxygen penetrates deep into the subsurface
layers of palladium (315-20 ?) and is distributed in its bulk in a low concentration. 相似文献
90.
Tin dioxide SnO2−δ is a pronounced n-type electron conductor due to its oxygen deficiency. This study investigates the rate of chemical diffusion of oxygen in SnO2−δ single crystals, which is a crucial step in the overall stoichiometry change of the material. The chemical diffusion coefficient Dδ was determined from conductivity- and EPR-relaxation methods. The temperature dependence was found to be . The dependence on crystal orientation, dopant content and oxygen partial pressure was below experimental error. The latter observation leads to the conclusion that the chemical diffusion coefficient is close to the diffusion coefficient of oxygen vacancies. Along with the relaxation process resulting from the chemical diffusion of oxygen, additional processes were observed. One of these was attributed to complications in the defect chemistry of the material. The relevance of the results for the kinetics of drift processes of Taguchi sensors is discussed. 相似文献