将SVRT模型应用到单原子多原子反应F+CH2D2→CH2D/CHD2+DF/HF中

由于含时波包方法具有经典的直观又不乏量子力学的准确 ,选择含时波包方法来处理F +CH2 D2 →CH2 D/CHD2 +DF/HF反应 .把半刚性振转子 (SVRT)模型应用到该反应体系中 ,研究了两个通道中该反应从基态反应物开始在修正过的J1(MJ1)势能面上计算出来了反应几率、积分截面、速率常数 .反应几率随能量变化的图的数值结果给出了振荡结构 ,这些振荡结构是可以和动力学振荡联系起来的 .而这些振荡结构在积分截面随着能量变化的图中就被反应几率求和后的平均结果所掩盖了 .速率常数和实验结果的比较也得到了较好的结果 .     

Au等离子体M带5f-3d跃迁的电子离子碰撞激发速率系数

电子离子碰撞激发速率系数在超组态碰撞辐射模型中真实模拟非局域热动力学平衡Au激光等离子体M带谱 5f 3d跃迁中各种复杂电荷态离子的电离态特性 (譬如离子的平均电离度 ,相对丰度和能级布居数 )是必不可少的。基于准相对论多组态Hartree Fock方法和扭曲波玻恩交换近似 ,采用自编的扭曲波程序ACDW (9)和Fit(9) ,从头计算了Au等离子体M带 5f 3d电子离子碰撞激发速率系数。结果表明 :在“神光II”实验装置诊断的电子温度约 2keV ,电子密度约 6× 10 2 1cm-3 范围内 ,这些电子离子碰撞激发参数有利于采用超组态碰撞辐射模型模拟Au的激光等离子体M带 5f～ 3d细致谱的平均电离度和电荷态分布。     

Solid state phase equilibria in the Gd-Si-B system at 1270 K

Solid state phase equilibria in the ternary Gd-Si-B phase diagram have been proposed at 1270 K using X-ray diffraction, scanning electron microscopy and electron probe microanalysis. Prior to this work, the binary systems Gd-B, Gd-Si and Si-B have also been reinvestigated. The main characteristic of the ternary diagram is the occurrence of two new ternary compounds Gd₅Si₂B₈ and Gd₅Si₃B_0.64. The former crystallizes in tetragonal symmetry, space group P4/mbm with unit cell parameters a=7.2665(3), c=8.2229(7) Å, the second one presents hexagonal symmetry, space group P6₃/mcm with unit cell parameters a=8.5080(4),c=6.4141(2) Å. The X-ray structures of the two structurally related phases Gd₅Si₃B_0.64 and host binary Gd₅Si₃ have been refined from three-dimensional single-crystal intensity data to the final R values of 0.036 (R_w=0.046) and 0.046 (R_w=0.055) for 457 and 401 reflections, respectively with [F>4σ(F)]. Both structures exhibit the Mn₅Si₃-type structure, with in addition for Gd₅Si₃B_0.64 a partial occupancy by boron of the normally vacant interstitial site at the center of the Gd₆ octahedron, which corresponds to the origin of the unit cell. Bonding between the interstitial boron atoms and the gadolinium ones forming the Gd₆B polyhedra is indicated by the decrease in the corresponding Gd-Gd distances and consequently in the unit cell volume. Finally, the Gd-Si-B phase diagram is compared with the previously reported Er-Si-B, at 1070 K.     

Determination of the rheological behavior of epoxy–amine thermosets by dynamic mechanical analysis: Isothermal methods versus nonisothermal methods

The reticulation process of an epoxy resin using an amine as a cure agent was studied at different temperatures and concentrations of the cure agent with dynamic mechanical thermal analysis. The study was performed under both isothermal and nonisothermal conditions, and a temperature–time–transformation diagram was obtained. The measurements from the two modes gave similar results, although the nonisothermal mode required fewer experiments. © 2003 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 41: 1965–1977, 2003     

Dihydroboronium derivatives of (S,S)-1,2-bis(t-butylmethylphosphino)ethane as convenient chiral ligand precursors

Dihydroboronium derivatives of (S,S)-1,2-bis(t-butylmethylphosphino)ethane (t-Bu-BisP*) were prepared and used as chiral diphosphine ligand precursors in Rh-catalyzed asymmetric hydrogenation of methyl (Z)-acetamidocinnamate to afford the hydrogenation product in up to 94% enantioselectivity.     

GM(1,1)改进模型及其应用

根据 GM( 1 ,1 )灰色模型的指数特性 ,通过在区间上求积分给出了关于背景值的一个比较确切的计算公式 ,讨论了由此建立的 GM( 1 ,1 )改进模型的适用范围和预测精度 .结果表明改进模型比原 GM( 1 ,1 )模型适用性要强、模拟和预测精度要高 ,不仅适用于低增长序列、也适用于高增长序列 ,不仅适用于短期预测 ,同样也适用于中、长期预测     

Relative intensity noise of mode-locked fiber grating external cavity semiconductor lasers

The noise of hybrid soliton pulse source (HSPS) with linearly chirped Gaussian apodized fiber Bragg grating is analyzed by couple-mode equations including spontaneous emission noise when the HSPS is mode-locked. Relative intensity noise is calculated using numerical solutions of these equations. It is shown that transform limited pulses are generated over a wide tuning range around the fundamental mode-locking frequency with low spontaneous noise. However, a high noise level affects the operation of device, and therefore transform-limited pulses are not obtainable over a wide tuning range. It is also shown that noise is extremely sensitive to the RF and DC currents, linewidth enhancement factor, gain saturation parameter and spontaneous coupling factor.     

Does phenazine form triplet excimer and dimer anion radical?

Laser flash photolysis of phenazine (PZ) solution reveals the existence of a stable species with a long lifetime at 380 nm in addition to the usual triplet PZ at 440 nm. The former is suggested to be due to formation of triplet PZ excimer. The triplet excimer also undergoes photoinduced electron transfer with some aromatic amines. The formation of PZ dimer anion radical and amine cation radicals are confirmed by external magnetic field effect studies. Measurement of B_1/2, which estimates hyperfine present in the system, also supports this assignment.     

Morphology and spectral properties of thin films of benzoxazole derivatives of biphenyl

We have studied the spectral properties and morphology of thin films (TVD films) formed by thermal vacuum deposition of 4,4′-bis[(E)-1-(1,3-benzoxazol-2-yl)-2-ethenyl]-1,1′-biphenyl and its substituted derivatives. We have shown that introducing bulky 2,2′-oxyhexyl substituents into the biphenyl units leads to a shift of the fluorescence maximum for the TVD films toward shorter wavelengths, a decrease in their photostability, and aggregation of the films during storage. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 74, No. 3, pp. 300–303, May–June, 2007.     

Degradation process in organic thin film devices fabricated using P3HT

The stability of regioregular poly(3-hexylthiophene 2,5-diyl) (P3HT) thin films sandwiched between indium tin oxide (ITO) and aluminium (Al) electrodes have been investigated under normal environmental conditions (25°C and RH∼45–50%). Electrical and optical properties of ITO/P3HT/Al devices have been studied over a period of 30 days. Mobility μ of the order of 10⁻⁴ cm²/V-s has been obtained from the V ² law in the as-deposited P3HT films. Scanning electron microscopy (SEM) investigations show blistering of Al contacts in devices with a poly(3,4-ethylenedioxythiophene) (PEDOT) interlayer on application of voltage whereas no blistering is seen in devices without PEDOT. The results have been explained in terms of trap generation and propagation and the moisture-absorbing nature of PEDOT.