电感耦合等离子体发射光谱法测定粗二氧化碲中 铜、铅、锑、铋、砷和硒

粗二氧化碲作为碲精炼或碲化工产品生产的重要原料,其中共存元素铜、铅、砷、锑、铋、硒含量的准确测定对于生产过程质量控制和贸易结算具有重要意义,但目前没有粗二氧化碲中铜、铅、砷、锑、铋、硒含量检测的标准分析方法。采用王水和饱和氟化氢铵分解试样,在王水和酒石酸介质中,选用Cu 327.393 nm、Pb 220.353 nm、Sb 217.582 nm、Bi 223.061 nm、As 193.696 nm、Se 196.026 nm为分析谱线,采用电感耦合等离子体发射光谱(ICP-AES)法测定粗二氧化碲中铜、铅、锑、铋、砷和硒含量。各元素校准曲线的相关系数均大于0.999;铜、铅、锑、铋、砷和硒的检出限分别为0.0004%、0.0005%、0.0006%、0.0007%、0.0004%和0.0007%,定量检出限分别为0.0012%、0.0016%、0.0020%、0.0025%、0.0013%和0.0025%。按照实验方法测定5个粗二氧化碲样品中铜、铅、锑、铋、砷和硒,测定结果的相对标准偏差(RSD,n=7)为0.79%~4.8%,加标回收率为96.0%~103%。方法简单,精密度和准确度较高,可用于测定粗二氧化碲中铜、铅、砷、锑、铋、硒含量。     

HG-ICP-MS同时测定生物样品中痕量As,Se,Hg

以HNO3为介质,采用自行研制的二级气液分离器代替易消耗的膜分离器,在优化的实验条件下,采用HG-ICP-MS实现了As,Se,Hg的同时测定,分别获得了0.022,0.016,0.009 ngmL的检出限。实验研究了二级气液分离器中的气液分离行为、样品酸度、NaBH4质量浓度和引入方式等因素对测定灵敏度和精密度的影响。实验的结果表明,HG-ICP-MS同时测定As,Se,Hg的主要干扰来自于Fe,cu等过渡金属离子,样品溶液中抗坏血酸-硫脲的加入可以掩蔽这些离子的干扰。利用所建立的方法测定了人发、灌木叶和大米粉标样中痕量的As,Se,Hg,结果与标准参考值相符。     

烧结温度和升温速率对Pb(Sb1/3Mn2/3)0.05Zr0.47Ti0.48O3压电陶瓷性能的影响

采用传统固相法制备了Pb(Sb1/3 Mn2/3)0.05Zr0.47Ti0.48 O3 (PMS-PZT)压电陶瓷.利用XRD、SEM和EDS等研究PMS-PZT陶瓷体系在烧结过程中形成的过渡液相和形成过渡液相温度(1100℃)附近的升温速率对陶瓷结构、压电和介电性能的影响.结果表明:不同烧结温度下,所有样品均为单一的钙钛矿四方相,过渡液相不会对相的结构有影响,但是当烧结温度较低时,过渡液相在烧结后期以玻璃相在晶界附近富集,对陶瓷的压电和介电性能有很大影响.随着烧结温度和升温速率的升高,PMS-PZT晶粒尺寸增大,晶粒均匀性和规则性得以改善,晶化质量得到提高;d33测试和阻抗分析测试结果表明PMS-PZT样品在1100℃附近以7 ℃·min-1升温速率并在1250℃烧结时具有最好的压电和介电性能:d33 =313 C/N,kp=0.59,Qm=1481,εr=1437,tanδ=0.53;.     

Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters

High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5?μm mid-infrared (mid-IR) spectral range are currently of great demand for a wide variety of applications, in particular, gas sensing, noninvasive medical tests, IR spectroscopy etc. III-V compounds with a lattice constant of about 6.1?Å are traditionally used for this spectral range. The attractive idea to fabricate such emitters on GaAs substrates by using In(Ga,Al)As compounds is restricted by either the minimum operating wavelength of ～8?μm in case of pseudomorphic AlGaAs-based quantum cascade lasers or requires utilization of thick metamorphic In_xAl_1-xAs buffer layers (MBLs) playing a key role in reducing the density of threading dislocations (TDs) in an active region, which otherwise result in a strong decay of the quantum efficiency of such mid-IR emitters. In this review we present the results of careful investigations of employing the convex-graded In_xAl_1-xAs MBLs for fabrication by molecular beam epitaxy on GaAs (001) substrates of In(Ga,Al)As heterostructures with a combined type-II/type-I InSb/InAs/InGaAs quantum well (QW) for efficient mid-IR emitters (3–3.6?μm). The issues of strain relaxation, elastic stress balance, efficiency of radiative and non-radiative recombination at T?=?10–300?K are discussed in relation to molecular beam epitaxy (MBE) growth conditions and designs of the structures. A wide complex of techniques including in-situ reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning and transmission electron microscopies, X-ray diffractometry, reciprocal space mapping, selective area electron diffraction, as well as photoluminescence (PL) and Fourier-transformed infrared spectroscopy was used to study in detail structural and optical properties of the metamorphic QW structures. Optimization of the growth conditions (the substrate temperature, the As₄/III ratio) and elastic strain profiles governed by variation of an inverse step in the In content profile between the MBL and the InAlAs virtual substrate results in decrease in the TD density (down to 3?×?10⁷ cm^?2), increase of the thickness of the low-TD-density near-surface MBL region to 250–300?nm, the extremely low surface roughness with the RMS value of 1.6–2.4?nm, measured by AFM, as well as rather high 3.5?μm-PL intensity at temperatures up to 300?K in such structures. The obtained results indicate that the metamorphic InSb/In(Ga,Al)As QW heterostructures of proper design, grown under the optimum MBE conditions, are very promising for fabricating the efficient mid-IR emitters on a GaAs platform.     

Study on the electronic structure and optical properties of different Al constituent Ga1−xAlxAs

Using quantum mechanics GASTEP software package based on the first principle density function theory, the electronic structure and optical properties of Ga_1−xAl_xAs at different Al constituent are calculated. Result shows that with the increase of Al constituent, the band gap of Ga_1−xAl_xAs increases and varies from direct band gap to indirect band gap; the absorption band edge and the absorption peak move to high-energy side; the static reflectivity decreases. With the increasing of the incident photon energy, Ga_1−xAl_xAs shows metal reflective properties in certain energy range. With the increasing of Al constituent, static dielectric constant decreases and the intersection of dielectric function and the x-axis move towards high-energy side; the peak of energy loss function move to low-energy side and the peak value reduces.     

废渣中Pb、Cr、Ba、As测定方法的改进

本文利用高频电感耦合等离子体－发射光谱仪直接测定了印钞厂废渣中的Pb、Cr、Ba、As4种微量元素。方法简便、快速、可靠,具有良好的精密度和准确度。相对标准偏差为1．3％－5．8％,回收率为94％－103％。测定结果令人满意。     

α,α'-二氧代烯酮环二硫代缩醛的NMR研究

报道了7种新的α,α'-二氧代烯酮环二硫代缩醛化合物的NMR谱.应用¹H、¹³C NMR谱等确定了这7种新化合物的分子结构,并对全部谱峰进行了归属,初步探讨了分子结构对化学位移的影响.     

微波消解-电感耦合等离子体-质谱法测定黑木耳中铅、镉、砷、铜、锌和铬

建立了微波消解法前处理,电感耦合等离子体-质谱法(ICP-MS)快速测定黑木耳中Zn、Cu、Pb、Cd、Cr、As等重金属元素的方法.该法采用内标法校正监测和校正信号的短期和长期漂移,提高仪器的稳定性,改善测定的精密度,校正一般样品的基体影响,建立了测定208pb、114Cd、75As的干扰方程以消除同质异位素重叠和多原子粒子的干扰.该方法能准确测定大米粉标准物质(GBW 10010)和茶叶标准物质(GBW 10016)中Pb、Cd、Cr、Zn、Cu、As的含量,黑木耳样品的加标回收率为94.0％-107.3％,RSD为2.5％-5.2％.     

InAIAs／GaSbAs／InPDHBT与InP／GaSbAs／InPDHBT性能比较分析

双异质结双极晶体管（DHBT）的性能与发射区-基区（E．B）异质结和基区．集电区（B．C）异质结的能带突变类型关系密切,本文基于热场发射．扩散模型,对两类不同能带结构类型的新型DHBT的性能做了比较分析．结论表明：与作为当今研究热点的E．B和B．C异质结构均为全交错II型能带结构的InP／GaSbAs／InPDHBT的性能相比,E．B异质结采用传统I型、B．C异质结采用交错II型的一类新型能带结构的InAlAs／GaSbAs／InPDHBT虽然在开启电压上更高,但具有更好的电流驱动能力、直流增益和高频性能．     

双道原子荧光光谱法同时测定土壤中的砷和汞

建立了同时测定土壤中砷和汞的原子荧光光谱法。样品的相对标准偏差 As为 3.94 % ,Hg为 5 .0 0 % ,回收率在 90 %— 93%之间 ,对砷、汞的检出限分别为 0 .18μg/L和 0 .0 5 7μg/L。本法操作简便、快速、灵敏度高。