大角度周视彩虹全息图的色模糊

基于非傍轴量论，对普通共轭再现及利用孔径共轭技术再现种情况下大角度环形孔径周视彩虹全息图的色模糊进行了系统地分析，导出相应的表达式，并证明了大参考角及孔径共轭技术的采用并不会便最终像的模糊与普通彩虹全息相比发生明显变化，从而为该类分息图的应用提供了理论依据。     

管理者人格特征对其360度评价结果的影响研究

研究了360度反馈差异的原因的问题,重点考察管理者人格特征在其中的作用.研究在回顾文献的基础上,采用问卷调研法收集对同一组管理者的上级评价、自我评价和下级评价,以及管理者的人格数据.结果显示了反馈差异的存在,同时发现被评价者的人格特征对反馈差异的影响有所不同,其人格特征主要在下级评价中有显著作用,但是上级评价较少受到被评价者个性因素的影响.研究进一步讨论了产生这一现象的原因,并指出下一步的研究方向.     

像差及湍流对90°空间光混频器性能的影响研究

光信号在大气湍流中发生畸变,畸变光信号经过有缺陷的光学天线和空间光混频器后,存在混频效率低及抖动的问题。针对空间输出型和单模输出型的90°空间光混频器,推导了带初级像差的90°空间光混频器模型,并研究了湍流对混频效率的影响。仿真结果表明,对于探测器靶面半径为50μm的空间输出型混频器,像差量为0.2λ的倾斜、球差、离焦、彗差和像散分别导致混频效率下降9.8%、0.6%、0.36%、0.02%和0.01%。对于单模输出型混频器,像差量为0.2λ的倾斜、像散、离焦、彗差和球差分别导致混频效率下降14.11%、8.39%、6.35%、2.63%和1.13%。湍流强度Cn²小于6.4×10^-17m^-2/3时,空间输出型比单模输出型混频器的混频效率高19%以上,在湍流强度Cn²大于6.4×10^-16m^-2/3时,两者混频效率接近于0。最后设计加工了空间输出型和单模输出型90°混频器,并搭建性能测试平台。对于探测器靶面半径为50μm的空间输出型混频器,像差量为0.2λ的倾斜、球差和离焦导致混频效率下降52%、10%和6%;对于单模输出型混频器,像差量为0.2λ的倾斜、像散和离焦导致混频效率下降65%、24%和11%,其他像差对混频效率没有影响。湍流对混频器性能影响的实验结果显示,空间输出型光混频器中频信号值的标准差为21.388,该值远低于单模输出型标准差247.442。     

Dielectric properties of Zr-Sn-Ti-O thin films prepared by pulsed laser deposition

Zr_0.26Sn_0.23Ti_0.51O₂ (ZSTO) films with a dielectric constant of about 40 have been prepared directly on silicon substrates by pulsed laser deposition at 600 °C. TEM observation showed that the as-deposited films are amorphous. Differential thermal analysis showed that the ZSTO films crystallize at about 620 °C. Capacitance-voltage (C-V) characteristics of metal-oxide-semiconductor (MOS) composed of Pt/ZSTO/Si prepared at different deposition temperature have been measured. The EOT of the MOS structures with the same ZSTO physical thickness increased slightly when the deposition temperature increased. The EOT is about 4.2 nm for the 40 nm ZSTO deposited at 600 °C. The leakage current characteristics of ZSTO films for the as deposited, post-annealed in oxygen ambient and post-annealed in nitrogen ambient by rapid thermal annealing have been studied comparatively. The films post-annealed in nitrogen ambient have the lowest leakage current and the as-deposited films have the largest leakage current characteristics. It is proposed that amorphous Zr-Sn-Ti oxide stabilized at 600 °C is a potential dielectric material for dynamic random access memory and high k dielectric gate applications.     

The K°-relation on the Congruence Lattice of a Regular Semigroup with an Inverse Transversal

Let S be a regular semigroup with an inverse transversal S° and C(S) the congruence lattice of S. A relation K° on C(S) is introduced as follows: if ρ, θ∈ C(S), then we say that ρ and θ are K°-related if Ker ρ° = Ker θ° , where ρ° = ρ|S°. Expressions for the least and the greatest congruences in the same K°-class as ρ are provided. A number of equivalent conditions for K° being a congruence are given.     

油菜籽中主要硫甙的提纯与抗肿瘤活性

油菜籽中主要硫甙的提纯与抗肿瘤活性;硫代葡萄糖苷;分离提纯;S180;抗肿瘤作用     

Reaction of Cationic Vanadium Oxide Clusters with Ethylene in a Flow Tube Reactor

A time of °ight mass spectrometer coupled with a cluster formation and reaction source is employed to study the reactivity of cationic vanadium oxide clusters (VmOn+) toward ethylene (C2H4) in the gas phase. The cationic vanadium oxide clusters with m=1-10 and n=1-26 (depending on m) are generated by reaction of laser ablation created vanadium plasma with O2 in a supersonic expansion and then reacted with the ethylene in a °ow tube reactor. Hydrogen atoms are attached in most of the oxygen saturated clusters(2n?5m) in our experimental condition. The reactivity of VmOn+ toward C2H4 is usually higher than that of hydrogen containing clusters, VmOnH2x+. Larger clusters show less reactivity than smaller ones. Most of the observed products are in the forms of VmOnC2H4+ and VmOnH2xC2H4+ due to direct association. C2H4 clustering products ((C2H4)n+, n=2-6) are also observed.     

圆柱坐标下多孔径扫描拼接技术的迭代方法

从理论上提出了圆柱坐标下多孔径扫描拼接技术的迭代方法 ,并通过计算机模拟验证了其收敛性及精确性 ,证明这种算法对解决 36 0°面形测量问题具有重要的意义。     

Hydrogenated amorphous silicon with substrate-dependent structure

Hydrogenated amorphous silicon (a-Si:H) thin films grown at 250°C on (1 0 0) crystalline substrate using plasma-enhanced chemical vapor deposition (PECVD) with SiH₄/H₂ gas flow ratio equal to 5/1 (sccm) are investigated by transmission electron microscopy. It is found that the thin film is totally amorphous when grown on a glass substrate. But when the substrate is changed to crystalline silicon, some crystalline grains are found embedded in the amorphous structure in certain regions even if the thickness of the film reaches 600 nm. It is suggested that the amorphous silicon film grown on a crystalline silicon substrate at a temperature of 250°C without heavy H₂ dilution is a mixed network of a small amount of crystalline silicon and the major portion of amorphous silicon.