Raman properties embeddedof GaSb nanoparticlesin SiO2 films

The Raman shifts of nanocrystalline GaSb excited by an Ar^ ion laser at wavelengths 514.5, 496.5, 488.0, 476.5,and 457.9nm are studied by an SPEX-1403 laser Raman spectrometer respectively, and they are explained by phonon confinement, tensile stress, resonant Raman scattering and quantum size effects. The Stokes and anti-Stokes Raman spectra of GaSb nanocrystals strongly support the Raman feature of GaSb nanocrystals. The calculated optical spectra compare well with experimental data on Raman scattering GaSb nanocrystals.     

一类含有P-Laplacian算子的奇异边值问题解的确切个数

讨论了一类p-L ap lac ian算子型的奇异边值问题正解的确切个数以及解的性质.     

Spectral property and its shape transition on ^72-84Kr isotopes in microscopic core plus two-quasiparticle approach

By using a microscopic sdIBM-2 2q.p, approach, the levels of the ground-band, 7-band and partial two-quasi-particle bands for ^72-84Kr isotopes are calculated. The data obtained are in good agreement with the recent experimental results, and successfully reproduce the nuclear shape phase transition of ^72-S4Kr isotopes at zero temperature.The ground-state band is described successfully up to J^π=18^ and Ex=10.0MeV. Based on this model, the aligned requisite minimum energy has been deduced. The theoretical calculations indicate that no distinct change of nuclear states is caused by the abruptly broken pair of a boson, and predict that the first backbending of Kr isotopes may be the result of aligning of two quasi-neutrons in orbit g9/2, which galus the new experimental support of the measurements of g factors in the ^78-86Kr isotopes.     

Local Lyapunov Exponent for the Bak-Sneppen Model

The chaotic Property of the Bak-Sneppen model is studied from the local Lyapunov exponent in the same way as for dynamical nonlinear systems.Similar behaviour is found for the one- and two-dimensional Bak-Sneppen models.The Lyapunov exponents for the two cases have the same order of magnitude and both decrease at early evolution but show a slow increasing saturation at late evolution.     

Pyroelectricity and Spontaneous Polarization in [111] Oriented 0.955 Pb（Zn1/3Nb2/3）O3-0.045PbTiO3 Single Crystals

We report that the measurements of the pyroelectric current of the pre-poled [111]-oriented 0.955 Pb（Zn1/3Nb2/3） O3-0.045 PbTiO3 （PZN-4.5%PT） single crystals can shed some light on the phase transition and spontaneous polarization characters of this material in a similar way to measures of remanent polarization and dielectric properties. The pyroelectric current is measured and the corresponding spontaneous polarization is calculated as a function of temperature with various poling fields added during cooling the sample from 200℃ to room temperature. Critical electric field of 0.061 k V/cm is found to be essential to induce the intermediate ferroelectric orthorhombic phase between the ferroelectric rhombohedral and tetragonal phases. Below the critical field, the polarization increases almost linearly with the increase of poling field. At the critical field, the polarization at 30OC increases abruptly from 14μC/cm^2 for a poling field of O.06kV/cm to 29.5μC/cm^2 for a poling field of 0.061 kV/cm, and afterwards, increases slowly and saturates to 31 μC/cm^2 for poling fields beyond 0.55 kV/cm.     

Temperature-Dependent Dynamic Properties of LixMn2O4 in Monte Carlo Simulations

Monte Carlo (MC) simulations are used to simulate the voltage profile and the ionic conductivity s of Li ions in LixMn2O4 and its dependence on the lithium concentration x. The open circuit potential shows clearly the two plateaus in the charge/discharge curve, which agrees well with the experimental results. The two plateaus become more and more steep when the temperature is increased. The simulated ionic conductivity shows an M-shaped curve in the plot of ionic conductivity cr versus x when the simulation temperature is low. Interestingly,the minimum valley, which lies at the middle single-phase area near x=0.5, disappears gradually when the temperature increases to 453K.     

Quantum Games of Continuous Distributed Incomplete Information

We study two-player quantum games of incomplete information in which both the sides have partial information.The previous results of Du et al. [Phys. Rev. E 68 (2003) 016124] are incorporated in our more general formalism.Because of different roles played by the total information uncertainty and the information asymmetry, the game exhibits many interesting features.     

Electron Holography of Barrier Structures in Co／ZrAlOx／Co Magnetic Tunnel Junctions

We investigate the potential profiles and elemental distribution of barriers in Co/ZrAlOx/Co magnetic tunnel junctions (MTJs) using electron holography (EH) and scanning transmission electron microscopy. The MTJ barriers are introduced by oxidizing a bilayer consisting with a uniform 0.45-nm Al layer and a wedge-shaped Zr layer (0-2 nm). From the scanning transmission electron microscopy, AlOx and ZrOx layers are mixed together, indicating that compact AlOx layer cannot be formed in such a bilayer structure of barriers. The Eli results reveal that there are no sharp interfaces between the barrier and magnetic electrodes, which may be responsible for a smaller tunnelling magnetoresistance compared with the MTJs of Co/AlOx/Co.     

一种有效记忆热力学关系的方法

 均匀物质的热力学性质是热力学理论的基础知识,也是入门知识,因而对这部分知识的学习和掌握就显得尤为重要。但是,在历年的教学中发现,学生对这部分知识的掌握并不好,究其原因,重要的一条是这部分内容概念多、参量多、公式多、状态多,并且各参量之间,各公式之间互相联系、十分类似,因而记忆时特别容易混淆,从而导致理解和应用的障碍。所以,若能找到一种便于记忆的方法,那么,无论是对学生还是对教师都将有很大帮助。基于以上这些认识,本文将从教学内容出发,本着直观简单的原则,介绍一种十分便于记忆的方法---函数图像法。     

Structure and Photoluminescence of Nano-ZnO Films Grown on a Si （100） Substrate by Oxygen- and Argon-Plasma-Assisted Thermal Evaporation of Metallic Zn

Nano-ZnO thin films were prepared by oxygen- and argon-plasma-assisted thermal evaporation of metallic Zn at low temperature, followed by low-temperature annealing at 300℃ to 500℃ in oxygen ambient. X-ray diffraction patterns indicate that the nano-ZnO films have a polycrystalline hexagonal wurtzite structure. Raman scattering spectra demonstrate the existence of interface layers between Zn and ZnO. Upon annealing at 400℃ for i h, the interface mode disappears, and photoluminescence spectra show a very strong ultraviolet emission peak around 381 nm. The temperature-dependent PL spectra indicate that the UV band is due to free-exciton emission.