乙烷添加对 Mo/HZSM-5 催化剂上甲烷芳构化反应的影响

 研究了乙烷添加对 Mo/HZSM-5 催化剂上甲烷芳构化反应性能的影响. 在所考察的反应条件下, 未观察到乙烷添加对甲烷转化的促进作用, 乙烷本身反而生成甲烷, 同时导致更高的积炭生成速率, 使 Mo/HZSM-5 催化剂更快地失活. 但添加乙烷加速了钼活性中心的形成, 缩短了芳构化反应的诱导期, 使苯的生成提前.     

A coordination polymer of manganese (III) porphyrinate with right-handed helicity and opticity

A first example of 1D coordination polymer [MnTHPP·H₂O·(DMF)₂ (1)] with right-handed helicity and opticity was successfully assembled. Crystal analyses indicate that the right-handed helical assembly is based on coordination bonds from peripheral to center, associating with the saddle distortion of the molecular planes. In its crystal architecture, MnTHPP [manganese (III) ion coordinated by 5,10,15,20-tetra(4-hydroxyphenyl) porphyrin] molecules were ligated each other via the axial coordination between –PhO^? → Mn^III (peripheral to center model, from the peripherally deprotonated hydroxyphenyl to the central metal of the neighbor molecule) to construct the right-handed helices, and the helices are sustained by plentiful hydrogen bonding. Meanwhile DMF molecules are entrapped within the voids among the helices. This is a rare example of the multiporphyrin arrays with right-handed helices bearing opticity.     

A resonance light-scattering off–on system for studies of the selective interaction between adriamycin and DNA

On the basis of the resonance light scattering (RLS) of Ag nanoparticles (AgNPs), an RLS off–on system was developed for studies of the selective interaction between adriamycin (ADM) and DNA. In this strategy, addition of ADM could induce a proportional decrease in the RLS intensity of AgNPs; this could be used to detect trace amounts of ADM with a detection limit of 12.75 ng mL⁻¹ in the range 0.021–10.0 μg mL⁻¹. Subsequently, by investigating the ability of different DNA sequences to restore the RLS intensity of the analytical systems, we found that ADM was selective to dsDNA and had an obvious preference for sequences that were rich in guanine and cytosine bases. In order to validate the results of the RLS assay, fluorescence quenching was used, and binding constants and binding numbers of each system were calculated. Compared with other methods, this RLS off–on strategy was more sensitive, fast, and reliable. It has also supplied a novel method for studying the sequence selectivity of DNA-targeted anticancer drugs and is a novel application of the RLS technique in analytical chemistry.     

Enhanced Electrochemical Performance of Supercapacitors via Atomic Layer Deposition of ZnO on the Activated Carbon Electrode Material

Fabricating electrical double-layer capacitors (EDLCs) with high energy density for various applications has been of great interest in recent years. However, activated carbon (AC) electrodes are restricted to a lower operating voltage because they suffer from instability above a threshold potential window. Thus, they are limited in their energy storage. The deposition of inorganic compounds’ atomic layer deposition (ALD) aiming to enhance cycling performance of supercapacitors and battery electrodes can be applied to the AC electrode materials. Here, we report on the investigation of zinc oxide (ZnO) coating strategy in terms of different pulse times of precursors, ALD cycles, and deposition temperatures to ensure high electrical conductivity and capacitance retention without blocking the micropores of the AC electrode. Crystalline ZnO phase with its optimal forming condition is obtained preferably using a longer precursor pulse time. Supercapacitors comprising AC electrodes coated with 20 cycles of ALD ZnO at 70 °C and operated in TEABF₄/acetonitrile organic electrolyte show a specific capacitance of 23.13 F g⁻¹ at 5 mA cm⁻² and enhanced capacitance retention at 3.2 V, which well exceeds the normal working voltage of a commercial EDLC product (2.7 V). This work delivers an additional feasible approach of using ZnO ALD modification of AC materials, enhancing and promoting stable EDLC cells under high working voltages.     

Theoretical analysis of feedback high birefringence fiber loop mirror for application in single-frequency fiber lasers

A feedback high birefringence fiber loop mirror with a piece of erbium-doped fiber and a polarization controller is newly proposed. When the erbium-doped fiber is properly pumped to offset the loss of the feedback ring in the loop mirror, narrowband transmission peaks with large effective free spectral range can be achieved by the intrinsic vernier effect between orthogonally polarized lights respectively traveling along the two primary axes of the high birefringence fiber. In addition, the side transmission suppression ratio can reach about 6 dB. These special properties are independent of the polarization state of the input signal, which makes it feasible for the proposed feedback high birefringence fiber loop mirror to be employed as a narrowband filter in single-frequency fiber lasers.     

A Versatile Triphenylamine/Fluoranthene‐Based Derivative as a Nondoped Green‐Emitting,Hole‐Transporting Interlayer for Electroluminescent Devices

A new triphenylamine‐bridged fluoranthene derivative, 4‐(7,10‐diphenylfluoranthen‐8‐yl)‐N‐[4‐(7,10‐diphenylfluoranthen‐8‐yl)phenyl]‐N‐phenylaniline (BDPFPA), with a high glass transition temperature of 220 °C has been synthesized and characterized. BDPFPA is a highly fluorescent and versatile material that can be used as a nondoped green emitter and as a hole transporter. BDPFPA was used in a standard trilayer device as the emitting layer, which showed a low turn‐on voltage (<3 V) and a high efficiency of 11.6 cd A^?1. The device also shows little efficiency roll‐off at high brightness. For example, the efficiency can still be maintained at 11.4 cd A^?1 (5.4 lm W^?1) at a brightness of 10 000 cd m^?2. These results are among the best reported for nondoped fluorescent green organic light‐emitting diodes. A simple bilayer device, in which BDPFPA serves as a hole‐transporting layer, has a maximum power efficiency of 3.3 lm W^?1 and the performance is nearly 40 % higher than that of an N,N′‐bis(1‐naphthyl)‐N,N′‐ diphenyl‐1,1′‐biphenyl‐4,4′‐diamine (NPB)‐based standard device.     

冷热循环处理对Fe基块体非晶合金摩擦磨损性能的影响

本文中采用电弧熔炼和感应熔炼后喷铸的方法制备了厚度为4 mm的Fe基块体非晶合金. 通过对Fe₄₁Co₇Cr₁₅Mo₁₄C₁₅B₆Y₂块体非晶合金进行30次和60次冷热循环处理,并在往复式摩擦磨损条件下,研究冷热循环工艺对其摩擦磨损性能的影响. 结果表明:冷热循环处理没有显著改变铁基非晶合金的非晶态结构. 30次冷热循环处理后,Fe基块体非晶合金发生了明显的软化,平均硬度由铸态的16.06 GPa降为14.06 GPa,平均弹性模量由241 GPa降为216 GPa. 随着冷热循环次数和载荷的增加,非晶合金的平均摩擦系数和磨损率先减小后增大. 冷热循环处理有利于降低非晶合金的平均摩擦系数和磨损量. 当冷热循环次数为30次、载荷为30 N时,铁基非晶的摩擦系数由0.77降至0.72,表现出最小的摩擦系数,同时磨损率降低13.3%,表现出最小的磨损率[1.04×10?6 mm3/(m·N)]. 铸态Fe基块体非晶合金的磨损机理以疲劳断裂为主,伴随着轻微的磨粒磨损. 随着冷热循环次数的增加,疲劳导致的脆性断裂程度降低,磨损机制向磨粒磨损和疲劳断裂的共同作用转变. 所以,冷热循环处理有望成为调控非晶态金属材料摩擦学性能的有效手段. 进一步深化对冷热循环处理的理解,必将有利于推动非晶态材料在摩擦学领域的应用.      

The Singular Structure of Non-selfsimilar Global Solutions of n Dimensional Burgers Equation

We investigate the singular structure for n dimensional non-selfsimilar global solutions and interaction of non-selfsimilar elementary wave of n dimensional Burgers equation, where the initial discontinuity is a n dimensional smooth surface and initial data just contain two different constant states, global solutions and some new phenomena are discovered. An elegant technique is proposed to construct n dimensional shock wave without dimensional reduction or coordinate transformation.     

Carrier injection level dependence of post-breakdown metastability in semi-insulating GaAs

Recently, a room temperature electrically induced metastability in semi-insulating (SI)-GaAs has been reported in which the normally high resistance state of SI-GaAs converts into a low resistance state when breakdown electric fields are applied to the metal/SI-GaAs/metal system. The low resistance state continues to persist when the electric field is lowered below the breakdown bias and as such may be treated as metastable state of the material. This phenomenon is believed to be closely related to the ‘lock-on’ effect utilized in high power photoconductive semiconductor switches made from SI-GaAs. The present study seeks to understand the mechanism for this electrically induced metastability by studying the influence of the injection current on the metastable phase. The data favor an interpretation of the high current state of the SI-GaAs in terms of double carrier injection and the sustaining of an internal electron-hole plasma in the material.