排序方式： 共有44条查询结果，搜索用时 31 毫秒
21.
W. Lockman T. Meyer J. Rander P. Schlein R. Webb S. Erhan J. Zsembery 《Physics letters. [Part B]》1979,85(4):443-446
A search for the charmed baryon, Λc+, has been carried out in inclusively, measured Λ0π±π+π? and K?π±p final states with longitudinal x > 0.75 in an experiment at the CERN intersecting storage rings. An effect with invariant mass near 2.3 GeV is observed in Λ0π+π+π? with cross section times branching ratio Bσ = (2.8±1.0) μb; similar effect is observed in K?π+p with Bσ = (2.3 ± 0.3) μb. The effect is seen only in the positive charge state, in agreement with an interpretation as Λc+. However, it is pointed out that in the same experiment, the non-charmed hyperon state Σ(1385)+ also has a cross section much larger than its corresponding negative charge state Σ(1385)?. 相似文献
22.
S. Erhan W. Lockman M. Medinnis T. Meyer J. Rander P. Schlein R. Webb A. Boehm H. Foeth A. Staude R. Ellis B. Naroska P. Strolin J. Zsembery 《Physics letters. [Part B]》1979,82(2):301-304
Λ0's produced in the inclusive reaction pp → Λ° + X with √s = 53 and 62 GeV at the CERN Intersecting Storage Rings are observed to be polarized along the normal to the production plane. In the ranges of longitudinal and transverse momenta, 15–24 and 0.6-1.4 GeV/c, respectively, the mean polarization is found to be ?(0.357±0.055). 相似文献
23.
24.
Baltrusaitis RM Becker JJ Blaylock GT Brown JS Bunnell KO Burnett TH Cassell RE Coffman D Cook V Coward DH Dado S Dorfan DE Dubois GP Duncan AL Einsweiler KF Eisenstein BI Fabrizio R Gladding G Grancagnolo F Hamilton RP Hauser J Heusch CA Hitlin DG Köpke L Lockman WS Mallik U Mockett PM Mozley RF Nappi A Odian A Partridge R Perrier J Plaetzer SA Richman JD Roehrig J Russell JJ Sadrozinski HF Scarlatella M Schalk TL Schindler RH Seiden A Simopoulos C Sleeman JC Spadafora AL Stockdale IE 《Physical review letters》1986,56(20):2140-2143
25.
Adler J Becker JJ Blaylock GT Bolton T Brown JS Bunnell KO Burnett TH Cassell RE Coffman D Cook V Coward DH Dorfan DE Dubois GP Duncan AL Eigen G Einsweiler KF Eisenstein BI Freese T Gladding G Grab C Grancagnolo F Hamilton RP Hauser J Heusch CA Hitlin DG Izen JM Köpke L Li A Lockman WS Mallik U Matthews CG Mir R Mockett PM Mozley RF Nemati B Odian A Parrish L Partridge R Perrier J Pitman D Plaetzer SA Richman JD Sadrozinski HF Scarlatella M Schalk TL Schindler RH Seiden A Simopoulos C 《Physical review letters》1987,59(14):1527-1529
26.
Skwarnicki T Antreasyan D Besset D Bienlein JK Bloom ED Brock I Cabenda R Cartacci A Cavalli-Sforza M Clare R Conforto G Cooper S Cowan R Coyne D Edwards C Engler A Folger G Fridman A Gaiser J Gelphman D Godfrey G Heimlich FH Hofstadter R Irion J Jakubowski Z Keh S Kilian H Kirkbride I Kloiber T Koch W König AC Königsmann K Kraemer RW Lee R Leffler S Lekebusch R Litke AM Lockman W Lowe S Lurz B Marlow D Maschmann W Matsui T Messing F Metzger WJ Monteleoni B Nernst R Niczyporuk B Nowak G Peck C 《Physical review letters》1987,58(10):972-975
27.
Adler J Becker JJ Blaylock GT Bolton T Brown JS Bunnell KO Burnett TH Cassell RE Coffman D Cook V Coward DH Dorfan DE Dubois GP Duncan AL Eigen G Einsweiler KF Eisenstein BI Freese T Gladding G Grab C Grancagnolo F Hamilton RP Hauser J Heusch CA Hitlin DG Izen JM Köpke L Li A Lockman WS Mallik U Matthews CG Mir R Mockett PM Mozley RF Nemati B Odian A Parrish L Partridge R Perrier J Pitman D Plaetzer SA Richman JD Sadrozinski HF Scarlatella M Schalk TL Schindler RH Seiden A Simopoulos C 《Physical review letters》1988,60(14):1375-1378
28.
Way Foong Lim Zainovia Lockman Kuan Yew Cheong 《Applied Physics A: Materials Science & Processing》2012,107(2):459-467
Metal-organic decomposed lanthanum cerium oxide (La
x
Ce
y
O
z
) film had been spin-coated on n-type Si substrate. Effects of post-deposition annealing temperature and time on the metal-oxide-semiconductor
(MOS) properties of the film were studied. As temperature increased from 400 to 1000°C for 15 minutes dwell time, La
x
Ce
y
O
z
demonstrated a decrease in interface trap density (D
it) and total interface trap density (D
total), which were related to the formation of SiO
x
/silicates interfacial layer (IL). The lowest leakage current density and highest dielectric breakdown voltage (V
B) was obtained in 1000°C-annealed sample. When longer annealing times (30–120 minutes) were studied on the 1000°C-annealed
sample, the sample annealed at 1000°C for 120 min showed the best MOS characteristics with V
B of 30 V. Reasons contributing to such observation were discussed. 相似文献
29.
Adler J Bai Z Blaylock GT Bolton T Brient J Browder TE Brown JS Bunnell KO Burchell M Burnett TH Cassell RE Coffman D Cook V Coward DH DeJongh F Dorfan DE Drinkard J Dubois GP Eigen G Einsweiler KF Eisenstein BI Freese T Gatto C Gladding G Grab C Hauser J Heusch CA Hitlin DG Izen JM Kim PC Köpke L Labs J Li A Lockman WS Mallik U Matthews CG Mincer AI Mir R Mockett PM Nemati B Odian A Parrish L Partridge R Pitman D Plaetzer SA Richman JD Sadrozinski HF Scarlatella M Schalk TL Schindler RH 《Physical review letters》1990,64(22):2615-2618
30.
Coffman D DeJongh F Dubois GP Eigen G Hitlin DG Matthews CG Mincer A Richman J Weinstein AJ Wisniewski WJ Zhu Y Bolton T Bunnell KO Cassell RE Coward DH Kim PC Labs J Odian A Pitman D Schindler RH Toki W Wasserbaech S Drinkard JJ Gatto C Heusch CA Lockman WS Scarlatella M Sadrozinski HF Schalk TL Seiden A Weseler S Eisenstein BI Freese T Gladding G Izen JM Stockdale IE Tripsas B Mallik U Wang MZ Brown J Burnett TH Li AD Mir R Mockett PM Nemati B Parrish L Willutzki H 《Physical review D: Particles and fields》1992,45(7):2196-2211