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991.
992.
探讨了硫酸铝、聚铝、聚铁对环境水体中的镉的沉淀能力,实验证明当在实际环境水样品中调节pH在7-9之间,聚铁或聚铝能对环境水体中的镉很好的沉淀作用,短期作用比较明显,药剂能在30min左右达到2h的处理效果的70%-90%,而长期作用后(18h)能将水体中的镉降低到10μg/L以下,一立方水的用药量在100-400g之间就可以到达很好的处理效果,而且无二次污染,可为环境水中镉污染的应急处理药品. 相似文献
993.
994.
SiO2 films have been prepared on sapphire by radio frequency magnetron reactive sputtering in order to increase the optical and mechanical properties of infrared windows and domes of sapphire at elevated temperatures. Infrared transmission and flexural strength of uncoated and coated sapphires have been investigated at different temperatures. SiO2 films were shown to have apparent antireflective effect on sapphire substrate at room temperature. With increasing temperature, the coated sapphires have larger average transmission than the uncoated ones. The temperature was proven to only weakly affect the absorption coefficient and antireflection capability of the deposited films. It is also indicated that the flexural strengths of the c-axis sapphire samples coated with SiO2 films are increased by 1.2 and 1.5 times than those of uncoated at 600 and 800 °C, respectively. 相似文献
995.
High-order harmonic generations from a one-dimensional Coulomb potential atom are calculated with the initial state prepared as a coherent superposition between its ground and first excited states. When the energy difference of the two states is small, we can choose proper laser pulse such that the first excited state can be excited only to other bound states instead of being ionized. We show that only the hyper-Raman lines are observable instead of the harmonics. The energy difference of the ground and the first excited state can be deduced from the highest peak of the hyper-Raman lines. We further show that the similar results can be obtained by using a combination of two laser pulses with different frequencies interacting with the atom initially at the ground state. 相似文献
996.
We report on structural change in an Au^3+-doped BK7 glass irradiated by an infrared femtosecond laser at 800 nm. A grating structure is inscribed in the glass sample. The glass sample is then annealed at various temperatures. Structural change of the grating is observed by an optical microscope. Absorption spectra indicate that colour centres are induced after the laser irradiation, and they decrease with increasing annealing temperature. Au nanoparticles are precipitated at high temperatures (≥ 600℃). The mechanisms of the phenomena are discussed. 相似文献
997.
Effect of Pretreatment of TaN Substrates on Atomic Layer Deposition Growth of Ru Thin Films 下载免费PDF全文
The polycrystalline ruthenium films are grown on TaN substrates by atomic layer deposition (ALD) using bis(cyclopentadienyl) ruthenium [RuCp2] and oxygen as ruthenium precursor and reactant respectively at a deposition temperature of 330℃. The low-energy Ar ion bombardment and Ru pre-deposition are performed to the underlying TaN substrates before ALD process in order to improve the Ru nucleation. X-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy and atomic force microscopy are carried out to characterize the properties of ALD Ru films. The results show that the nucleation density of Ru films with Ar^+ bombardment to the underlying TaN substrates is much higher than that of the ones without any pretreatment. The possible reasons are discussed. 相似文献
998.
Growth of Semi-Insulating GaN Using N2 as Nucleation Layer Carrier Gas Combining with an Optimized Annealing Time 下载免费PDF全文
Semi-insulating (SI) GaN is grown using N2 as the nucleation layer (NL) carrier gas combined with an optimized annealing time by metalorganic chemical vapour deposition. Influence of using 1-12 and N2 as the NL carrier gas is investigated in our experiment. It is found that the sheet resistance of unintentionally doped GaN can be increased from 10^4 Ω/sq to 10^10 Ω/sq by changing the NL carrier gas from 1-12 to N2 while keeping the other growth parameters to be constant, however crystal quality and roughness of the tilm are degraded unambiguously. This situation can be improved by optimizing the NL annealing time. The high resistance of GaN grown on NL using N2 as the carrier gas is due to higher density of threading dislocations caused by the higher density of nucleation islands and small statistic diameter grain compared to the one using 1-12 as carrier gas. Annealing the NL for an optimized annealing time can decrease the density of threading dislocation and improve the tilm roughness and interface of AlGaN/GaN without degrading the sheet resistance of as-grown GaN signiticantly. High-quality SI GaN is grown after optimizing the annealing time, and AlGaN/GaN high electron mobility transistors are also prepared. 相似文献
999.
傅元勇 周书华T. Koike S. Kinoshita Y. Ma Y. Miura K. Miwa Y. Miyagi K. Shirotori T. Suzuki H. Tamura K. Tsukada M. Ukai K. Futatsukawa K. Hosomi M. Kawai M. Mimori N. Terada N. Maruyama K. Aoki H Fujioka Y Kakiguchi T. Nagae D. Nakajima H Noumi T Takahashi T.N. Takahashi A. Toyota M. Dairaku T. Fukuda S. Minami W. Imoto S. Aiimura K. Tanida 《中国物理快报》2007,24(8):2216-2218
From the ^12 C(π^+,K^+)^12 AC reaction the γ -rays of 261.6±0.24 ke V(7/2^+ →5/2^+)and 1481.7±0.7 ke V(1/2^+ →5/2^+) of ^11 A B,and 2667.3±2.8 keV(1^- 2 → 2^- 1)of ^12 A C hypernuclei have been identified using a large germanium detector array Hyperball2 at K6 beam line of KEK. The observed energies of the transitions 1481.7keV and 261.6 keV are significantly different from the values predicted by the shell model using the △ and SN parameters determined from the ^7 △ Li data. 相似文献
1000.
Direct numerical simulation (DNS) of a spatially evolving fiat-plate boundary layer transition process at free stream Mach number 0. 7 is performed. Tollmien-Schlichting (T-S) waves are added on the inlet boundary as the disturbances before transition. Typical coherent structures in the transition process are investigated based on the second invariant of velocity gradient tensor. The instantaneous shear stress and the mean velocity profile in the transition region are studied. In our view, the fact that the peak value of shear stress in the stress concentration area increases and exceeds a threshold value during the later stage of the trallsition process plays an important role in the laminar breakdown process. 相似文献