Strained silacycle-catalyzed asymmetric Diels-Alder cycloadditions: the first highly enantioselective silicon Lewis acid catalyst

The first highly enantioselective silicon Lewis acid catalyst for an asymmetric organic transformation has been developed. The catalyst derives its activity from the strain induced in the silicon center by virtue of being constrained in a five-membered ring. A simple tridentate ligand has been developed and the derived chlorosilane complex catalyzes the Diels-Alder cycloaddition of methacrolein and cyclopentadiene with 94% ee.     

Mesorbitolina (Cretaceous larger foraminifera) from the Yezo Group in Hokkaido,Japan and its stratigraphic and paleobiogeographic significance

In this paper, we describe an Aptian (Early Cretaceous) larger foraminiferal species Orbitolina (Mesorbitolina) parva from the limestone olistoliths in the lower part of the Yezo Group in the Yubari–Ashibetsu area, central Hokkaido and from limestone pebbles in the lowermost part of the Yezo Group in the Nakagawa area, northern Hokkaido. This is the first report of this species from the circum-North Pacific regions. Based on its occurrences, the shallow-marine carbonates, re-deposited in the lower part of the Yezo Group, are precisely assigned in age to the Late Aptian. Comparison of the lower part of the Yezo Group in central and northern Hokkaido indicates differences of the Aptian–Albian depositional history between the two areas. This study reveals that after Late Aptian, Mesogean key taxa (typical Cretaceous Tethyan biota) demised in the Northwest Pacific.     

Influence of Zn Diffusion on Bandwidth and Extinction in MQW Electroabsorption Modulators Buried with Semi-Insulating InP

A comprehensive analysis of multi-quantum-well electroabsorption modulators buried with semi-insulating (SI)-InP is presented. We quantitatively demonstrate that suppression of Zn diffusion into the burying and optical core layers plays a key role in high-speed and high-extinction operation.     

Design and synthesis of novel imidazolium-based ionic liquids with a pseudo crown-ether moiety: diastereomeric interaction of a racemic ionic liquid with enantiopure europium complexes

A planar-chiral imidazolium salt with a tris(oxoethylene) bridge was synthesized, and its potential application as a room temperature ionic liquid with a molecular-recognition ability was demonstrated.     

On global integrability of BMO functions on general domains

Extending results of Staples and Smith-Stegenga, we characterize measurable subsets of a given domainD ⊃R ⁿ on which BMO(D) functions areL ^p integrable or exponentially integrable. In particular, we characterize uniform domains by the integrability of BMO functions. We also remark on the boundedness of domains satisfying a certain integrability condition for the quasihyperbolic metric.     

Method of observation of low density interface states by means of X-ray photoelectron spectroscopy under bias and passivation by cyanide ions

X-ray photoelectron spectroscopy (XPS) measurements under bias can observe low density interface states for metal-oxide-semiconductor (MOS) diodes with low densities. This method can give energy distribution of interface states for ultrathin insulating layers for which electrical measurements cannot be performed due to a high density leakage current. During the XPS measurements, a bias voltage is applied to the rear semiconductor surface with respect to the ∼3 nm-thick front platinum layer connected to the ground, and the bias voltage changes the occupation of interface states. Charges accumulated in the interface states shift semiconductor core levels at the interface, and thus the analysis of the bias-induced shifts of the semiconductor core levels measured as a function of the bias voltage gives energy distribution of interface states. In the case of Si-based MOS diodes, the energy distribution and density of interface states strongly depend on the atomic density of silicon dioxide (SiO₂) layers and the interfacial roughness, respectively. All the observed interface state spectra possess peaked-structures, indicating that they are due to defect states. An interface state peak near the Si midgap is attributable to isolated Si dangling bonds at the interface, while those above and below the midgap to Si dangling bonds interacting weakly with Si or oxygen atoms in the SiO₂ layers. A method of the elimination of interface states and defect states in Si using cyanide solutions has been developed. The cyanide method simply involves the immersion of Si in KCN solutions. Due to the high Si-CN bond energy of ∼4.5 eV, the bonds are not ruptured at 800 °C and upon irradiation. The cyanide treatment results in the improvement of the electrical characteristics of MOS diodes and solar cells.