Broadband waveguide intersections with low cross talk in photonic crystal circuits

We propose a new mechanism for constructing waveguide intersections with broad bandwidth and low cross talk in photonic crystal (PC) circuits. The intersections are created by combination of coupled-cavity wave-guides (CCWs) with conventional line-defect waveguides. This mechanism utilizes the strong dependence of the defect coupling on the field pattern in the defects and the alignment of the defects (i.e., the coupling angle) in CCWs. By properly designing the defect mode, we demonstrate through numerical simulation the establishment of such a waveguide intersection in one of the most useful PCs, which is based on a two-dimensional triangular lattice of air holes made in a dielectric material. The transmission of a 500-fs pulse at ~1.3 microm is simulated by use of the finite-difference time-domain method, showing negligible distortion and low cross talk.     

Auger and secondary electrons excited by backscattered electrons; An approach to quantitative analysis

The contribution of backscattered electrons (BE) to Auger electrons (AE) and secondary electrons (SE) was studied by depositing Be onto a polycrystalline or deposited Cu substrate. The effects of backscattering on SE and maximum escape depth of SE were obtained by using the so called δ-η method. This method was also applied to the AE and the effects of BE on AE were experimentally evaluated. The AE yield versus primary energy curve which was corrected for BE was compared with other experiments and theories and considerably good agreement was obtained. From this analysis, the excitation efficiencies of AE by primary electrons and by BE could also be obtained. The absolute AE yield of Be (KVV) was estimated by “area” measurements. The changes of plasma losses, the elastic peaks, the energy distribution of BE, and the true SE were also observed as a function of deposited film thickness, and the results are discussed.     

Studies on halogen quenching through the Stern-Volmer plot (author's transl)

The quenching effect for halogenated benzenes, methanes and ethanes have been investigated. The halogen quenching was accurately measured using the internal conversion electrons emitted from 113Sn-113mIn. From the quenching constants determined by the Stern-Volmer plots with respect to various halogen quenchers, the following results have been obtained. (1) The quenching constants increase with the number of halogen substituents, so as linearly in halogenated benzenes and exponentially in halogenated methanes and ehtanes. Even the isomers of halogenides have different quenching constants. (2) There is a linearity between logarithm of the quenching constant and a polarographic half-wave reduction potential. (3) Electron excitation provides larger quenching constants than UV excitation for halogenated methames. Based on these results, the mechanism of halogen quenching have been discussed in connection with the exciplex formation.     

Precise fabrication of nanomaterials: a nonlinear dynamics approach

Modeling of the precise fabrication in the self-assembling of particles is studied using the nonlinear Langevin equation system. The numerical simulation showed a marked ordering of the particles as a function of time after some induction period. The abnormally enlarged fluctuation was found around the start of the evident ordering. After the fluctuation, a sudden increase of the cluster size was observed. The results corresponded well to the dynamics due to the formation of the critical cluster. The shape of the critical cluster around the enlarged fluctuation was not compact and showed fractal-like structures. The fluctuation of the cluster size around the formation of the critical cluster was explained by the anomalous fluctuation theorem for the generalized Langevin equation. The characterization of the stochastic dynamics of the critical clusters rationalized the concept of dynamic templating for the fabrication technique of the self-assembling of nanoparticles, that is, the structural constraint on the particle assembly by externally adding the resonance frequencies that match with the localized nonlinear vibrational modes of the target structures originating from thermal (Brownian) activation.     

Evidence for B0 --> D+ D- and observation of B- --> D0D- and B- -->D0D*- decays

We report evidence for B(0) --> D(0)D(-) and the first observation of the decay modes B(-) --> D(0)D(-) and B(-) --> D(0)D(*-) based on a sample of 152 x 10(6) BB events collected by the Belle detector at KEKB. The branching fractions for B(0) --> D(+) D(-), B--->D(0)D(-), and B--> D(0)D(*-) are found to be (1.91 +/- 0.51 +/- 0.30) x10(-4), (4.83 +/- 0.78 +/- 0.58) x 10(-4), and (4.57 +/- 0.71 +/- 0.56) x 10(-4), respectively. Charge asymmetries in the B---> D(0)D(-) and B(-) --> D(0)D(*-) channels are consistent with zero.     

Measurement of time-dependent CP-violating asymmetries in B0 --> K(s)0K(s)0K(s)0 decay

We present a measurement of CP-violation parameters in the B0 --> K(s)0K(s)0K(s)0 decay based on a sample of 275 x 10(6) BB pairs collected at the upsilon(4S) resonance with the Belle detector at the KEKB energy-asymmetric e+e- collider. One neutral B meson is fully reconstructed in the decay B0 --> K(s)0K(s)0K(s)0, and the flavor of the accompanying B meson is identified from its decay products. CP-violation parameters are obtained from the asymmetry in the distributions of the proper-time interval between the two B decays: S = +1.26 +/- 0.68(stat) +/- 0.20(syst) and [symbol: see text] = +0.54 +/- 0.34(stat) +/- 0.09(syst).     

Observation of the D1(2420)-->Dpi + pi- decays

We report on the first observation of D0/1(2420)-->D0pi- pi+ and D+/1(2420-->D+ pi- pi+ decays (where the contribution from the dominant known D1-->D*pi decay mode is excluded) in the B- -->D0/1pi-) and (-)B0-->D+/1pi- decays, respectively. The observation is based on 15.2 x 10(7) B(-)B events collected with the Belle detector at the KEKB collider. We also set 90% confidence level upper limits for the branching fractions of the four following decays: B- -->D0/1pi-, D01-->D(*0)pi- pi+, (-)B0-->D+/1pi-, D+/1-->D(*+) pi- pi+, B- -->D(*0)2(2460)pi-, D(*0)2 -->D(*0) pi- pi+, (-)B0-->D(*+)2(2460)pi-, D(*+)2-->D(*+)pi- pi+.