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121.
V. Ya. Eiderman 《Mathematical Notes》1995,57(1):110-112
Translated from Matematicheskie Zametki, Vol. 57, No. 1, pp. 150–153, January, 1995. 相似文献
122.
The influence of a large signal on the characteristics of a small signal near the frequency of the former is experimentally studied for the case of their simultaneous propagation through a resonant transmission line based on backward volume magnetostatic waves. The effects observed are caused by the excitation of spin waves in a ferromagnetic film at different large-signal frequencies and by the back influence of excited spin-wave packets on the amplitude and phase characteristics of the small signal. 相似文献
123.
V. G. Maiorov A. I. Nikolaev B. Ya. Zil’berman V. M. Shcherbakov 《Russian Journal of Applied Chemistry》2007,80(6):874-878
A scheme for utilization of chloride solutions of complex composition with α-and β-activity of up to 35 and 28 kBq 1?1, respectively, is suggested. 相似文献
124.
V. T. Bublik S. Yu. Matsnev K. D. Shcherbachev M. V. Mezhennyi M. G. Mil’vidskii V. Ya. Reznik 《Physics of the Solid State》2003,45(10):1918-1925
Diffuse x-ray scattering (DXS) is used to study the formation of microdefects (MDs) in heat-treated dislocation-free large-diameter silicon wafers with vacancies. The DXS method is shown to be efficient for investigating MDs in silicon single crystals. Specific defects, such as impurity clouds, are found to form in the silicon wafers during low-temperature annealing at 450°C. These defects are oxygen-rich regions in the solid solution with diffuse coherent interfaces. In the following stages of decomposition of the supersaturated solid solution, oxide precipitates form inside these regions and the impurity clouds disappear. As a result of the decomposition of the supersaturated solid solution of oxygen, interstitial MDs form in the silicon wafers during multistep heat treatment. These MDs lie in the {110} planes and have nonspherical displacement fields. The volume density and size of MDs forming in the silicon wafers at various stages of the decomposition are determined. 相似文献
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S. F. Dubinin V. E. Arkhipov Yu. G. Chukalkin S. G. Teploukhov V. D. Parkhomenko Ya. M. Mukovskiĭ 《Physics of the Solid State》2007,49(2):308-314
The magnetic structure and transport properties of partially disordered crystals of two-dimensional manganites La2?2x Sr1+2x Mn2O7 (x = 0.3, 0.4) are studied over a wide range of temperatures. The crystals are transformed into an atomically disordered state under irradiation with fast neutrons at a dose of 2 × 1019 cm?2. The average concentration of substitutional defects in the crystal is ≈4%. It is found that substitutional defects are responsible for the transition of these manganites from the ferromagnetic metal state to the insulator state with a spin glass structure. The results obtained are discussed in terms of the ratio between the kinetic energy of charge carriers and the exchange energy of localized spins. 相似文献
127.
The density of the vibrational states of an SiO2 melt under various PT conditions, the distributions of the Si-O-Si and O-Si-O angles in it, and its IR absorption spectra have been calculated by molecular dynamics with the use of a pairwise additive Born-Mayer potential. A comparison with the experimental data reveals that the ionic approximation selected is capable of basically reproducing the structural and spectroscopic properties of the melt, but the distributions of the bond angles are considerably broader than the experimentally determined distributions, and the absorption band caused by the stretching vibrations is not displayed in the calculated spectrum. The disparities indicated are apparently due to the isotropic nature of the potential of the interparticle interactions.V. I. Vernadskii Institute of Geochemistry and Analytical Chemistry, Academy of Sciences of the USSR, Moscow. Translated from Teoreticheskaya i Éksperimental'naya Khimiya, Vol. 27, No. 4, pp. 467–470, July–August, 1991. Original article submitted October 12, 1990. 相似文献
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