Origin of the 330 nm absorption band and effect of doping Yb in LiYF4 crystals

The electronic structures of LiYF₄ (YLF) crystals containing F color center (YLF-F) and Yb doped YLF crystals (Yb³⁺:YLF, Yb²⁺:YLF) are systematically studied within the framework of the density functional theory. The calculated results indicate that the 330 nm absorption band originates from the F center in YLF crystals. Thus the doping of Yb³⁺ can weaken the 330 nm absorption band by competing with F vacancies in capturing free electrons arising after γ-irradiation and change to Yb². By analyzing the lattice relaxation and the electronic structure of YLF containing Yb²⁺, we can reasonably believe that once Yb²⁺ is formed in YLF crystal, its compensating hole will turn out to be shared by two F⁻ nearest to Yb²⁺ forming a diatomic fluoride molecular ion () perturbed by Yb²⁺, or to say V_F color center. According to the molecular-orbital linear combination of atomic orbital (MO-LCAOs) theory, compared to the alkali halides, e.g. LiF, the in V_F center in LiYF₄ peaks at about 340 nm, which is in agreement with the experimental results.     

Algebraic Properties of the Path Ideal of a Tree

The path ideal (of length t ≥ 2) of a directed graph Γ is the monomial ideal, denoted I _t (Γ), whose generators correspond to the directed paths of length t in Γ. We study some of the algebraic properties of I _t (Γ) when Γ is a tree. We first show that I _t (Γ) is the facet ideal of a simplicial tree. As a consequence, the quotient ring R/I _t (Γ) is always sequentially Cohen–Macaulay, and the Betti numbers of R/I _t (Γ) do not depend upon the characteristic of the field. We study the case of the line graph in greater detail at the end of the article. We give an exact formula for the projective dimension of these ideals, and in some cases, we compute their arithmetical rank.     

Improved performance of TiO2 electrodes coated with NiO by magnetron sputtering for dye-sensitized solar cells

TiO₂ electrodes are coated with NiO by DC magnetron sputtering, and their structural, optical and electrochemical performance has been investigated. X-ray diffractometry (XRD), UV-vis spectrophotometry, scanning electron microscopy (SEM), AC impedance, and linear sweep voltammetry (LSV) are used to characterize the TiO₂/NiO electrodes. Their performance is evaluated with a computer controlled electrochemical workstation in combination with three conventional electrodes. The experimental results indicate that the surface modification of TiO₂ electrodes with sputtered NiO reduces trap sites on TiO₂ and improves the electrochemical performance of dye-sensitized solar cells (DSSCs). Sputtering NiO for 7 min, which is about 21 nm thick, on 6.5 μm thick TiO₂ greatly improves the DSSC parameters, and the conversion efficiency increases from 3.21 to 4.16%. Mechanisms of the influence of the NiO coating on electrochemical performance are discussed.     

Structure evolution and stoichiometry control of Pb(Zr, Ti)O3 thick films fabricated by electrospray assisted vapour deposition

Well-crystallized and stoichiometric Pb(Zr, Ti)O₃ (PZT) films, typically ∼5 μm thick, with pure perovskite-type rhombohedral structures have been successfully prepared via an electrospray assisted vapour deposition (ESAVD) method. Control of the deposition temperature within a narrow range of 300-400 °C resulted in films with the most desirable phases. PZT films with close stoichiometric match with the expected composition ratio and uniform element distribution were obtained by adding the appropriate levels of excess Pb in the precursor solutions. The annealed films were uniform, dense, compact and adherent to the substrates. The dielectric constant, ?_r, and loss tangent, tan δ, of the fabricated PZT films measured at 10 kHz were 442 and 0.09, respectively. The ESAVD deposited PZT films showed a remanent polarization, P_r, of 15.3 μC/cm² and coercive field, E_c, of 86.7 kV/cm. These results demonstrate the clear potential of the ESAVD method as a promising technique for the fabrication of thick PZT films.     

Enhanced dielectric properties of lead barium zirconate thin films by manganese doping

(Pb_0.5Ba_0.5)ZrO₃ (PBZ) and 1 mol% Mn-doped (Pb_0.5Ba_0.5)ZrO₃ (Mn-PBZ) sol were successfully fabricated, and corresponding thin films were deposited on Pt(1 1 1)/TiO₂/SiO₂/Si(1 0 0) substrates by spin-coating method. Effects of Mn doping on the microstructure and electrical properties of PBZ thin films were investigated systemically. X-ray diffraction patterns showed that both films had a polycrystalline perovskite structure, and that the degree of (1 1 1) orientation were increased by Mn doping. Dielectric measurements illustrated that Mn-doped PBZ thin films not only had a larger dielectric constant, but also possessed a smaller dielectric loss. Accordingly, the tunability and the figure of merit of PBZ films were improved by Mn doping.     

神龙一号电子束质心运动测量研究

 在强流直线感应加速器中,电子束质心位置的控制是一项重要技术,要达到较好的控制效果,前提是对电子束质心位置进行准确的测量和定位。针对具有时间分辨的电子束质心位置的测量和确定,介绍了测量实验系统的建立和数据处理两个方面的研究工作。该处理方法在实际应用时能够将电子束质心位置的误差控制在1～2个像素内。用高速分幅相机以10 ns的时间间隔、3 ns的曝光时间获得了神龙一号加速器在漂移段出口处的电子束质心运动情况。结果表明：束的质心主要在半径为0.5 mm的区域内运动,束斑直径dFWHM值分别为8.4,8.8,8.5,9.3和7.6 mm,测量结果可以为束的调控提供准确参数。     

第一讲中子散射与散裂中子源

中子散射是研究物质微观结构和动态的理想工具之一,广泛地应用于凝聚态物质研究和应用的众多学科领域.散裂中子源能是新一代的加速器基脉冲中子源,能为中子散射提供高通量的脉冲中子.文章简明地介绍了中子散射的特点和它作为物质结构和动态探针的优越性,以及散裂中子源的基本原理、发展状况和多学科的应用优势.我国计划建设的散裂中子源CSNS中,靶站将由多片钨靶、铍/铁反射体和铁/重混凝土生物屏蔽体组成.质子束功率100kW下,脉冲中子通量约为2.4×1016n/cm2/s.第一期将设计建造高通量粉末衍射仪、高分辨粉末衍射仪、小角散射仪、多功能反射仪和直接几何非弹性散射仪等五台典型的中子散射谱仪,以覆盖大部分的中子散射研究领域.     

高功率激光系统nm宽带激光脉冲传输特性

对高功率激光系统采用宽带激光消除菲涅耳衍射问题进行了研究,指出只有数百nm的宽带啁啾光脉冲才对近场衍射有一定的平滑作用,数nm的宽带啁啾光脉冲对近场衍射几乎没有平滑作用;同时,还对宽带啁啾光的B积分表征方式和最快增长频率问题进行了研究,并与原型装置上开展的窄带脉冲、宽带啁啾堆积脉冲的非线性实验结果进行了对比研究,指出以最大B积分或加权B积分反映非线性自聚焦更为准确。研究还表明,在数nm,ns情况下最快增长频率与窄带激光脉冲的差别不大。     

355 nm脉冲激光在甲烷中的高效多波长拉曼转换

 研究了脉冲Nd:YAG激光（355 nm）泵浦的甲烷中多级Stokes光的产生和惰性气体对其转换效率的影响,其中一级和二级Stokes光的最大能量转换效率分别可达71%和38%（对应量子效率为79%和48%）,大大高于已往文献报道的20%。在0.5 MPa下,可同时获得322 nm（3.6%）,355 nm（24.5%）,396 nm（24.3%）,448 nm（22.3%）和515 nm（9.3%）的多波长输出。甲烷压力对多级Stokes转换有显著影响：高气压利于产生高效的一级Stokes光,而低气压则适合于高级Stokes光的产生。根据级联受激拉曼散射(SRS)和四波混频(FWM)理论对实验结果进行了分析,结果表明甲烷中高级Stokes光的产生是SRS和FWM协同作用的结果。加入的氦气增强了甲烷中Stokes光的转换效率,而氩气的作用恰恰相反,利用热透镜效应可以很好地解释这些现象。     

固体材料激光冷却的实验研究及其最新进展

近年来，基于反斯托克斯荧光制冷(Anti—Stokes Fluorescent Cooling)的固体材料激光冷却技术得到了快速发展。本文首先简单介绍了固体材料激光冷却的基本原理及其技术；其次，详细介绍了各种固体激光冷却的新材料、新方案和新结果及其最新实验进展；最后，就固体激光冷却技术的应用前景及其未来发展方向等问题进行了简单讨论与展望。