Device research on GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistors grown by metal organic chemical vapour deposition

This paper applies a novel quad-layer resist and e-beam lithography technique to fabricate a GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistor (HEMT) grown by metal organic chemical vapour deposition (MOCVD). The gate length of the metamorphic HEMT was 150~nm, the maximum current density was 330~mA/mm, the maximum transconductance was 470~mS/mm, the threshold voltage was -0.6~V, and the maximum current gain cut-off frequency and maximum oscillation frequency were 102~GHz and 450~GHz, respectively. This is the first report on tri-termination devices whose frequency value is above 400~GHz in China. The excellent frequency performances promise the possibility of metamorphic HEMTs grown by MOCVD for millimetre-wave applications, and more outstanding device performances would be obtained after optimizing the material structure, the elaborate T-gate and other device processes further.     

退火对B掺杂纳米金刚石薄膜微结构和电化学性能的影响

采用热丝化学气相沉积法制备B掺杂纳米金刚石薄膜,并对薄膜进行真空退火处理,系统研究了不同退火温度对B掺杂纳米金刚石薄膜的微结构和电化学性能的影响.结果表明,当退火温度升高到800 ℃后,薄膜的Raman谱图中由未退火时在1157,1346,1470,1555 cm^-1处的4个峰转变为只有D峰和G峰,说明晶界上的氢大量解吸附量减少,并且D峰和G峰的积分强度比I_D/I_G值变为最小,即sp²相团簇     

Mdm2生成速率调控的p53-Mdm2振子的全局动力学和稳定性

肿瘤抑制蛋白p53的动力学在一定程度上可以决定DNA损伤后的细胞命运.p53的动力学行为与p53信号通路中p53-Mdm2振子模块密切相关.然而,p53的负调控子Mdm2的生成速率的增加使其在一些癌细胞中过表达.因此探讨Mdm2生成速率对p53动力学的影响有重要意义.同时,PDCD5作为p53的激活子也调控p53的表达.因此,本文针对PDCD5调控的p53-Mdm2振子模型,通过分岔分析获得了Mdm2生成速率所调控的p53的单稳态、振荡以及单稳态与振荡共存的动力学行为,且稳定性通过能量面进行了分析.此外,噪声强度对p53动力学的稳定性有重要的影响.因此,针对p53的振荡行为,探讨了噪声强度对势垒高度和周期的影响.本文所获得的结果对理解DNA损伤后的p53信号通路调控起到一定的指导作用.     

基于垂直引线和调制电流的三线环形磁导引

提出了一种在单层原子芯片上实现闭合且导引中心无磁场零点的环形磁导引的新方案. 芯片表面刻蚀的导线结构由同心等距三环线构成, 三环线的电流引线垂直于芯片表面. 加载直流电流后, 这种构型即可在芯片表面附近产生闭合的环形磁导引. 交流调制三环线电流后, 环形磁导引的势能极小值附近不再存在磁场零点且其磁场起伏小. 这种方案可用于基于物质波干涉的原子芯片陀螺仪研究.     

高功率梯度掺杂增益光纤温度特性理论研究

在高功率光纤激光器中, 增益光纤的热效应是限制激光功率进一步提高的重要因素之一. 为了降低增益光纤的最高温度, 提出了一种通过改变增益光纤的掺杂浓度分布, 分散光纤激光的热效应, 从而提高激光输出功率的方法. 基于速率方程模型和热传导模型, 在光纤激光放大器输出功率大致相当的情况下, 对几种不同掺杂方式下增益光纤中的热分布和放大器的输出功率进行了数值模拟. 研究结果表明: 增益光纤的梯度掺杂可以优化光纤中的温度分布并提高光纤熔接点的稳定性; 同时兼具提高输出光束的光束质量、抑制光纤中非线性效应和模式不稳定的效果, 是提高光纤激光放大器输出功率切实可行的办法. 研究结果可以为高功率光纤激光器中增益光纤的设计提供一定的参考.     

脉冲作用下Chen系统的非光滑分岔分析

研究了脉冲作用下Chen系统的复杂动力学行为. 对脉冲作用下的Chen系统进行了非光滑分岔分析. 该系统可经级联倍周期分岔到达混沌, 也可由周期解经鞍结分岔直接到达混沌. 最后通过Floquet理论揭示了该系统周期解的非光滑分岔机理.     

一维指数形变截面有限周期声子晶体的研究

本文利用集中质量法对弹性纵波在一维指数形截面有限周期声子晶体中的传播进行了研究, 得到了频率响应函数的表达式. 与一维等截面的声子晶体相比, 指数形变截面声子晶体带隙内的衰减值随着输出端截面积的增大而减小, 同时带隙的起始频率降低而截止频率升高, 也即带隙的宽度会得到拓展. 晶格常数和材料组份比变化时, 变截面声子晶体带隙的起始频率和截止频率的变化趋势与等截面时的声子晶体相同. 希望本文的研究能够推动声子晶体在减振降噪等领域中的应用.     

Two-grid methods for finite volume element approximations of nonlinear parabolic equations

Two-grid methods are studied for solving a two dimensional nonlinear parabolic equation using finite volume element method. The methods are based on one coarse-grid space and one fine-grid space. The nonsymmetric and nonlinear iterations are only executed on the coarse grid and the fine-grid solution can be obtained in a single symmetric and linear step. It is proved that the coarse grid can be much coarser than the fine grid. The two-grid methods achieve asymptotically optimal approximation as long as the mesh sizes satisfy h=O(H³|lnH|)$h=O\left(H^3|lnH|\right)$. As a result, solving such a large class of nonlinear parabolic equations will not be much more difficult than solving one single linearized equation.     

单模光纤激光极限功率的数值研究

对光纤激光极限功率的探索和其受限因素的分析, 有利于为大功率光纤激光器的发展提供理论依据和实验指导. 本文考虑热效应、光效应、非线性效应和抽运亮度等因素对光纤激光极限功率的影响, 分析了掺镱和掺铥光纤的极限功率和受限因素. 在此基础上, 结合激光在光纤中单模传输的条件, 计算了单模掺镱和掺铥光纤激光的极限功率. 计算结果表明, 在现有技术条件下, 使用常规的976 nm和793 nm激光二极管抽运, 单模掺镱和掺铥光纤激光的极限功率分别为4.2 kW和7.8 kW, 其中单模掺铥光纤激光的功率水平还远低于它的极限功率的原因是受抽运亮度的限制. 最后分析指出减小纤芯的数值孔径和改进少模光束的光束质量是提升单模光纤激光极限功率的重要途径.     

A study of GaN MOSFETs with atomic-layer-deposited Al2O3 as the gate dielectric

Accumulation-type GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) with atomic-layer-deposited Al₂O₃ gate dielectrics are fabricated. The device, with atomic-layer-deposited Al₂O₃ as the gate dielectric, presents a drain current of 260 mA/mm and a broad maximum transconductance of 34 mS/mm, which are better than those reported previously with Al₂O₃ as the gate dielectric. Furthermore, the device shows negligible current collapse in a wide range of bias voltages, owing to the effective passivation of the GaN surface by the Al₂O₃ film. The gate drain breakdown voltage is found to be about 59.5 V, and in addition the channel mobility of the n-GaN layer is about 380 cm²/Vs, which is consistent with the Hall result, and it is not degraded by atomic-layer-deposition Al₂O₃ growth and device fabrication.