纳米多晶铜中冲击波阵面的分子动力学研究

冲击波阵面反映材料在冲击压缩下的弹塑性变形行为以及屈服强度、应变率条件等宏观量, 还与冲击压缩后的强度变化联系. 本文使用分子动力学方法, 模拟研究了冲击压缩下纳米多晶铜中的动态塑性变形过程, 考察了冲击波阵面和弹塑性机理对晶界存在的依赖, 并与纳米多晶铝的冲击压缩进行了比较. 研究发现: 相比晶界对纳米多晶铝的贡献而言, 纳米多晶铜中晶界对冲击波阵面宽度的影响较小; 并且其塑性变形机理主要以不全位错的发射和传播为主, 很少观察到全位错和形变孪晶的出现. 模拟还发现纳米多晶铜的冲击波阵面宽度随着冲击应力的增加而减小, 并得到了冲击波阵面宽度与冲击应力之间的定量反比关系, 该定量关系与他人纳米多晶铜模拟结果相近, 而与粗晶铜的冲击压缩实验结果相差较大.     

Nin(n=1-9)小团簇的密度泛函理论研究

采用密度泛函理论(DFT)方法对Nin(n=1-9)团簇的结构, 稳定性和磁性进行了详细的研究. 得到了一些以前文献中没有提到的稳定结构, 并与其它方法得到的结构进行了比较, 得到的最稳定结构与实验结果相一致. 团簇能量的二阶差分、分裂能、HOMO-LUMO能隙随团簇尺寸的演化都没有表现出明显的奇偶振荡行为, 但在n=5、7时均有较大的值, 说明相对应的团簇具有较高的稳定性、较低的化学活性. 团簇磁性的研究表明团簇的平均每原子磁矩随团簇尺寸的增加有一定振荡, 但有逐渐减小的趋势, n≥5时团簇的构型对团簇磁性的影响较小.     

石墨和纳米碳中缺陷和电子密度随温度的变化

测量了石墨和纳米碳在不同温度下的正电子寿命谱,研究了石墨和纳米碳中缺陷和电子密度随温度的变化.结果表明,纳米碳中缺陷的开空间和缺陷浓度分别大于和高于石墨晶体;纳米碳的平均自由电子密度低于石墨晶体.当温度从25K升至295K时,石墨和纳米碳中的平均自由电子密度随温度的升高而下降:石墨晶体中的自由电子密度随温度的升高变化较小;纳米碳的自由电子密度随温度的升高变化较大.随着温度的升高,石墨和纳米碳中的热空位数量增多,而且这些空位可迁移至微孔洞的内表面使微孔洞的开空间增大.     

一维光学格子孤子的传输特性及控制研究

利用解析和数值方法研究了在具有横向折射率周期性调制的克尔型非线性介质中光学格子孤子的传输，得到了孤子参数的演化方程以及格子孤子的形成和稳定传输的条件.结果表明：当光束的入射角小于某临界角度时，光束可被类似波导形式的路径俘获而稳定传输，该临界角随折射率调制周期、调制深度的增加而增大，且光束越窄临界值越大.此外，线性空间啁啾虽然对光束传输的中心位置没有任何影响，但会导致光束发散从而破坏格子孤子的形成和稳定传输，对此提出了采用特定功率取值来补偿啁啾作用从而形成格子孤子的方案. 关键词： 光孤子 光学格子 光传输 矩方法     

虚拟RLC电参量测试仪

虚拟仪器在测试测量领域、自动控制和工业控制领域有着广泛的应用.为提高本科生普通物理实验训练的起点,北京大学基础物理实验中心将虚拟仪器引入到物理实验教学中.本文以虚拟RLC电参量的测量为例,介绍了虚拟仪器在物理实验中的具体应用.     

Populations of coupled electrochemical oscillators

Experiments were carried out on arrays of chaotic electrochemical oscillators to which global coupling, periodic forcing, and feedback were applied. The global coupling converts a very weakly coupled set of chaotic oscillators to a synchronized state with sufficiently large values of coupling strength; at intermediate values both intermittent and stable chaotic cluster states occur. Cluster formation and synchronization were also obtained by applying feedback and forcing to a moderately coupled base state. The three cases differ, however, in other details. The feedback and forcing also produce periodic cluster states and more than two clusters. Configurations of two (chaotic) clusters and two, three, or four (periodic) clusters were observed. (c) 2002 American Institute of Physics.     

A discrete KdV equation hierarchy: continuous limit,diverse exact solutions and their asymptotic state analysis

In this paper, a discrete KdV equation that is related to the famous continuous KdV equation is studied. First, an integrable discrete KdV hierarchy is constructed, from which several new discrete KdV equations are obtained. Second, we correspond the first several discrete equations of this hierarchy to the continuous KdV equation through the continuous limit. Third, the generalized (m, 2N − m)-fold Darboux transformation of the discrete KdV equation is established based on its known Lax pair. Finally, the diverse exact solutions including soliton solutions, rational solutions and mixed solutions on non-zero seed background are obtained by applying the resulting Darboux transformation, and their asymptotic states and physical properties such as amplitude, velocity, phase and energy are analyzed. At the same time, some soliton solutions are numerically simulated to show their dynamic behaviors. The properties and results obtained in this paper may be helpful to understand some physical phenomena described by KdV equations.     

The unique carrier mobility of Janus MoSSe/GaN heterostructures

Heterostructure is an effective approach in modulating the physical and chemical behavior of materials. Here, the first-principles calculations were carried out to explore the structural, electronic, and carrier mobility properties of Janus MoSSe/GaN heterostructures. This heterostructure exhibits a superior high carrier mobility of 281.28 cm²·V⁻¹·s⁻¹ for electron carrier and 3951.2 cm²·V⁻¹·s⁻¹ for hole carrier. Particularly, the magnitude of the carrier mobility can be further tuned by Janus structure and stacking modes of the heterostructure. It is revealed that the equivalent mass and elastic moduli strongly affect the carrier mobility of the heterostructure, while the deformation potential contributes to the different carrier mobility for electron and hole of the heterostructure. These results suggest that the Janus MoSSe/GaN heterostructures have many potential applications for the unique carrier mobility.     

新体制引信干扰机理分析

为应对新体制无线电引信带来的威胁,从引信对抗角度以超宽带无线电引信为研究对象,研究干扰作用下其失效机理。揭示了超宽带无线电引信敏感干扰波形响应机理,理论推导了周期调制干扰信号作用下引信响应特性,仿真计算了在射频噪声、正弦波调幅、正弦波调频以及扫频正弦波调幅干扰信号作用下超宽带引信接收机相关器输出响应特性。以干信比增益为表征参量,通过理论计算、仿真及试验验证得出结论：周期类调制干扰中调幅类干扰对超宽带引信干扰效果最好。