同位旋非对称核物质性质与扩展的BHF方法(Ⅲ)HVH定理与费米能量

在扩展的同位旋相关的Brueckner-Hartree-Fock理论框架内,在整个同位旋自由度范围内研究了质量算子的空穴线展开中不同等级近似下非对称核物质中Hugenholtz-Van Hove定理的满足程度,并计算了中子和质子的费米能量.结果表明为了使Hugenholtz-Van Hove定理达到令人满意的满足程度,需要同时考虑质量算子中的重排贡献和重正修正,从而指出了基态关联对于非对称核物质中单粒子性质的重要性.     

Excited-state dynamics in Yb3+-Ho3+-doped fluoroindate glasses

This work has been partially supported by Gobierno Autonomo de Canarias under contact number 226–265/93.     

Darstellung und Molekülstrukturen von oligofunktionalen Dirheniumcarbonylderivaten aus Dirheniumnonacarbonylphosphan

Preparation and Molecular Structures of Oligofunctional Dirhenium Carbonyl Derivatives from Dirhenium Nonacarbonylphosphane Starting with dirheniumdecacarbonyl, one CO-Ligand was eliminated oxidatively and substituted by the labile acetonitrile ligand. As an intermediate eq-Re₂(CO)₉NCCH₃ was received. The reaction of this labilised carbonyl with tris(trimethylsilyl)phosphine and subsequent methanolysis gave ax-Re₂(CO)₉PH₃, which was isolated and characterized for the first time. Photochemical and thermal reaction of ax-Re₂(CO)₉PH₃ led to the new bi- and trinuclear complexes Re₂(μ-H)(μ₃-PHRe(CO)₅)(CO)₈, Re₂(μ-PH₂)₂(CO)₈ and Re₂(μ-H) · (μ-PH₂)(CO)₈, which were characterized by IR-, ¹H- and ³¹P-NMR spectroscopy. The structures of ax-Re₂(CO)₉PH₃, Re₂(μ-H)(μ₃-PHRe(CO)₅)(CO)₈ and Re₂(μ-PH₂)₂(CO)₈ were confirmed by single-crystal X-ray analysis. ax-Re₂(CO)₉PH₃ has a very short Re? P bond length of 228(2) pm.     

Application of enzyme-field effect transistor sensor arrays as detectors in a flow-injection analysis system for simultaneous monitoring of medium components. Part II. Monitoring of cultivation processes

Glucose, maltose, sucrose, lactose, ethanol and urea concentrations were monitored simultaneously during the cultivation of Escherichia coli and Saccharomyces cerevisiae by means of enzyme field effect transistors (EnFETs) applying glucose dehydrogenase (GDH), maltase (MAL)/GDH, invertase (INV)/GDH, β-galactosidase (β-GAL)/galactosedehydrogenase (GALDH), alcoholdehydrogenase (ADH)/aldehydedehydrogenase (ALDH), and urease. These enzymes were (co)immobilized on the pH sensitive gates of an eight-FET array. The FET array was integrated in a commercial FIA system.     

Siderophore Transport in Mycobacteria Analyzed by Mössbauer Spectroscopy: Possible Routes to Novel Antibiotics against These Organisms?

Iron uptake of the ⁵⁷Fe-siderophores ferricrocin, rhizoferrin and citrate in M. smegmatis was analyzed by in situ Mössbauer spectroscopy. Siderophore dependent uptake and metabolic utilization patterns of ⁵⁷Fe were found. Rhizoferrin is accumulated in the organism and, therefore, represents a suitable candidate for the synthesis of novel siderophore-antibiotics conjugates.     

Induced smectic C* phases

Induced ferroelectric S*_C phases are formed by non-chiral S_C host phases doped with chiral dipolar guest molecules. In those mixtures the spontaneous polarization P_s and the tilt angle Θ has been investigated as a function of the mole fraction x_G of the chiral dopant. In most cases the reduced polarization P₀ = P_S/ sin Θ has been found to depend linearly on x_G. The polarization power which is defined by δ_P=(∂P₀/∂x_G)ΔT is discussed in terms of the molecular structure of the chiral dopants. There are systems in which P₀(x_G) deviates positively from linearity. This behaviour can be understood by considering a local field correction to P₀. By assuming a local field of Lorentz type a theoretical relation for P₀(x_G) has been derived which explains the experimental results. The effect of a local field is considerable if the transverse dipole moment and the polarizability of the chiral dopant are large.     

MITATT mode in DDR heterostructure Impatt

Large signal characterisation of double heterostructure DDR Impatt diode has been carried out in the millimeter-wave range considering the MITATT mode of operation. The structure of the device is p⁺-p₂-p₁-n₁-n₂-n⁺ where impact ionisation and tunneling takes place in the p₁-n₁ region. In this study we have considered two well-known heterostructures, e.g., InP/GaInAs/InP and InP/InGaAsP/InP and one nonconventional structure GaAs/InP/GaAs. The theoretical results of the performances of these devices as regards of output power, efficiency, and negative conductance revealed that the structures are quite promising as the source of power in the millimeter-wave range. The analysis may be used for other mm wave DDR heterostructure Impatts.