Non-local symmetries of first-order equations

It is shown how one can transform scalar first-order ordinarydifferential equations which admit non-local symmetries of theexponential type to integrable equations admitting canonicalexponential non-local symmetries. As examples we invoke theAbel equation of the second kind, the Riccati equation and naturalgeneralizations of these. Moreover, our method describes howa double reduction of order for a second-order ordinary differentialequation which admits a two-dimensional Lie algebra of generatorsof point symmetries can be affected if the second-order equationis first reduced in order once by a symmetry which does notspan an ideal of the two-dimensional Lie algebra.     

Electron-stimulated nitridation of Si(100) in pure ammonia

We present the results of an AES study of the Si(100) electron-stimulated nitridation at RT by ammonia gas. The influence of the gas pressure and electron beam density on the nitridation rate have been determined within the ranges 10⁻⁶–10⁻⁹ Torr and 5 × 10⁻³–5 × 10⁻² A/cm², respectively. The silicon nitride growth rate has been found to be proportional to the electron flux and is enhanced with increased ammonia pressure in the range 10⁻⁹–10⁻⁷ Torr. Beyond 10⁻⁷ Torr the Si nitride growth rate is constant and independent of ammonia pressure. A phenomenological model of electron-stimulated nitridation process is suggested, which is in good agreement with the experimental data. The rate of electron-stimulated nitridation has been deduced.     

Growth of Au thin film on Cu-modified Si(1 1 1) surface

Miniaturizing of electronic devices requires that conductive elements maintain advanced electrical characteristics upon reducing their geometrical sizes. For gold, which is valued for its high electrical conductivity and stability against ambient conditions, creation of extra-thin films on silicon is hampered by formation of the quite complex Au/Si interface. In the present work, by forming a Si(1 1 1)5.55 × 5.55-Cu surface reconstruction prior to Au deposition we formed Au films with smoother surface morphology and higher surface conductivity compared to Au film grown on a pristine Si(1 1 1)7 × 7 surface. Scanning tunnelling microscopy and four-point probe measurements were used to characterize the growth mode of the Au film on a Si(1 1 1)5.55 × 5.55-Cu reconstruction at room temperature.     

Electro-elastic interactions and second order anisotropic constitutive equations

Piezoelectricity is usually expressed as an interaction between mechanical and electrical variables. The physics involved is hence governed by a coupling between Maxwell's equations of electromagnetism and the equations of elasticity. Such a coupling takes us through the piezoelectric constitutive relations. In this work, the second order anisotropic constitutive equations are treated, and in particular, the number of independent material constants is computed for all the 32 crystallographic classes.Paper presented, in reduced version, at the 12th Italian National Congress of Theoretical and Applied Mechanics (AIMETA '95), October 1995, Naples, Italy.     

Electron irradiation effect on the surface composition of Ar+ ion bombarded Si-nitride and Si-oxinitride

Auger electron spectroscopy (AES) and electron energy loss spectroscopy (ELS) have been used to study the surface composition of the Si-nitride and Si-oxinitride prepared by low pressure chemical vapor deposition. Ion bombardment has been shown to result in appearance of the “free” silicon on the surface. Electron irradiation of the samples preliminary bombarded by Ar⁺ ions has led to disappearance of the “free” silicon. This process is assumed to be connected with electron stimulated desorption of the “free” silicon.