Boundary value problems on planar graphs and flat surfaces with integer cone singularities, II: The mixed Dirichlet-Neumann problem

In this paper we continue the study started in Hersonsky (in press) [16]. We consider a planar, bounded, m-connected region Ω, and let ∂Ω be its boundary. Let T be a cellular decomposition of Ω∪∂Ω, where each 2-cell is either a triangle or a quadrilateral. From these data and a conductance function we construct a canonical pair (S,f) where S is a special type of a (possibly immersed) genus (m−1)singular flat surface, tiled by rectangles and f is an energy preserving mapping from T(1) onto S. In Hersonsky (in press) [16] the solution of a Dirichlet problem defined on T(0) was utilized, in this paper we employ the solution of a mixed Dirichlet-Neumann problem.     

重离子碰撞中K介子和π介子产生的统一动力学模拟

用RVUU模型统一地研究了重离子碰撞中产生的K介子和π介子的动力学过程.考虑了K产生和输运过程的介质效应,同时,计入了π在核物质中的传播.用它模拟了每核子1GeV入射能量的重离子碰撞中π产生和阈下K产生过程.讨论了核介质效应对π末态性质的影响,以及对K末态性质的联带影响.计算结果表明,吸引的π光学势,影响了末态π动量分布,使横动量分布中具有小动量的π产额增大,同时明显增大了K的产额,改变了K的动量分布.这说明要合理地评价重离子碰撞的探测信息,需要统一地研究K和π的这些末态动力学作用.     

Comparative study of the forward and backward methods for calculating jet properties in pp collisions at s~(1/2)=7 TeV

We propose a forward method based on PYTHIA6.4 to study the jet properties in ultra-relativistic pp collisions.In the forward method,the partonic initial states are first generated with PYTHIA6.4 and then hadronized in the Lund string fragmentation model,and finally the hadronic jets are constructed from the created hadrons.Jet properties calculated with the forward method for pp collisions at √s=7 TeV are comparable to those calculated with the usual anti-kt algorithm(backward method)in PYTHIA6.4.The comparison between the backward and forward methods may contribute to the understanding of the partonic origin of jets in the backward method.     

Structural and optical properties of an InxGa1−xN/GaN nanostructure

The structural and optical properties of an In_xGa_1−xN/GaN multi-quantum well (MQW) were investigated by using X-ray diffraction (XRD), atomic force microscopy (AFM), spectroscopic ellipsometry (SE) and photoluminescence (PL). The MQW structure was grown on c-plane (0 0 0 1)-faced sapphire substrates in a low pressure metalorganic chemical vapor deposition (MOCVD) reactor. The room temperature photoluminescence spectrum exhibited a blue emission at 2.84 eV and a much weaker and broader yellow emission band with a maximum at about 2.30 eV. In addition, the optical gaps and the In concentration of the structure were estimated by direct interpretation of the pseudo-dielectric function spectrum. It was found that the crystal quality of the InGaN epilayer is strongly related with the Si doped GaN layer grown at a high temperature of 1090 °C. The experimental results show that the growth MQW on the high-temperature (HT) GaN buffer layer on the GaN nucleation layer (NL) can be designated as a method that provides a high performance InGaN blue light-emitting diode (LED) structure.     

具有HfN/HfO2栅结构的p型MOSFET中的负偏置-温度不稳定性研究

研究了HfN/HfO2高K栅结构p型金属-氧化物-半导体(MOS)晶体管(MOSFET)中,负偏置-温度应力引起的阈值电压不稳定性(NBTI)特征.HfN/HfO2高K栅结构的等效氧化层厚度(EOT)为1.3nm,内含原生缺陷密度较低.研究表明,由于所制备的HfN/HfO2高K栅结构具有低的原生缺陷密度,因此在p-MOSFET器件中观察到的NBTI属HfN/HfO2高K栅结构的本征特征,而非工艺缺陷引起的;进一步研究表明,该HfN/HfO2高K栅结构中观察到的NBTI与传统的SiO2基栅介质p-MOSFET器件中观察到的NBTI具有类似的特征,可以被所谓的反应-扩散(R-D)模型表征: HfN/HfO2栅结构p-MOSFET器件的NBTI效应的起源可以归为衬底注入空穴诱导的界面反应机理,即在负偏置和温度应力作用下,从Si衬底注入的空穴诱导了Si衬底界面Si-H键断裂这一化学反应的发生,并由此产生了Si+陷阱在Si衬底界面的积累和H原子在介质层内部的扩散,这种Si+陷阱的界面积累和H原子的扩散导致了器件NBTI效应的发生.     

Coriolis intensity perturbations in the SO2 molecule: Experimental determination of the relative signs of (∂μ∂Qi)

The Coriolis interactions between ν₁ and ν₃, and between ν₂ and ν₃ in SO₂ have been analyzed to obtain the signs of the products $\text{ζ}{}_{3.1}{}^{\mathrm{c}}\text{(}\text{?μ}{}^{\mathrm{a}}\text{?Q}{}_3\text{)(}\text{?μ}{}^{\mathrm{b}}\text{?Q}{}_1\text{)}$ and $\text{ζ}{}_{3.2}{}^{\mathrm{c}}\text{(}\text{?μ}{}^{\mathrm{a}}\text{?Q}{}_3\text{)(}\text{?μ}{}^{\mathrm{b}}\text{?Q}{}_2\text{)}$. It has been found that both of the signs of these products are positive. Then, relative signs of ($\text{?μ}\text{?Q}{}_1$) have been determined using the calculated values of the Coriolis zeta constants for the present definition of the normal coordinates. The obtained sign combination of ($\text{?μ}\text{?Q}{}_{\mathrm{i}}$) is ±(+?+), which agrees with the one predicted by the molecular orbital calculations. Using the sign combination (+?+), the polar tensors of S and O atoms were also calculated.     

Asymptotic profiles of solutions to convection–diffusion equations

The large time behavior of zero-mass solutions to the Cauchy problem for the convection–diffusion equation $\text{u}{}_{\mathrm{t}}\text{?u}{}_{\mathrm{xx}}\text{+(|u|}{}^{\mathrm{q}}\text{)}{}_{\mathrm{x}}\text{=0,}\text{u(x,0)=u}{}_0\text{(x)}$ is studied when q>1 and the initial datum u₀ belongs to $\text{L}{}^1\text{(}\text{R}\text{,(1+|x|)}\text{d}\text{x)}$ and satisfies $\text{∫}{}_{\mathrm{<mtext>R</mtext>}}\text{u}{}_0\text{(x)}\text{d}\text{x=0}$. We provide conditions on the size and shape of the initial datum u₀ as well as on the exponent q>1 such that the large time asymptotics of solutions is given either by the derivative of the Gauss–Weierstrass kernel, or by a self-similar solution of the equation, or by hyperbolic N-waves. To cite this article: S. Benachour et al., C. R. Acad. Sci. Paris, Ser. I 338 (2004).     

Determination of Thermal Parameters of Vanadium Oxide Uncooled Microbolometer Infrared Detector

Vanadium oxide thin films are the potential candidates for uncooled microbolometers due to their high temperature coefficient of resistance (TCR) at room temperature. A 2D array of 10-element test microbolometer without air-gap thermal isolation structure was fabricated with pulsed laser deposited vanadium oxide as IR sensing layer for the first time. Infrared responsivity of the uncooled microbolometer was evaluated in the spectral region 8-15 m. The device exhibits responsivity of about 12 V/W at 30 Hz chopper frequency for 20 A bias current. Thermal time constant (), Thermal conductance (G) and thermal capacitance (C) are the thermal parameters characterize the performance of the uncooled microbolometer infrared detectors are determined as 15 ms, 10^-3 W/K and 3.5 × 10^-5 J/K respectively. The influence of the thermal parameters on the performance of the microbolometer is discussed.     

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