Optical characteristics of transparent PMNT ceramic and its application at high speed electro-optic switch

The optical characteristics of transparent lead magnesium niobate titanate (PMNT) electro-optic ceramic, including the electro-optic phase modulation, electric hysteresis property and thermo-optic coefficient, are investigated in detail. Based on this novel ceramic, a polarization independent electro-optic switch by using fiber Sagnac interferometer (FSI) structure is realized. An initial π-shift is introduced into the Sagnac loop to eliminate the effect of the polarization orientation of the incident light on the switch performance. Then an electrically controllable PMNT phase retarder is used to switch the optical signal between the reflection and transmission ports. Some theoretical analyses are given and the switch performances are also discussed, including the thermal characteristic and different switching frequency response.     

Knockout reaction mechanism studied by 6He projectile

Knockout reaction experiment was carried out by using the ⁶He beams at 61.2 MeV/u impinging on a CH₂ target. The α core fragments at forward angles were detected in coincidence with the recoiled protons at larger angles. From this exclusive measurement the valence nucleon knockout mechanism and the core knockout mechanism can be distinguished by the relation between the polar angles of the core fragments and the recoiled protons, respectively. It is demonstrated that the core knockout mechanism may result in some strong contamination to the real invariant mass spectrum.

     

激光光解自由基的TR-ESR研究

时间分辨电子自旋共振（TR-ESR）技术是探测和鉴定光化学反应过程中顺磁性中间体的强有力工具,利用TR-ESR技术观察到的化学诱导动态电子极化 (CIDEP) 可以为我们提供丰富的光化学反应机理、反应动力学等信息. 该文较为详细地介绍了CIDEP的4种机理和自行研制的一种零差拍平衡混频的时间分辨ESR波谱仪,总结了TR-ESR技术在光解自由基反应方面的应用.     

A novel method for improving the adhesion strength of the electrodeposited Ni films in MEMS

Adhesion performance of MEMS materials is increasingly important with the widely use of miniaturized devices. This paper proposed a novel method for improving adhesion performance between electrodeposited Ni multi-layers. The new method is to treat the Ni substrate in nickel chloride plating solution by pulse reverse current technique before electrodeposition. The dense oxide film of Ni substrate can be removed effectively by this electrochemical method, meanwhile, the proper roughness of Ni substrate is in favor of epitaxial growth during electrodeposition. Moreover, the Ni film is electrodeposited by the new method with low stress and coarse crystal grain. Consequently, the adhesion performance of Ni films is improved dramatically. The experimental results show that the adhesion performance of Ni film electrodeposited by the new method is about 3 times that of by traditional method.     

石墨烯基双曲色散特异材料的负折射与体等离子体性质

基于有效介质理论研究了石墨烯/介质周期结构的电磁性质, 研究发现这种复合结构的等频面在太赫兹和远红外波段为双曲线, 可用来实现石墨烯基双曲色散特异材料. 通过改变石墨烯的费米能级、介质层厚度和单元结构中石墨烯的层数, 可很容易地调节双曲色散存在的频段. 由于等频面的双曲色散特性, 石墨烯基双曲色散特异材料在远低于截止频率的范围内, 对斜入射的电磁波具有负的能量折射率和正的相位折射率, 并支持局域体等离子体模式. 基于衰减全反射结构, 研究了体等离子体的激发, 探索了体等离子体在可调的光学反射调制器中的应用.     

Characteristics and properties of metal aluminum thin film prepared by electron cyclotron resonance plasma-assisted atomic layer deposition technology

Metal aluminum (Al) thin films are prepared by 2450-MHz electron cyclotron resonance plasma-assisted atomic layer deposition on glass and p-Si substrates using trimethylaluminum as the precursor and hydrogen as the reductive gas. We focus our attention on the plasma source for thin-film preparation and annealing of as-deposited films related to the surface square resistivity. The square resistivity of as-deposited Al film is greatly reduced after annealing and almost reaches the value of bulk metal. Through chemical and structure analysis we conclude that the square resistivity is determined by neither contaminant concentration nor surface morphology, but by both crystallinity and crystal size in this process.     

Fluctuation of Quantum Information Density in Curved Time-Space

A dynamical equation for quantum information density （QID） in curved spacetime is presented. The related fluctuation of QID with quantum Einstein equation is also discussed, which reveals the measuring of the dynamical mutual information condition using a Gaussian quantum channel.     

Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

The effects of Si doping on the structural and electrical properties of Ge₂Sb₂Te₅ film are studied in detail. Electrical properties and thermal stability can be improved by doping small amount of Si in the Ge₂Sb₂Te₅ film. The addition of Si in the Ge₂Sb₂Te₅ film results in the increase of both crystallization temperature and phase-transition temperature from face-centered cubic (fcc) phase to hexagonal (hex) phase, however, decreases the melting point slightly. The crystallization activation energy reaches a maximum at 4.1 at.% and then decreases with increasing dopant concentration. The electrical conduction activation energy increases with the dopant concentration, which may be attributed to the increase of strong covalent bonds in the film. The resistivity of Ge₂Sb₂Te₅ film shows a significant increase with Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460 °C annealing increases from 1 to 11 mΩ cm compared to the undoped Ge₂Sb₂Te₅ film. Current-voltage (I-V) characteristics show Si doping may increase the dynamic resistance, which is helpful to writing current reduction of phase-change random access memory.     

非线性光子晶体中原子辐射光场的非经典性质

讨论了非线性光子晶体微腔中二能级原子在相干场驱动下腔场的频谱特性及光子的统计性质.研究结果表明,当光子晶体的态密度很大时,如果腔场模与原子共振荧光Mollow峰的中心峰共振,则腔场的涨落压缩到量子散弹噪声之下,且与线性光子晶体微腔的情况相比其谱线峰值变大.当驱动场频率较大时光子服从亚Poisson分布,且非常接近Poisson分布.