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Coexistence of superconductivity and ferromagnetism in ferromagnetic metals   总被引:5,自引:0,他引:5  
We address the question of coexistence of superconductivity and ferromagnetism. Using a field theoretical approach we study a one-fermion effective model of a ferromagnetic superconductor in which the quasiparticles responsible for the ferromagnetism form the Cooper pairs as well. For the first time we solve self-consistently the mean-field equations for the superconducting gap and the spontaneous magnetization. We discuss the physical features which are different in this model and the standard BCS model and consider their experimental consequences.  相似文献   
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Rare earth element substituted bismuth ferrites (BiFeO3) are of enormous importance as magnetoelectric materials. The polycrystalline samples of Bi x La1−x FeO3 (x=0, 0.2, 0.4, 0.6, 0.8) were prepared by solid-state reaction using standard ceramic method. The single-phase formation of these compounds was confirmed by X-ray diffraction (XRD) studies. The samples with x=0, 0.2, 0.4, 0.6 are found to be orthorhombic while the sample with x=0.8 is triclinic. The dielectric constant (ε′) and dissipation factor (tan δ) were measured in the frequency range 100 Hz to 1 MHz at room temperature and as a function of temperature at certain fixed frequencies (1 kHz, 10 kHz, 100 kHz, 1 MHz). All the samples showed dielectric dispersion. The dielectric constant with temperature shows a broad peak; the peak temperature shifts with frequency which reflects the relaxor-type behavior. The peak above 600 K in the measured temperature range corresponds to antiferromagnetic ordering temperature (Néel temperature). The broadness of the peak changes with composition. The ac conductivity as well as ε′ are found to be maximum for the sample x=0.2 at room temperature.  相似文献   
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The issue of the net charge at insulating oxide interfaces is briefly reviewed with the ambition of dispelling myths of such charges being affected by covalency and related charge density effects. For electrostatic analysis purposes, the net charge at such interfaces is defined by the counting of discrete electrons and core ion charges, and by the definition of the reference polarization of the separate, unperturbed bulk materials. The arguments are illustrated for the case of a thin film of LaAlO(3) over SrTiO(3) in the absence of free carriers, for which the net charge is exactly 0.5e per interface formula unit, if the polarization response in both materials is referred to zero bulk values. Further consequences of the argument are extracted for structural and chemical alterations of such interfaces, in which internal rearrangements are distinguished from extrinsic alterations (changes of stoichiometry, redox processes), only the latter affecting the interfacial net charge. The arguments are reviewed alongside the proposal of Stengel and Vanderbilt (2009 Phys. Rev. B 80 241103) of using formal polarization values instead of net interfacial charges, based on the interface theorem of Vanderbilt and King-Smith (1993 Phys. Rev. B 48 4442-55). Implications for non-centrosymmetric materials are discussed, as well as for interfaces for which the charge mismatch is an integer number of polarization quanta.  相似文献   
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We study spontaneous quantum coherence in an out of an equilibrium system, coupled to multiple baths describing pumping and decay. For a range of parameters describing coupling to, and occupation of the baths, a stable steady-state condensed solution exists. The presence of pumping and decay significantly modifies the spectra of phase fluctuations, leading to correlation functions that differ both from an isolated condensate and from a laser.  相似文献   
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The two-photon sequential absordtion of iodine to electronic states in the 5 eV energy region has been re-examined using both the 127I2 and 129I2 isotopic species. The vibrational and rotational constants for the E excited state have been determined and an RKR potential curve constructed. Further information on other excited states in this region has been obtained, and the isotope effect used to locate electronic origins.  相似文献   
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