InAs/GaSb superlattice focal plane arrays for high-resolution thermal imaging

The first fully operational mid-IR (3–5 μm) 256×256 IR-FPA camera system based on a type-II InAs/GaSb short-period superlattice showing an excellent noise equivalent temperature difference below 10 mK and a very uniform performance has been realized. We report on the development and fabrication of the detecor chip, i.e., epitaxy, processing technology and electro-optical characterization of fully integrated InAs/GaSb superlattice focal plane arrays. While the superlattice design employed for the first demonstrator camera yielded a quantum efficiency around 30%, a superlattice structure grown with a thicker active layer and an optimized V/III BEP ratio during growth of the InAs layers exhibits a significant increase in quantum efficiency. Quantitative responsivity measurements reveal a quantum efficiency of about 60% for InAs/GaSb superlattice focal plane arrays after implementing this design improvement. The paper presented there appears in Infrared Photoelectronics, edited by Antoni Rogalski, Eustace L. Dereniak, Fiodor F. Sizov, Proc. SPIE Vol. 5957, 595707 (2005).     

Measurement ofD(\vec p,p)D elastic scattering at 10.0, 12.0, 14.1 and 16.5 MeV especially for small forward and extreme backward scattering angles

The elastic scattering was investigated especially in the Coulomb sensitive scattering regions. Angular distributions of the differential cross section and of the analyzing powerA _y, with emphasis on small scattering angles, were measured at 10.0 and 14.1 MeV. For extreme backward angles up toJ _c.m.=179° the differential cross section was measured at 12.0, 14.1 and 16.5 MeV. The data have been compared with recent Faddeev calculations based on the realistic meson-exchange Paris potential and including an approximate Coulomb correction. There are discrepancies between the data and the calculations especially for the analyzing power. This indicates that the approximate treatment of Coulomb effects and possibly also the purely nuclear part of the calculations need to be improved.     

Determination of the partial electron capture- and spontaneous-fission half-lives of254No

The isotope²⁵⁴No was produced in the fusion reaction⁴⁸Ca +²⁰⁸Pb. Using the velocity filter SHIP and radiochemical techniques it was found that the nuclide²⁵⁴No with a half-life of 55 s decays byα, EC, and spontaneous-fission. Deduced partial half-lives are (61±2) s forα-decay, (550 _?160 ⁺³⁷⁰ ) s for EC and [2.2 _?1.0 ^+2.0 ]×10⁴ s for spontaneous fission.     

Semi-insulating electrical properties of undoped inp after heat treatment in a phosphorus atmosphere

Nominally undoped InP wafers have been annealed in a phosphorus atmosphere under a pressure of about 5 bar at temperatures of 900 °C for about 80 h. It was found that the electrical properties of the samples changed considerably after this treatment. A room temperature resistivity of up to 2×10⁷cm (semi-insulating behaviour) was obtained in the bulk of the samples. The resistivity finally obtained depends on the starting carrier concentration of the untreated samples. The Hall coefficient and Hall mobility have been measured up to 600 °C. The results can be interpreted in terms of a deep electronic level (E _A=0.63 ... 0.65 eV below the conduction band). The Hall coefficient was always found to be negative resulting in a Hall mobility of 1.4 to 4.9×10³ cm²/Vs. The highest resistivity in nominally undoped bulk InP so far reported in the literature [1] was =3.6 × 10⁵cm. Therefore, this paper demonstrates for the first time that a really semi-insulating behaviour of >10⁷ cm can be achieved for bulk InP with the purity of nominally undoped material (10¹⁵ to 10¹⁶cm^–3).     

Reibungsdämpfung durch Scheuerleisten: Ein praxisgerechtes Auslegungskonzept

Übersicht Die Fugen zusammengesetzter Bauteile sind einerseits für eine nachteilige Steifigkeitsminderung verantwortlich, tragen aber andererseits durch Reibungsvorgänge wesentlich zum Dämpfungsvermögen einer Konstruktion bei. Merkliche Reibungsdämpfung ohne gleichzeitigen Steifigkeitsverlust bewirken zusätzliche Fugen, die durch Anbringen sogenannter Scheuerleisten entstehen. Der Autor stellt ein Näherungsverfahren zur dämpfungsoptimalen Auslegung von Scheuerleisten vor. Ausgehend von der zu dämpfenden Schwingungsform liefert dieses Verfahren Kriterien für eine günstige Scheuerleistenanordnung, geeignete Leistenabmessungen und als wichtigstes Ergebnis eine dämpfungsoptimale Fugenpressung, die zu maximaler Energiedissipation führt. Schließlich kann das zu erwartende Dämpfungsmaß berechnet und damit das Ergebnis einer vorgesehenen Dämpfungsmaßnahme abgeschätzt werden.

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Damping by friction ledges: a practical design concept

Summary On the one hand, mating surfaces of structures are responsible for a reduction of stiffness, on the other hand relative motion produces friction, which contributes considerably to the damping. Noticeable friction damping without simultaneous stiffness reduction can be achieved by adding further mating surfaces. Such interfaces are realized by fastening additional elements (e.g. beamlike) onto the structure. An analytic approximation method for these so-called friction ledges is described in this paper. Initiating from the mode shape to be damped the procedure yields criteria for the suitable positioning and design of the ledges. Most important of all is the damping optimized interface pressure, that leads to maximum energy dissipation. Finally, the expected damping rate can be computed, and therefore the result of the proposed measure assessed.

     

Umsetzung von hydrobromiertem 1,4-Polybutadien mit lithiumorganischen Verbindungen

Ohne ZusammenfassungMit 1 Abbildung und 1 Tabelle     

Energy-adjustedab initio pseudopotentials for the second and third row transition elements

Summary Nonrelativistic and quasirelativisticab initio pseudopotentials substituting the M^(Z–28)+-core orbitals of the second row transition elements and the M^(Z–60)+-core orbitals of the third row transition elements, respectively, and optimized (8s7p6d)/[6s5p3d]-GTO valence basis sets for use in molecular calculations have been generated. Additionally, corresponding spin-orbit operators have also been derived. Atomic excitation and ionization energies from numerical HF as well as from SCF pseudopotential calculations using the derived basis sets differ in most cases by less than 0.1 eV from corresponding numerical all-electron results. Spin-orbit splittings for lowlying states are in reasonable agreement with corresponding all-electron Dirac-Fock (DF) results.     

Einsatz der flammenlosen Atom-Absorption (Graphitrohrküvette) zur Bestimmung von Kupferspuren in Stahl und anderen Metall-Legierungen nach Extraktion

The determination of small and smallest amounts of copper in steel and other metal alloys by atomic absorption spectroscopy was investigated. It has been found, that the interferences caused by accompanying elements in the determination in aqueous solution with the flame can be completely removed by extracting the copper with Pb-DDTC in chloroform and determining this extract with the heated graphite atomizer. Moreover, it was recognised, that working with the heated graphite atomizer in organic solutions shows great advantages compared with the flame, because any solvent may be used. The methods of continuous variation by Job and the molar ratio by Yoe and Jones for the determination of the complex stoichiometry were transferred to the system Cu-DDTC by working with the heated graphite atomizer.     

Infrared spectroscopic characterization of the buried interface and surfaces of bonded silicon wafers

Basic investigations have been carried out on the characterization of different processing steps in bond preparation using etched <111> faces of silicon wafers for the incidence of the infrared beam to a multiple internal reflection geometry. The method is very sensitive to the surface coverage and interface. Surface activation by RCA cleaning yields an increase of water coverage and a decrease of SiH and CH groups. The detection limit for an oxide layer between silicon wafers has been found to be about 3 nm. Received: 18 July 1997 / Revised: 15 August 1997 / Accepted: 19 August 1997     

Kraftfeldrechnungen an linearen Oligopyrrolen: 2,2′-Bipyrrol, 2,2′-Furylpyrrol und Prodigiosen

Using a specific force field model, relative stabilities of 2,2-bipyrrole and 2,2-furylpyrrole conformers as well as of prodigiosene tautomers, configurations, and conformations, are studied. 2,2-Bipyrrole adopts anantiperiplanar conformation in accord with other theoretical calculations and experimental findings. Its rotational barrier calculated by this method compares favourably to the one derived by other means. For the parent prodigiosene the (Z)sp,sp arrangement is found to be the most stable one. The two possible tautomers within its dipyrrin fragment do not show a significant energy difference.