Emulsion Combustion and Flame Spray Synthesis of Zinc Oxide/Silica Particles

Two flame spray methods, emulsion combustion method (ECM) and flame spray pyrolysis (FSP), were compared for synthesis of pure and mixed SiO₂ and ZnO nanoparticles. The effect of silicon precursor was investigated using liquid hexamethyldisiloxane (HMDSO) or SiO₂ sol, while for ZnO zinc acetate (ZA) was used. Gas phase reaction took place when using HMDSO as Si precursor, forming nanoparticles, whereas the SiO₂ sol used as Si source was not evaporated in the flame, creating large aggregates of the sol particles (e.g. 1 m). The FSP of ZA produced ZnO homogeneous nanoparticles. Lower flame temperatures in ECM than in FSP resulted in mixed gas and liquid phase reaction, forming ZnO particles with inhomogeneous sizes. The FSP of HMDSO and ZA led to intimate gas-phase mixing of Zn and Si, suppressing each other's particle growth, forming nanoparticles of 19 nm in BET-equivalent average primary particle diameter. Nucleation of ZnO and SiO₂ occurred independently by ECM of HMDSO and ZA as well as by FSP of the SiO₂ sol and ZA, creating a ZnO and SiO₂ mixture. The reaction of ZnO with SiO₂ was likely to be enhanced by ECM of the SiO₂ sol and ZA where both Zn and Si species were not evaporated completely, resulting in ZnO, -willemite and Zn_1.7SiO₄ mixed phase.     

Improved surface morphology of flow-modulated MOVPE grown AIN on sapphire using thin medium-temperature AIN buffer layer

High-temperature (HT) AIN films were grown on (0 0 0 1) sapphire by low-pressure flow-modulated (FM) metal organic vapor phase epitaxy (MOVPE) with and without inserting a thin medium-temperature (MT) AIN layer. To suppress parasitic reactions between the sources of trimethylaluminum (TMA) and ammonia (NH₃), TMA and NH₃ was introduced to the reactor of MOVPE by alternating supply way. Surface morphology and crystalline quality were characterized by a scanning electronic microscopy (SEM), atomic force microscopy (AFM) and X-ray rocking curve (XRC) measurements of (0 0 0 2) and (10-12) diffractions. The AFM and SEM measurements indicated that the thin MT-AIN layer had a strong influence on the surface morphology of the HT-AIN films. The surface morphology became quite smooth by inserting the thin MT-AIN layer and surface RMS roughness values were 0.84 nm and 13.4 nm for the HT-AIN films with and without inserting the thin MT-AIN buffer layer, respectively. By etching the samples in aqueous KOH solution, it was found that the polarity of AIN films was different, the HT-AIN film with the thin MT-AIN layer could not be etched, indicating that the film had an Al-polar surface; however, the film without the MT-AIN layer was etched, which was explained that that film had a N- or mixed-polar surface. The mechanism for the origin of the different polarity of HT-AIN with and without the thin MT-AIN layer was proposed and discussed in detail.     

Oxygen adsorption on a Mo2C(0 0 0 1) surface: Angle-resolved photoemission study

Oxygen adsorption on a C-terminated α-Mo₂C(0 0 0 1) surface has been investigated with Auger electron spectroscopy, low-energy electron diffraction, and angle-resolved photoemission spectroscopy utilizing synchrotron radiation. It is found that the oxygen atoms adsorb on the Mo atoms in the second layer forming a (1 × 1) orthorhombic periodicity. The oxygen adsorption induces a peculiar state around the Fermi level, which is observed at 0.4 eV in the normal-emission spectra. ARPES measurements show that the state is a partially occupied metallic state. The photoionization cross section of the state shows a maximum at the photon energy of 56 eV, which is assigned as originating from the resonance of the Mo 4d photoemission involving Mo 4p → 4d photoexcitation.     

Single-Proton Pickup Reaction of the Halo Nucleus ^6He on a ^9Be Target at 25 MeV/nucleon

The inclusive differential cross sections of the ^7 Li nucleus in a reaction induced by ^6He on a ^9Be target are measured at an incident energy of 25 MeV/nucleon. Finite-range distorted-wave Born approximation calculations suggest that these ^7 Li particles are formed in a direct single-proton pickup reaction ^9Be（^6He,^7 Li）^8Li. The experimental data can be well reproduced by taking into account of the contributions of both the ground states and the first excited states of ^7Li and ^8Li.     

Growth of undoped and Zn-doped GaN nanowires

Undoped and Zn-doped GaN nanowires were synthesized by chemical vapor deposition (CVD), and the effects of substrates, catalysts and precursors were studied. A high density of GaN nanowires was obtained. The diameter of GaN nanowires ranged from 20 nm to several hundreds of nm, and their length was about several tens of μm. The growth mechanism of GaN nanowires was discussed using a vapor–liquid–solid (VLS) model. Furthermore, room-temperature cathodoluminescence spectra of undoped and Zn-doped GaN nanowires showed emission peaks at 364 and 420 nm, respectively.     

Metallic behavior and periodical valence ordering in a MMX chain compound, Pt(2)(EtCS(2))(4)I.

A new one-dimensional (1-D) halogen-bridged mixed-valence diplatinum(II,III) compound, Pt(2)(EtCS(2))(4)I (3), has been successfully synthesized from [Pt(2)(EtCS(2))(4)] (1) and [Pt(2)(EtCS(2))(4)I(2)] (2). These three compounds have been examined using UV-visible-near-IR, IR, polarized Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and X-ray crystal structure analyses (except for 1). Compound 3 was further characterized through electrical transport measurements, determination of the temperature dependence of lattice parameters, X-ray diffuse scattering, and SQUID magnetometry. 3 crystallizes in the monoclinic space group C2/c and exhibits a crystal structure consisting of neutral 1-D chains with a repeating -Pt-Pt-I- unit lying on the crystallographic 2-fold axis parallel to the b axis. The Pt-Pt distance at 293 K is 2.684 (1) A in the dinuclear unit, while the Pt-I distances are essentially equal (2.982 (1) and 2.978 (1) A). 3 shows relatively high electrical conductivity (5-30 S cm(-1)) at room temperature and undergoes a metal-semiconductor transition at T(M-S) = 205 K. The XPS spectrum in the metallic state reveals a Pt(2+) and Pt(3+) mixed-valence state on the time scale of XPS spectroscopy ( approximately 10(-17) s). In accordance with the metal-semiconductor transition, anomalies are observed in the temperature dependence of the crystal structure, lattice parameters, X-ray diffuse scattering, and polarized Raman spectra near T(M-S). In variable-temperature crystal structure analyses, a sudden and drastic increase in the Pt-I distance near the transition temperature is observed. Furthermore, a steep increase in U(22) of iodine atoms in the 1-D chain direction has been observed. The lattice parameters exhibit significant temperature dependence with drastic change in slope at about 205-240 K. This was especially evident in the unit cell parameter b (1-D chain direction) as it was found to lengthen rapidly with increasing temperature. X-ray diffraction photographs taken utilizing the fixed-film and fixed-crystal method for the metallic state revealed the presence of diffuse scattering with line shapes parallel to the a* axis indexed as (-, n + 0.5, l) (n; integer). Diffuse scattering with k = n + 0.5 is considered to originate from the 2-fold periodical ordering corresponding to -Pt(2+)-Pt(2+)-I-Pt(3+)-Pt(3+)-I- or -Pt(2+)-Pt(3+)-I-Pt(3+)-Pt(2+)-I- in an extremely short time scale. Diffuse lines corresponding to 2-D ordering progressively decrease in intensity below 252 K and are converted to the diffuse planes corresponding to 1-D ordering near T(M-S). Furthermore, diffuse planes condensed into superlattice reflections below T(M-S). Polarized Raman spectra show temperature dependence through a drastic low-energy shift of the Pt-I stretching mode and also through broadening of bands above T(M-S).     

Effect of temperature and concentration of solution in chemical treatment for MgB2 powder on the Jc–B property of ex situ processed MgB2 superconducting tapes

MgB₂ tapes were fabricated through an ex situ process in a powder-in-tube (PIT) technique using powders treated at elevated temperatures in benzene solutions of benzoic acid with various concentrations. The amount of carbon substitution in MgB₂ in heat-treated tapes with treatment at the boiling points (BPs) of the solutions is smaller than that at room temperature (RT). This carbon substitution improves the J_c property in the high-field region. For RT treatment, the J_c property is improved with increasing the solution concentration. In contrast, the J_c property is deteriorated with increasing the concentration for BP treatment. On the other hand, treatment with pure solvent does not bring about the J_c enhancement and carbon substitution at all at both RT and the BPs. This suggests that acidity essential for the dissolution of MgO layers attached to the surface of MgB₂ is required for carbon substitution. The BP treatment enhances the acting of the acidity and possibly inflicts damage on MgB₂ itself.     

Adsorption behavior of VII group elements on tertiary pyridine resin in hydrochloric acid solution

We investigated the adsorption behaviors of technetium and rhenium on tertiary pyridine resin in hydrochloric acid solution. Technetium has a little larger distribution coefficient in higher concentration of hydrochloric acid region than rhenium. However, the tendency of adsorption behavior of technetium and rhenium is similar. We concluded that the rhenium can be used as the substitute for technetium. Adsorption behaviors of platinum group elements were also investigated. The separation of technetium from platinum group elements is discussed.     

Chelation of cadmium ions by phytochelatin synthase: role of the cysteine-rich C-terminal.

The interactions between Cd(2+) and the C-terminal region of phytochelatin (PC) synthase using recombinant wild-type and mutant PC synthase were studied. We show that site-directed mutagenesis of Cys residues at C(358)C(359)XXXC(363)XXC(366) motif decreases the number of Cd(2+) and other heavy metal ions interacting with the enzyme, and that the motif binds the metals discriminatingly. The optimum binding ratio of PC synthase to Cd(2+) was also determined. The findings indicate that Cys exists as a free SH residue and that it is involved in the regulation of PC enzyme activity by transferring the metals into closer proximity with the catalytic domain. These results are important in understanding heavy metal detoxification mechanisms in higher plants, a step towards phytoremediated-applications.