Nachweis und Bestimmung der Benzo?s?ure in Lebensmitteln

Ohne Zusammenfassung     

Extension of statistical replacement to systems with time-correlated fluctuations

Nonlinear systems with correlated stochastic parameters are approximated by simpler systems. This method is an extension of an earlier version of statistical replacement and statistical linearization. The extended method is applicable to systems with correlated fluctuations. We show how this general method reduces to the earlier methods in special cases.     

Ueber die Bestimmung des Kalis im schwefelsauren Kali

Ohne ZusammenfassungLeopoldshall-Stassfurt, den 22. März 1881.     

Why Do Big Data and Machine Learning Entail the Fractional Dynamics?

Fractional-order calculus is about the differentiation and integration of non-integer orders. Fractional calculus (FC) is based on fractional-order thinking (FOT) and has been shown to help us to understand complex systems better, improve the processing of complex signals, enhance the control of complex systems, increase the performance of optimization, and even extend the enabling of the potential for creativity. In this article, the authors discuss the fractional dynamics, FOT and rich fractional stochastic models. First, the use of fractional dynamics in big data analytics for quantifying big data variability stemming from the generation of complex systems is justified. Second, we show why fractional dynamics is needed in machine learning and optimal randomness when asking: “is there a more optimal way to optimize?”. Third, an optimal randomness case study for a stochastic configuration network (SCN) machine-learning method with heavy-tailed distributions is discussed. Finally, views on big data and (physics-informed) machine learning with fractional dynamics for future research are presented with concluding remarks.     

Singlet and triplet potential surfaces for the O2+C2H4 reaction

Electronic structure calculations at the CASSCF and UB3LYP levels of theory with the aug-cc-pVDZ basis set were used to characterize structures, vibrational frequencies, and energies for stationary points on the ground state triplet and singlet O(2)+C(2)H(4) potential energy surfaces (PESs). Spin-orbit couplings between the PESs were calculated using state averaged CASSCF wave functions. More accurate energies were obtained for the CASSCF structures with the MRMP2/aug-cc-pVDZ method. An important and necessary aspect of the calculations was the need to use different CASSCF active spaces for the different reaction paths on the investigated PESs. The CASSCF calculations focused on O(2)+C(2)H(4) addition to form the C(2)H(4)O(2) biradical on the triplet and singlet surfaces, and isomerization reaction paths ensuing from this biradical. The triplet and singlet C(2)H(4)O(2) biradicals are very similar in structure, primarily differing in their C-C-O-O dihedral angles. The MRMP2 values for the O(2)+C(2)H(4)→C(2)H(4)O(2) barrier to form the biradical are 33.8 and 6.1 kcal/mol, respectively, for the triplet and singlet surfaces. On the singlet surface, C(2)H(4)O(2) isomerizes to dioxetane and ethane-peroxide with MRMP2 barriers of 7.8 and 21.3 kcal/mol. A more exhaustive search of reaction paths was made for the singlet surface using the UB3LYP/aug-cc-pVDZ theory. The triplet and singlet surfaces cross between the structures for the O(2)+C(2)H(4) addition transition states and the biradical intermediates. Trapping in the triplet biradical intermediate, following (3)O(2)+C(2)H(4) addition, is expected to enhance triplet→singlet intersystem crossing.     

Limits on passivating defects in semiconductors: the case of Si edge dislocations

By minimizing the free energy while constraining dopant density, we derive a universal curve that relates the formation energy (E(form)) of doping and the efficiency of defect passivation in terms of segregation of dopants at defect sites. The universal curve takes the simple form of a Fermi-Dirac distribution. Our imposed constraint defines a chemical potential that assumes the role of "Fermi energy," which sets the thermodynamic limit on the E(form) required to overcome the effect of entropy such that dopant segregation at defects in semiconductors can occur. Using Si edge dislocation as an example, we show by first-principles calculations how to map the experimentally measurable passivation efficiency to our calculated E(form) by using the universal curve for typical n- and p-type substitutional dopants. We show that n-type dopants are ineffective. Among p-type dopants, B can satisfy the thermodynamic limit while improving electronic properties.     

Search for hadronic decays of a light Higgs boson in the radiative decay Υ→γA0

We search for hadronic decays of a light Higgs boson (A(0)) produced in radiative decays of an Υ(2S) or Υ(3S) meson, Υ→γA(0). The data have been recorded by the BABAR experiment at the Υ(3S) and Υ(2S) center-of-mass energies and include (121.3±1.2)×10(6) Υ(3S) and (98.3±0.9)×10(6) Υ(2S) mesons. No significant signal is observed. We set 90% confidence level upper limits on the product branching fractions B(Υ(nS)→γA(0))B(A(0)→hadrons) (n=2 or 3) that range from 1×10(-6) for an A(0) mass of 0.3 GeV/c(2) to 8×10(-5) at 7 GeV/c(2).     

Spatial condensation of trapped polaritons in graphene and semiconductor structures

The theoretical and experimental status of the Bose–Einstein Condensation (BEC) of trapped quantum well (QW) polaritons in a microcavity is presented. The results of recent experiments that have shown the possibility to create an in-plane harmonic potential trap for a two-dimensional (2D) exciton polaritons in a cavity are discussed. We report the theory of BEC and of the trapped QW exciton polaritons in a microcavity. In addition, we study the BEC of trapped magnetoexciton polaritons in a graphene layer (GL) embedded in an optical microcavity in high magnetic field. In both cases the polaritons are considered to be in a harmonic potential trap. We compare the theoretical results with the existing experiments and discuss the experimental observation of predicted phenomena.