The propagation of dipole solitonsin highly nonlocal medium

This paper studies the propagation of dipole solitons in highly nonlocal medium by using the variational method. It finds that the dipole solitons will be stable when the input power obeys a restrict value. When the incident power does not satisfy the stable conditions, the nonlocal accessible dipole solitons will undergo linear harmonic oscillation. It shows such evolution behaviours in detail.     

湍流介质折射率结构常数C_n~2对双半高斯空心光束传输特性影响的研究

基于瑞利-索末菲衍射积分理论,利用交叉谱密度函数推导出双半高斯空心光束在湍流大气中传输时的解析表达式,并主要研究了湍流介质折射率结构常数C2n对空心光束传输特性的影响,得到了双半高斯空心光束在不同条件下传输时的光强分布.研究表明,C2n的增大加剧了近场中传输的空心光束的衍射效应,这不仅缩短了空心光束完全演变成为高斯光束时所需的传输距离,而且还增加了此后高斯光束向外扩展的程度.     

VO$lt;sub$gt;2$lt;/sub$gt;/AZO复合薄膜的制备及其光电特性研究

采用直流磁控溅射和后退火氧化的方法在掺铝氧化锌(AZO)导电玻璃上制备了二氧化钒(VO₂)薄膜,研究了不同的退火温度、退火时间对VO₂/AZO复合薄膜制备的影响,并对复合薄膜的结构、组分、光电特性进行了测试与分析. 结果表明,导电玻璃上的AZO没有改变VO₂的取向生长,但明显改变了VO₂薄膜的表面形貌特征. 与用相同工艺和条件在普通玻璃基底上制备的VO₂薄膜相比,VO₂/AZO复合薄膜的相变温度降低约25 ℃,热滞回线宽度收窄至6 ℃,相变前后可见光透过率均在50%以上,1500 nm处红外透过率约为55%和21%,电阻率变化达3 个数量级. 该复合薄膜表面平滑致密,制备工艺简单,性能稳定,可应用于新型光电器件. 关键词： 2')" href="#">VO₂ AZO 热致相变 光电特性     

Faithful Remote Information Concentration Based on the Optimal Universal 1→2 Telecloning of Arbitrary Two-Qubit States

The previous protocols of remote quantum information concentration were focused on the reverse process of quantum telecloning of single-qubit states. We here investigate the reverse process of optimal universal 1→2 telecloning of arbitrary two-qubit states. The aim of this telecloning is to distribute respectively the quantum information to two groups of spatially separated receivers from a group of two senders situated at two different locations. Our scheme shows that the distributed quantum information can be remotely concentrated back to a group of two different receivers with 1 of probability by utilizing maximally four-particle cluster state and four-particle GHZ state as quantum channel.     

本征缺陷对β-Ga2O3光催化性质影响的第一性原理研究

运用第一性原理杂化泛函研究了本征缺陷(O空位和Ga空位)对于β-Ga₂O₃的几何结构和电子性质的影响.计算结构表明:杂化泛函B3LPY能很好的描述β-Ga₂O₃的几何结构和电子结构,能与实验符合.含O缺陷的形成能在富氧和贫氧下分别为4.04和0.92 eV,优于含Ga缺陷的体系.空位缺陷的出现对于理想Ga₂O₃的晶格参数影响不显著,只是在O空位体系中,空位附近Ga-O键长有0.1?变化.含空位缺陷的体系的禁带中都有缺陷能级的出现,含Ga和O空位缺陷的Ga₂O₃的光跃迁能分别为1.93 eV(β自旋)和2.92 eV,有很明显的光吸收的拓展,从理论上解释了Ga₂O₃作为光催化材料的潜在应用.