New rigid-rod poly(benzoxazole-imide)s containing chloro-substituted p-phenylene units in the main chain

A series of new poly(o-hydroxy amide-imide)s with high molecular weights were synthesized by low-temperature solution polycondensation from a preformed imide ring and chloro- or dichloro-substituted p-phenylene-containing diacid chlorides of 2,5-bis(trimellitimido)chlorobenzene or 1,4-bis(trimellitimido)-2,5-dichlorobenzene and three bis(o-amino phenol)s. All the poly(o-hydroxy amide-imide)s were readily soluble in a variety of organic solvents such as N-methyl-2-pyrrolidone and N,N-dimethylacetamide. Transparent and flexible films of these polymers were cast from their solutions. The cast films had tensile strengths ranging from 88 to 102 MPa and elongations at break of 8–12%. Subsequent thermal cyclodehydration of the poly(o-hydroxy amide-imide)s afforded novel poly(benzoxazole-imide)s. The poly(benzoxazole-imide)s exhibited glass-transition temperatures in the range of 310–338 °C and were stable up to 500 °C in nitrogen, with 10% weight-loss temperatures recorded between 550 and 570 °C in nitrogen. © 1999 John Wiley & Sons, Inc. J Polym Sci A: Polym Chem 37: 4151–4158, 1999     

第一性原理研究[112]硅锗异质结纳米线的电子结构与光学性质

基于密度泛函理论体系下的广义梯度近似,本文利用第一性原理方法着重研究了[112]晶向硅锗异质结纳米线的电子结构与光学性质.能带结构计算表明:随着锗原子数的增加,[112]晶向硅锗纳米线的带隙逐渐减小;对Si_(36)Ge_(24)H_(32)纳米线施加单轴应变,其能量带隙随拉应变的增加而单调减小.光学性质计算则表明:随着锗原子数的增加,[112]硅锗纳米线介电函数的峰位和吸收谱的吸收边均向低能量区移动;而随着拉应变的增大,吸收系数峰值呈现出逐渐减小的趋势,且峰位不断向低能量区移动,上述结果说明锗原子数的增加与施加拉应变均导致[112]硅锗纳米线的吸收谱产生红移.本文的研究为硅锗异质结纳米线光电器件研究与设计提供一定的理论参考.     

Image contrast enhancement in field-emission scanning electron microscopy of single-walled carbon nanotubes

The image contrast enhancement in scanning electron microscopy of single-walled carbon nanotubes (SWNTs) on SiO₂ surfaces was experimentally investigated using a field-emission scanning electron microscope (FESEM) using a wide range of primary electron (PE) voltages. SWNT images of different contrasts were obtained at different PE voltages. Image contrast enhancement of SWNTs was investigated by charging SiO₂ surfaces at different PE voltages. The phenomena are ascribed to the surface potential difference and charge injection between SWNTs and SiO₂ substrates induced by the electron-beam irradiation.     

高压下BaHfO3电子结构与光学性质的第一性原理研究

从第一性原理出发,在局域密度近似下,采用基于密度泛函理论的平面波超软赝势计算方法系统地研究了高压对BaHfO₃电子结构与光学性质的影响.能带结构分析表明;无压强和施加正压强作用时,BaHfO₃为直接带隙绝缘体,而施加负压强时,BaHfO₃则转变为间接带隙半导体;BaHfO₃的带隙随压强增加而减小,且具有明显的非线性关系.对光学性质的分析发现:施加正压强后,光学吸收带边产生蓝移;负压强作用时介电函数虚部尖峰减少,光学吸收带边产生红移;施加压强后BaHfO₃的静态介电常数和静态折射率均增大.上述研究表明施加高压有效调制了BaHfO₃的电子结构和光学性质,计算结果为BaHfO₃光电材料的设计与应用提供了理论依据.     

Preparation and characterizations of asymmetric sulfonated polysulfone membranes by wet phase inversion method

This paper presents an original approach to prepare the asymmetric sulfonated polysulfone membranes by using wet phase inversion method and their applications for dehydrating a water/ethanol mixture by pervaporation. The separation performances of sulfonated membranes were strongly affected by the degree of sulfonation and the degree of swelling of membranes. The substitution degree of sulfonic group enhanced the permselectivity of sulfonated polysulfone membranes by increasing the hydrophilicity of polymer backbone. Based on the observations of membrane morphology and light transmittance measurements, the degree of sulfonation of polysulfone presented less influence on the membrane formation pathway and the final structure of membrane in wet phase inversion process. It was also found that the sulfonated membranes showed well hydrophilic properties and facilitated water adsorption in the membranes. The sorption and permeation properties also showed that the permselectivity of asymmetric membrane was dominated by the permeate diffusion rather than the permeate sorption in the skin layer. The high separation performance of pervaporation membrane can be achieved by phase inverse method with sulfonated polysulfone.     

Structures and Magnetic Properties of Two Copper(II) Complexes with 2,5‐Dichloro‐3,6‐Dihydroxy‐1,4‐Benzoquinone Dianionic and Tetrachloroquinone Ligand

The polynuclear copper(II) complex [Cu₂(Hdpa)₂(μ‐ClDHBQ)(ClO₄)₂]_n, 1 is bridged by ClDHBQ^?2 (2,5‐dichloro‐3,6‐dihydroxy‐1,4‐benzoquinone dianionic) and 2,2′‐dipyridylamine (Hdpa). In the axial position, Cu is connected with the oxygen atom of ClO. The perchlorate anion may be envisaged as a monodentate O‐bound ligand. Through the bond bridge of O–Cu … O–Cl, the binuclear compound [Cu₂(Hdpa)₂(μ‐ClDHBQ)(ClO₄)₂] is strung together into a long chain compound. Tetrachlorocatechol underwent partial oxidation/hydrolysis/dechlorination processes to produce ClDHBQ^?2. The other mononuclear complex [Cu(Hdpa)(TeCQ)](DMF), 2 , in which tetrachloroquinone (TeCQ) was produced by oxidation of tetrachlorocatechol (TeCC), therefore complex 2 is in the quinone form. The magnetic susceptibility measurements show antiferromagnetic coupling with J = ?11.9 cm^?1, θ = 2.6 K, and g = 2.05 for complex 1. Complex 2 exhibits the typical paramagnetic behavior of s = 1/2.     

Thermally-induced order-order transition of DNA-cationic surfactant complexes

Polyanionic DNA interacts with cationic amphiphiles to form electrostatic complexes exhibiting rich self-assembled structures. This type of complex has been considered as a nonviral carrier in gene therapy and as a template for nanostructure construction. Here we report a thermally-induced phase transition of the complexes of DNA with the mixtures of a cationic surfactant, dodecyltrimethyl bromide (DTAB), and a neutral lipid, dioleoylphosphatidylethanolamine (DOPE), in fully hydrated state. An order-order transition between a multilamellar (L(c)alpha) phase and an inverted hexagonal (H(c)II) phase was found to occur with the transition temperature adjustable by the DTAB-to-DNA base pair molar ratio (x) and DOPE-to-DTAB molar ratio (m). The stability of the L(c)alpha phase was enhanced at lower m and x, as the L(c)alpha-to-H(c)II transition temperature increased with the decreases of these two parameters. The suppression of -to- transition at lower x was attributed to the lower entropic gain from the counterion release due to the presence of uncomplexed DNA in the bulk solution.     

Mn掺杂ZnS(110)表面的电子结构和磁性

采用基于密度泛函理论的第-性原理方法,研究Mn掺杂ZnS(110)表面的电子结构和磁性.计算分析不同掺杂组态的几何参数、形成能、磁矩、电子态密度以及电荷密度.结果表明:单个Mn原子掺杂,替位于表面第二层的Zn原子时体系形成能最低,说明该层是最稳定的掺杂位置.对于两个Mn原子的掺杂,当Mn与Mn之间呈反铁磁耦合时体系最稳定.体系的总磁矩和自由Mn原子的磁矩差别很小,但是Mn原子的局域磁矩却依赖于Mn原子的3d态和近邻S原子的3p态的杂化作用,即受周围S原子环境的变化影响较大.此外,分析电荷密度图得出Mn原子替换Zn原子后与S原子形成了更强的共价键.     

Synthesis of chromeno[4,3-b]pyrrolidines from azomethine ylides and vinyl para-quinone methides via (3 + 2) cycloaddition/oxa-1,6-addition

An efficient synthesis of chromeno[4,3-b]pyrrolidines has been successfully developed. This strategy involves a base-catalyzed reaction of p-VQMs and o-hydroxy azomethine ylides via (3 + 2) cycloaddition/oxa-1,6-addition reaction sequence. The reaction condition is mild, and a series of chromeno[4,3-b]pyrrolidines were obtained in 49-95% yields with excellent diastereoselectivity (dr > 20:1).     

Multilevel Nonvolatile Flexible Organic Field‐Effect Transistor Memories Employing Polyimide Electrets with Different Charge‐Transfer Effects

The electrical memory characteristics of the n‐channel organic field‐effect transistors (OFETs) employing diverse polyimide (PI) electrets are reported. The synthesized PIs comprise identical electron donor and three different building blocks with gradually increasing electron‐accepting ability. The distinct charge‐transfer capabilities of these PIs result in varied type of memory behaviors from the write‐one‐read‐many (WORM) to flash type. Finally, a prominent flexible WORM‐type transistor memory is demonstrated and shows not only promising write‐many‐read‐many (WMRM) multilevel data storage but also excellent mechanical and retention stability.