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991.
We discuss the preparation and spectroscopic characterisation of a single InAs/InP quantum dot suitable for long-distance quantum key distribution applications around λ=1.55 μm. The dot is prepared using a site-selective growth technique which allows a single dot to be deposited in isolation at a controlled spatial location. Micro-photoluminescence measurements as a function of exciton occupation are used to determine the electronic structure of the dot. Biexciton emission, shell filling and many-body re-normalization effects are observed for the first time in single InAs/InP quantum dots.  相似文献   
992.
We have carried out an ultrafast time-resolved differential reflectivity study of a ferromagnetic semiconductor InGaMnAs and made a systematic comparison with low-temperature grown and high-temperature grown InGaAs reference films. Very short carrier lifetimes (2 ps) were observed in InGaMnAs and the low-temperature grown InGaAs film, but not in the high-temperature grown InGaAs film. We attribute the short lifetimes to carrier trapping by mid-gap states introduced during low-temperature MBE growth. Furthermore, at long times, we observed periodic oscillations in the differential reflectivity signal with period 20 ps, which we interpret as coherent acoustic phonons.  相似文献   
993.
Nonlinear susceptibility of a quantum dot (QD) embedded in a two-sided cavity, is studied theoretically from a weak-coupling to a strong-coupling regime. In the relevance of a quantum logic gate, the corresponding nonlinear phase shifts (Kerr effect) are estimated for coherent wavepackets including one photon on average. In the weak-coupling regime, the phase shift enhances strongly as a function of a coupling constant between the cavity photon and QD, and eventually saturates in the strong-coupling regime. We also show transmission spectra to evaluate the efficiency of the phase shift. Although the efficiency decreases monotonically in the weak-coupling regime, it rises in the strong-coupling regime.  相似文献   
994.
This paper considers the problem of the transverse vibrations of a beam induced by a mobile heat source. The formulation of the problem is based on the differential equations of heat conduction and transverse vibrations of the beam, which are complemented by suitable initial and boundary conditions. The effect of internal and external damping on the vibrations of the beam is considered. The solution to the problem in analytical form is obtained by using the properties of the Green functions. A time partitioning method has been used to avoid the difficulties associated with the slow convergence of the series occurring in the solution to the heat conduction problem. The numerical results of the thermally induced vibration of the beam are presented.  相似文献   
995.
Summary. We consider the spline collocation method for a class of parabolic pseudodifferential operators. We show optimal order convergence results in a large scale of anisotropic Sobolev spaces. The results cover the classical boundary integral equations for the heat equation in the general case where the spatial domain has a smooth boundary in the plane. Our proof is based on a localization technique for which we use our recent results proved for parabolic pseudodifferential operators. For the localization we need also some special spline approximation results in anisotropic Sobolev spaces. Received May 17, 2001 / Revised version received February 19, 2002 / Published online April 17, 2002  相似文献   
996.
An individual Mn acceptor in GaAs is mapped by cross-sectional scanning tunneling microscopy (X-STM) at room temperature and a strongly anisotropic shape of the acceptor state is observed. An acceptor state manifests itself as a cross-like feature which we attribute to a valence hole weakly bound to the Mn ion forming the (Mn2+3d5+hole) complex. We propose that the observed anisotropy of the Mn acceptor wavefunction is due to the d-wave present in the acceptor ground state.  相似文献   
997.
A set of new, air‐stable, RhI‐based heterogeneous asymmetric hydrogenation catalysts have been synthesised, characterised, and tested. Individual members of this new family all exhibit good enantioselectivity.  相似文献   
998.
999.
J K Baria  A R Jani 《Pramana》2003,60(6):1235-1246
A pseudopotential depending on an effective core radius is proposed to study the binding energy, equation of state, ion-ion interaction, phonon dispersion curves (q-space and r-space analysis), mode Grüneisen parameters and dynamical elastic constants of some fcc f-shell metals La, Yb, Ce and Th. The contribution of the s-like electrons is calculated in the second-order perturbation theory for the potential while d and f-like electron is taken into account by introducing repulsive short-range Born-Mayer term. The parameter of the potential is evaluated by zero pressure condition. An excellent agreement between theoretical investigations and experimental findings is achieved which confirms the present formalism  相似文献   
1000.
In this work, we present both the theoretical basis as well as supporting experimental measurements for development of a novel mid-infrared thermally stimulated narrow band emitter with a spectral bandwidth of less than 10%. To achieve this, we utilize a metallized-surface 2D photonic crystal of air voids in a silicon background with hexagonal structure symmetry. Our results are based on the generation of discrete surface plasmon (SP) modes in the thin metallized layer residing on the top surface. This yields a series of adequately spaced discrete peaks in the reflection spectrum, dominated by a single sharp feature corresponding to the lowest plasmon order, in an otherwise uniform highly reflective spectrum (>90%) over most of the IR spectrum. This, in turn, gives rise to a sharp absorption feature with a correspondingly narrow thermal emission peak in the emission spectrum. Transfer matrix calculations simulate well both the position and strengths of the absorption peaks. By altering the period of the surface photonic lattice, the SP peak and emissive band can be tuned to the desired wavelength. These devices promise a new class of tunable infrared emitters with high power in a narrow spectral bandwidth. Such narrow band sources are critical to achieving high efficiency gas sensors.  相似文献   
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