Photosensitive organic-inorganic hybrid structures based on porous silicon

Abstract

In this study, the photovoltaic organic-inorganic structures were created by deposition of poly(3,4-ethylenedioxythiophene) film doped by poly(styrenesulfonate) and reduced graphene oxide on the porous silicon/silicon substrate. Formation of the hybrid structure was confirmed by means of atomic-force microscopy and Fourier transform infrared spectroscopy. The current-voltage characteristics of the obtained structures were studied. It was found the increase of electrical conductivity and photo-induced signal in organic-inorganic structures. Temporal parameters and spectral characteristics of photoresponse in the 400–1100?nm wavelength range were investigated. The widening of spectral photosensitivity in a short-wavelength range due to light absorption in various layers of the multijunction structure in comparison with single crystal silicon was revealed.     

Preparation and Insecticidal Activity of the First Organofluorine Insecticide Based on β-D-Ribofuranoside Monosaccharide

Russian Journal of General Chemistry - A method was developed for the synthesis of an organofluorine derivative of β-D-ribofuranoside. Biological tests revealed high insecticidal activity and...     

A New Method to Study the Structure of NMR Signals Detected with the Aid of Modulation Procedure

Technical Physics - A need to study the structure of the NMR signals detected with the aid of the modulation method is substantiated. Specific features of the detection of the NMR signals using the...