Mechanism and control of current transport in GaN and AlGaN Schottky barriers for chemical sensor applications

Strong interests are recently emerging for development of integrated high-performance chemical sensor chips. In this paper, the present status of understanding and controlling the current transport in the GaN and AlGaN Schottky diodes is discussed from the viewpoint of chemical sensor applications. For this purpose, a series of works recently carried out by our group are reviewed in addition to a general discussion. First, current transport in GaN and AlGaN Schottky barriers is discussed, introducing the thin surface barrier (TSB) model to explain the anomalously large leakage currents. Following this, attempts to reduce the leakage currents are presented and discussed. Then, as an example of gas-phase sensors using Schottky barriers, a Pd/AlGaN/GaN Schottky diode hydrogen sensor developed recently by our group is presented with a discussion on the sensing mechanism and related current transport. On the other hand, in liquid-phase sensors, contact is made between liquid and semiconductor which is regarded as a kind of Schottky barrier by electrochemists. As one of such liquid-phase sensors, open-gate AlGaN/GaN heterostructure field effect transistor (HFET) pH sensor developed recently by our group is presented. Finally, a brief summary is given together with some remarks for future research.     

Acerogenin M, a cyclic diarylheptanoid, and other phenolic compounds from Acer nikoense and their anti-inflammatory and anti-tumor-promoting effects

A new cyclic diarylheptanoid, acerogenin M (1), has been isolated along with nine known diarylheptanoids, 2-10, and two known phenolic compounds, 11 and 12, from a MeOH extract of the stem bark of Acer nikoense MAXIM. (Aceraceae). The structure of 1 was determined on the basis of a spectroscopic method. Upon evaluation of the inhibitory effects on 12-O-tetradecanoylphorbol-13-acetate (TPA)-induced inflammation (1 microg/ear) in mice of nine of the compounds (2-6, 8, 10-12), six (2, 4-6, 8, 10) showed a marked anti-inflammatory effect with a 50% inhibitory dose (ID(50)) of 0.26-0.81 mg per ear. In addition, upon an evaluation against the Epstein-Barr virus early antigen (EBV-EA) activation induced by TPA for all of the compounds, all exhibited moderate inhibitory effects against EBV-EA induction (IC(50) values of 356-534 mol ratio/32 pmol TPA).     

Surface passivation of III-V semiconductors for future CMOS devices—Past research, present status and key issues for future

Currently, III-V metal-insulator-semiconductor field effect transistors (MISFETs) are considered to be promising device candidates for the so-called “More Moore Approach” to continue scaling CMOS transistors on the silicon platform. Strong interest also exists in III-V nanowire MISFETs as a possible candidate for a “Beyond CMOS”-type device. III-V sensors using insulator-semiconductor interfaces are good candidates for “More Moore”-type of devices on the Si platform. The success of these new approaches for future electronics depends on the availability of a surface passivation technology which can realize pinning-free, high-quality interfaces between insulator and III-V semiconductors.This paper reviews the past history, present status and key issues of the research on the surface passivation technology for III-V semiconductors. First, a brief survey of previous research on surface passivation and MISFETs is made, and Fermi level pinning at insulator-semiconductor interface is discussed. Then, a brief review is made on recent approaches of interface control for high-k III-V MIS structures. Subsequently, as an actual example of interface control, latest results on the authors’ surface passivation approach using a silicon interface control layer (Si ICL) are discussed. Finally, a photoluminescence (PL) method to characterize the interface quality is presented as an efficient contactless and non-destructive method which can be applied at each step of interface formation process without fabrication of MIS capacitors and MISFETs.     

SiO(x) Monolayer Overcoating Effect on the TiO(2) Photocatalytic Oxidation of Cetylpyridinium Bromide

The effect of SiO(x) monolayer coverage on the rate of TiO(2) photocatalytic oxidation of cetylpyridinium bromide (CPB) in aqueous solutions has been studied. The rate of CPB removal from the solution (5相似文献   

Electronic structures of aromatic amine N-oxides

The electronic structures of heterocyclic amine N-oxides, nitrones, and nitrile N-oxides were systematically studied by the Pariser-Parr-Pople method. In addition, the intensity of n- ^* transition pertinent to conjugated N-oxide systems has been calculated. The results of these calculations were compared with the experimental ones reported hitherto and also carried out in the present work. The electronic structure and spectra of aromatic amine N-oxides were thus discussed in detail.

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Zusammenfassung Die elektronische Struktur heterozyklischer Amin-N-Oxide, Nitrone und Nitril-N-Oxide wird systematisch mit Hilfe der Pariser-Parr-Pople-Methode untersucht. Au\erdem wurde die IntensitÄt von n- ^*-übergÄngen konjugierter N-Oxide berechnet. Die Resultate wurden mit bekannten sowie eigenen experimentellen Ergebnissen verglichen. Die Elektronenstruktur und die Spektren aromatischer Amin-N-Oxide wurden so im Detail diskutiert.

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Résumé La structure électronique d'amine N-oxydes, de nitrones, et de nitrile N-oxydes ont été étudiés systématiquement par la méthode de Pariser-Parr-Pople. De plus, l'intensité de la transition n- ^* des systémes N-oxydes conjugués a été calculée. Les résultats de ces calculs ont été comparés aux résultats expérimentaux rapportés précédemment et également à ceux du présent travail. La structure électronique et le spectre des N-oxydes d'amines aromatiques ont ainsi été discutés en détail.

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Presented at the 21st (Osaka, April 1968) Annual Meeting of the Chemical Society of Japan, and the Symposium of Structure Chemistry and the Electronic State of Molecules (Tokyo, October 1968).     

Ammonia synthesis by means of plasma over MgO catalyst

Ammonia synthesis from H₂-N₂ mixed gas was studied at room temperature in a glow-discharge plasma in the presence of metals or metal oxides. Magnesia (MgO) and calcia (CaO), which are oxides with solid basicity, revealed catalytic activity in the plasma synthesis of ammonia, although they are catalytically inactive in industrial ammonia synthesis. The acidic oxides (Al₂O₃, WO₃, and SiO₂-Al₂O₃) lead to the consumption of the reactant, i.e., the H₂-N₂ mixed gas. No ammonia was isolated. Metal catalysts showed higher activity than the above basic oxides. They have, however, different activities. The reaction was faster over the active materials than over sodium chloride (NaCl) or glass wool or in a blank reactor without any catalyst.     

Adsorption-Desorption Characteristics of Water Vapor on Functional Cattle Bone-Originated Apatites Powders with Mesopores

Microcrystals of cattle bone-originated apatites (r-HAp) were prepared by the dissolution-precipitation and freeze-drying processes. The r-HAp particles obtained gave 128 m 2 ;g m 1 specific surface area and 0.376 cm 3 ;g m 1 total pore volume and strong basic surface with mesopores. All the adsorption isotherms of water vapor at 288-308 K for the r-HAp powders obeyed IV-type in a classification of the BDDT. In the repeated adsorption-desorption operations, an adsorption hysteresis resulting from mesopores was recognized. The amounts of water vapor adsorbed obtained in the first adsorption operation were larger than those in the second adsorption operation, indicating that some portion of water vapor adsorbed to be irreversible adsorption. The water vapor-adsorption heats for the r-HAp were 45-60 kJ;mol m 1 , whose values were higher than natural diatomite. The amounts of water vapor adsorbed for the r-HAp were larger than those for the adsorbents, such as natural diatomite, aerosol silica, and activated carbon, at the relative partial pressures of 0-0.7.