Synthesis and Raman analysis of 1D-ZnO nanostructure via vapor phase growth

1D-nanostructural zinc oxide (ZnO) with different shapes have been synthesized on p-type Si(1 0 0) and glass substrates via vapor phase growth by heating pure zinc powder at temperatures between 480 and 570 °C. The different ZnO nanostructures depend on the substrates and the growth temperatures. Scanning electron microscopy and X-ray diffraction revealed that a well-aligned nanowires array, which are vertical to the substrate of Si(1 0 0) with 18 sides on their heads, but six sides on their stems, has been formed at 480 °C. Raman study on the ZnO nanostructures shows that the coupling strength between electron and phonon determined by the ratio of the second- to the first-order Raman scattering cross-sections declines with decreasing diameter of the nanowires. However, a little changes of the coupling strength in terms of the width of the nanobelts have been observed.     

The Novel Y-Branch With Two Reflectors

A novel Y-branch waveguide with two reflectors is proposed. The normalized transmitted power for the branching angle of 50°is greater than 70%, which is higher than conventional Y-branch with such wide angle.     

Comparative investigation of up-conversion luminescence in Tm/Yb-codoped germanate-niobic and germanium-bismuth glasses: effect of phonon density on up-conversion emission

Tm³⁺/Yb³⁺-codoped germanate-niobic (GN) and germanium-bismuth (GB) glasses have been synthesized by conventional melting and quenching method. Intense blue and weak red emissions centered at 477 and 650 nm, corresponding to the transitions ¹G₄→³H₆ and ¹G₄→³H₄, respectively, were observed at room temperature. The possible up-conversion mechanisms are discussed and estimated. GN glass showed a weaker up-conversion emission than GB glass, which is inconsistent with the prediction from the difference of maximum phonon energy between GN and GB glasses. In this paper, Raman spectroscopy was employed to investigate the origin of the difference in up-conversion luminescence in the two glasses. Compared with phonon side-band spectroscopy, Raman spectroscopy extracts more information including both phonon energy and phonon density. For the first time, our results reveal that, besides the maximum phonon energy, the phonon density of host glasses is also an important factor in determining the up-conversion efficiency.     

从一道运动学题目的求解谈坐标系选取的重要性

通过比较一道典型运动学题目的近似求解方法与精确求解方法，探讨坐标系选取对研究曲线运动的重要性．     

离子注入诱导量子阱界面混合效应的光致荧光谱研究

采用多元芯片方法获得了一系列不同离子注入剂量的GaAsAlGaAs非对称耦合量子阱单元,通过光致荧光谱测量,研究了单纯的离子注入导致的界面混合效应.荧光光谱行为与有效质量理论计算研究表明,Al原子在异质结界面的扩散在离子注入过程中已基本完成,而热退火作用主要是去除无辐射复合中心. 关键词： 量子阱 离子注入 光致荧光谱 界面混合     

单模光纤中皮秒啁啾脉冲压缩

对单模光纤正群速色散区秒啁啾脉冲的非线性传进行了近似的解析分析和定量的数值计算。结果表明，负啁啾脉冲在传输过程中能得到有效压缩。压缩比与脉冲初始峰值功率和初始啁啾程度有关。初始峰值功率一定的脉冲，其压缩比随初始啁啾程度的增大面大，初始啁啾程度一定的脉冲，压缩比随初始峰值功率的增大而减小，表明自相位调制效应导致脉冲压缩效果变差。计算结果还表明，在脉冲时域宽度得到压缩的同时，光谱宽度也能得到同步压缩。     

模拟退火法在吸收薄膜的椭偏反演算法中的应用

将一种广泛用于求解复杂系统优化问题的技术－－模拟退火法－－用来求解椭偏反演方程。首先假设一个薄膜模型，计算出其相应的椭偏参数（Ψ，Δ）的值，在这个计算值的基础上加入不同标准偏差的高斯噪声；然后将加入噪声后的值（Ψm,Δm)作为模拟的测量数据，采用模拟退火算法进行求解，验证得知这种方法求得的薄膜参数很接近于假设的薄膜模型参数的真值，与其他文献的报道结果一致，而且在扩大搜寻范围时，仍然可以得到准确解，从而证明了该方法的可行性以及有效性。     

Microstructure of a-SiOx:H

A set of a-SiO_x:H (0.52 <x< 1.58) films are fabricated by plasma-enhanced-chemical-vapor-deposition (PECVD) method at the substrate temperature of 250°C. The microstructure and local bonding configurations of the films are investigated in detail using micro-Raman scattering, X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR). It is found that the films are structural inhomogeneous, with five phases of Si, Si₂O:H, SiO:H, Si₂O₃:H and SiO₂ that coexist. The phase of Si is composed of nonhydrogenated amorphous silicon (a-Si) clusters that are spatially isolated. The average size of the clusters decreases with the increasing oxygen concentration x in the films. The results indicate that the structure of the present films can be described by a multi-shell model, which suggests that a-Si cluster is surrounded in turn by the subshells of Si₂O:H, SiO:H, Si₂O₃:H, and SiO₂.     

Phonon–replica transitions in InGaN/GaN quantum well structures

A side-bump feature in a photoluminescence (PL) spectrum of an InGaN compound was widely observed. With reasonable fitting to PL spectra with three Gaussian distributions, the temperature variations of the peak positions, integrated PL intensities, and peak widths of the main and first side peaks of three InGaN/GaN multiple quantum well samples with different nominal indium contents are shown and interpreted. The existence of the side peaks is attributed to phonon–replica transitions. The variations of the peak position separations and the decreasing trends of the first side peak widths beyond certain temperatures in those samples were explained with the requirement of phonon momentum condition for phonon–replica transitions. In the sample with 25% nominal indium content, the phonon–replica transition could become stronger than the direct transition of localized states.     

Influence of fluoride on f-f transitions of Eu in LiEuM2O8 (M=Mo, W)

The influence of fluoride on the luminescence of LiEuM₂O₈ (M=Mo, W) was studied. LiEuMo₂O₈ and LiEuW₂O₈ formed the whole range of solid solutions, which emitted intense red luminescence under the excitations by 395, 465 and 535 nm wavelengths. When doped with fluoride, the materials also formed solid solutions and the luminescent intensity was remarkably enhanced. The phosphor with optimized compositions in this system would be a promising red component for solid-state lighting devices based on GaN light-emitting diodes.