Lattice disorder in silicon induced by 2.0 MeV Cu+ irradiation

The effect of 2.0 MeV Cu⁺ irradiation on Si(100) crystal has been studied by the Rutherford backscattering/channeling technique. Analysis of the lattice disorder distribution has been performed under 100 direction of tilting off from the target normal: 7°, 30°, and 45° as well as different doses. The lattice disorder distributions in Si(100) have been compared with TRIM'89 simulation. The results show that the lattice disorder distributions in Si(100) under different irradiation angles seem to be in good agreement with TRIM'89 simulation. When the dose increases up to 8.7×10¹⁴ ions/cm², the defect concentration increases leading to the formation of an amorphous layer.     

Oscillations of certain second order nonlinear differential equations

A second order nonlinear differential equation

双柱双泵高效液相色谱－电化学法测定尿中香草扁桃酸

采用双柱、双泵和双阀，通过住切换技术对尿中的香草扁桃酸（ＶＭＡ）进行直接进样分离，并用电化学检测器检测。样品先进入柱Ⅰ，初步分离后，包含ＶＭＡ的组分被切换入柱Ⅱ进一步分离。结果显示，此法操作简单、快速，回收率高，重复性好。     

Inclusion of ferrous phenanthroline in molybdenum disulfide

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