Quantum wire heterostructure for optoelectronic applications

Quantum wire (QWR) heterostructures suitable for optoelectronic applications should meet a number of requirements, including defect free interfaces, large subband separation, long carrier lifetime, efficient carrier capture. The structural and opticl properties of GaAs/AlGaAs and InGaAs/GaAs quantum wire (QWR) heterostructures grown by organometallic chemical vapor deposition on nonplanr substrates, which satisfy many of these criteria, are described. These crescent-shaped QWRs are formed in situ during epitaxial growth resulting in virtually defect free interfaces. Effective wire widths as small as 10nm have been achieved, corresponding to electron subband separations greater than K_BT at room temperature. The enhanced density of states at the QWR subbands manifests itself in higher optical absorption and emission as visualized in photoluminescence (PL), PL excitation, amplified spontaneous emission and lasing spectra of these structures. Effective carrier capture into the wires via connected quantum well regions, which is important for enhancing the otherwise extremely small capture cross section of these wires, has also been observed. Room temperature operation of GaAs/AlGaAs and strained InGaAs/GaAs QWR lasers with threshold currents as low as 0.6mA has been demonstrated.     

Magnetic,structural and electrical properties of ordered and disordered Co50Fe50 films

Co₅₀Fe₅₀ films with thickness varying from 100 to 500 Å were deposited on a glass substrate by sputtering process, respectively. Two kinds of CoFe films were studied: one was the as-deposited film, and the other the annealed film. The annealing procedure was to keep the films at 400 °C for 5 h in a vacuum of 5×10⁻⁶ mbar. From the X-ray study, we find that the as-deposited film prefers the CoFe(1 1 0) orientation. Moreover, the body-centered cubic (bcc) CoFe(1 1 0) line is split into two peaks: one corresponding to the ordered body-centered tetragonal (bct) phase, and the other, the disordered bcc phase. After annealing, the peak intensity of the ordered bct phase becomes much stronger, while that of the disordered bcc phase disappears. The annealing has also caused the ordered CoFe(2 0 0) line to appear. When the amount of the ordered bct phase in Co₅₀Fe₅₀ is increased, the saturation magnetization (M_s) and coercivity (H_c) become larger, but the electrical resistivity (ρ) decreases. From the temperature coefficient of resistance (TCR) measurement, we learn that the bct grains in the CoFe film start to grow at temperature 82 °C.     

Photoemission studies of oxygen adsorbed on a LiAl(1 1 0) alloy surface: Role of Li segregation

We investigated that the effect of the number of segregated Li atoms on the rate of oxidation on a LiAl alloy surface. Oxygen molecules adsorbed on the LiAl alloy react with the surface atoms to form stable oxides. The segregated Li atoms at reconstructed surfaces (c(2×2) and (2×1)) enhance the oxidation rate and form stable LiAlO_x and Li₂O. The degree of enhancement of oxidation by segregated Li atoms varies as a function of O₂ exposure and annealing temperature, where the latter is directly related to the mode of surface reconstruction by Li segregation.     

Dielectrophoretically aligned GaN nanowire rectifiers

We demonstrate GaN nanowire (NW) current rectifiers which were formed by assembling n-GaN nanowires on a patterned p-Si substrate by means of alternating current (ac) dielectrophoresis. The dielectrophoresis was accomplished at a frequency of 10 kHz with three different ac bias voltages (5, 10, and 15 V_p–p), indicating that the number of aligned GaN nanowires increased with increasing ac bias voltage. The n-GaN NW/p-Si diodes showed well-defined current rectifying behavior with a forward voltage drop of 1.2–1.5 V at a current density of 200 A/cm². We observed that the GaN NW diode functioned well as a half-wave rectifier. PACS 71.20.Nr; 73.40.Cg; 73.40.Ei; 73.40.Kp     

The effect of ITO films thickness on the properties of flexible organic light emitting diode

Indium tin oxide (ITO) thin films were deposited on cyclic olefin copolymer substrate at room temperature by an inverse target sputtering system. The crystal structure and the surface morphology of the deposited ITO films were examined by X-ray diffraction and atomic force microscopy, separately. The electrical properties of the conductive films were explored by four-point probing. Visible spectrometer was used to measure the optical properties of ITO-coated films. The performance of the flexible organic light emitting diode device with different thickness anode was investigated in this study.     

The Recognition of Double Euler Trails in Series-Parallel Networks

Given a series-parallel network (network, for short)N, its dual networkN′ is given by interchanging the series connection and the parallel connection of networkN. We usually use a series-parallel graph to represent a network. LetG[N] andG[N′] be graph representations ofNandN′, respectively. A sequence of edgese₁, e₂,…,e_kis said to form a common trail on (G[N], G[N′]) if it is a trail on bothG[N] andG[N′]. If a common trail covers all of the edges inG[N] andG[N′], it is called adouble Euler trail.However, there are many different graph representations for a network. We say that a networkNhas a double Euler trail (DET) if there is a common Euler trail for someG[N] and someG[N′]. Finding a DET in a network is essential for optimizing the layout area of a complementary CMOS functional cell. Maziasz and Hayes (IEEE Trans. Computer-Aided Design9(1990), 708–719) gave a linear time algorithm for solving the layout problem in fixedG[N] andG[N′] and an exponential algorithm for finding the optimal cover in a network without fixing graph representations. In this paper, we study properties of subnetworks of a DET network. According to these properties, we propose an algorithm that automatically generates the rules for composition of trail cover classes. On the basis of these rules, a linear time algorithm for recognizing DET networks is presented. Furthermore, we also give a necessary and sufficient condition for the existence of a double Euler circuit in a network.     

Wilcoxon signed rank test using ranked-set sample

Ranked-set sampling is useful when measurements are destructive or costly to obtain but ranking of the observations is relatively easy. The Wilcoxon signed rank test statistic based on the ranked-set sample is considered. We compared the asymptotic relative efficiencies of the RSS Wilcoxon signed rank test statistic with respect to the SRS Wilcoxon signed rank test statistic and the RSS sign test statistic. Throughout the ARE’s, the proposed test statistic is superior to the SRS Wilcoxon signed rank test statistic and the RSS sign test statistic.     

Limit distribution of the number of consecutive records

A succinct series expression is derived for describing the limit distribution of the number of times r consecutive elements are all records (in a sequence of independent and identically distributed random variables with a common continuous distribution) for all r ≥ 2. Previously, only the limit distributions for r = 1, 2, and 3 were known. © 2005 Wiley Periodicals, Inc. Random Struct. Alg., 2005     

Higher Fock Sectors in the Wick-Cutkosky Model

In the Wick-Cutkosky model we analyze nonperturbatively, in light-front dynamics, the contributions of two-body and higher Fock sectors to the total norm and electromagnetic form factor. It turns out that two- and three-body sectors always dominate. For a maximal value of the coupling constant α = 2π, corresponding to the zero bound-state mass M = 0, they contribute 90% to the norm. With decrease of α the two-body contribution increases up to 100%. The form factor asymptotic is always determined by a two-body sector.