浅析影响康普顿谱线位置的因素

康普顿散射中影响康普顿谱线位置的因素是十分复杂的,文章主要针对影响康普顿谱线位置的几个因素作了理论探讨,得出影响因素主要在于:电子具有初速度会增大散射波长的改变量;束缚能的存在要减小峰值波长的改变量;双光子散射和二次散射与谱线峰值位置的关系不大,二者对峰值波长的改变是不确定的、复杂的、在连续的范围内变化的.最后对康普顿谱线位置和康普顿轮廓的理论研究和应用前景作了展望.     

Strengthened Hyper-Raman Lines with the Coherent Superposition State

High-order harmonic generations from a one-dimensional Coulomb potential atom are calculated with the initial state prepared as a coherent superposition between its ground and first excited states. When the energy difference of the two states is small, we can choose proper laser pulse such that the first excited state can be excited only to other bound states instead of being ionized. We show that only the hyper-Raman lines are observable instead of the harmonics. The energy difference of the ground and the first excited state can be deduced from the highest peak of the hyper-Raman lines. We further show that the similar results can be obtained by using a combination of two laser pulses with different frequencies interacting with the atom initially at the ground state.     

Structural Change in Au^3＋-Doped BK7 Glass Irradiated by Femtosecond Laser

We report on structural change in an Au^3＋-doped BK7 glass irradiated by an infrared femtosecond laser at 800 nm. A grating structure is inscribed in the glass sample. The glass sample is then annealed at various temperatures. Structural change of the grating is observed by an optical microscope. Absorption spectra indicate that colour centres are induced after the laser irradiation, and they decrease with increasing annealing temperature. Au nanoparticles are precipitated at high temperatures （≥ 600℃）. The mechanisms of the phenomena are discussed.     

Effect of Pretreatment of TaN Substrates on Atomic Layer Deposition Growth of Ru Thin Films

The polycrystalline ruthenium films are grown on TaN substrates by atomic layer deposition （ALD） using bis（cyclopentadienyl） ruthenium [RuCp2] and oxygen as ruthenium precursor and reactant respectively at a deposition temperature of 330℃. The low-energy Ar ion bombardment and Ru pre-deposition are performed to the underlying TaN substrates before ALD process in order to improve the Ru nucleation. X-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy and atomic force microscopy are carried out to characterize the properties of ALD Ru films. The results show that the nucleation density of Ru films with Ar^＋ bombardment to the underlying TaN substrates is much higher than that of the ones without any pretreatment. The possible reasons are discussed.     

Growth of Semi-Insulating GaN Using N2 as Nucleation Layer Carrier Gas Combining with an Optimized Annealing Time

Semi-insulating （SI） GaN is grown using N2 as the nucleation layer （NL） carrier gas combined with an optimized annealing time by metalorganic chemical vapour deposition. Influence of using 1-12 and N2 as the NL carrier gas is investigated in our experiment. It is found that the sheet resistance of unintentionally doped GaN can be increased from 10^4 Ω/sq to 10^10 Ω/sq by changing the NL carrier gas from 1-12 to N2 while keeping the other growth parameters to be constant, however crystal quality and roughness of the tilm are degraded unambiguously. This situation can be improved by optimizing the NL annealing time. The high resistance of GaN grown on NL using N2 as the carrier gas is due to higher density of threading dislocations caused by the higher density of nucleation islands and small statistic diameter grain compared to the one using 1-12 as carrier gas. Annealing the NL for an optimized annealing time can decrease the density of threading dislocation and improve the tilm roughness and interface of AlGaN/GaN without degrading the sheet resistance of as-grown GaN signiticantly. High-quality SI GaN is grown after optimizing the annealing time, and AlGaN/GaN high electron mobility transistors are also prepared.     

Measurement of Gamma-Rays from 11ΛB and 12ΛC

From the ^12 C（π^＋,K^＋）^12 AC reaction the γ -rays of 261.6±0.24 ke V（7/2^＋ →5/2^＋）and 1481.7±0.7 ke V（1/2^＋ →5/2^＋） of ^11 A B,and 2667.3±2.8 keV（1^- 2 → 2^- 1）of ^12 A C hypernuclei have been identified using a large germanium detector array Hyperball2 at K6 beam line of KEK. The observed energies of the transitions 1481.7keV and 261.6 keV are significantly different from the values predicted by the shell model using the △ and SN parameters determined from the ^7 △ Li data.     

Coherent Structures in Transition of a Flat-Plate Boundary Layer at Ma = 0.7

Direct numerical simulation （DNS） of a spatially evolving fiat-plate boundary layer transition process at free stream Mach number 0. 7 is performed. Tollmien-Schlichting （T-S） waves are added on the inlet boundary as the disturbances before transition. Typical coherent structures in the transition process are investigated based on the second invariant of velocity gradient tensor. The instantaneous shear stress and the mean velocity profile in the transition region are studied. In our view, the fact that the peak value of shear stress in the stress concentration area increases and exceeds a threshold value during the later stage of the trallsition process plays an important role in the laminar breakdown process.     

Photon-Assisted Conductance Structure for a Quantum Dot

We investigate theoretically the electron transport of a two-level quantum dot irradiated under a weak laser field at low temperatures in the rotating wave approximation. Using the method of the Keldysh equation of motion for nonequilibrium Green function, we examine the conductance for the system with photon polarization perpendicular to the tunnelling current direction. It is demonstrated that by analytic analysing and numerical examples, a feature of conductance peak splitting appears, and the dependence of conductance on the incident laser frequency and self-energy are discussed.     

Creep Motion in Two-Dimensional Fully Frustrated Coulomb Gas Model

The creep motion in a two-dimensional fully frustrated square lattice Coulomb gas model with disorders is studied by using the Monte Carlo technique. The dependence of charge current density J on electric field E is investigated at low temperature T and at low E. The results show that the creep obeys the Arrhenius law J - C（T） exp[-U（E）/T]. The prefactor C（T） increases with the temperature in a power law relation with an exponent about 3.0. The energy barrier U （ E） increases logarithmically with Ec,/ E as U （ E） - Uo ln（ Ec/ E） with Ec being the critical field at zero temperature.     

Phase Transition and EOS of Marmatite （Zn0.76Fe0.23S） up to 623K and 17 GPa

In situ energy dispersive x-ray diffraction for natural marmatite （Zn0.76Fe0.23S） is performed up to 17. 7 GPa and 623 K. It is fit, ted by the Birch-Murnaghan equation of state （EOS） that Ko and α0 for marmatite are 85（3）GPa and 0.79（16）＊10^-4 K^-1, respectively. Fe^2＋ isomorphic replacing to Zn^2＋ in natural crystal is responsible for high bulk modulus and thermal expansivity of marmatite. Temperature derivative of bulk modulus （OK/OT）p for marmatite is fitted to be -0.044（23） GPaK^-1. The unambiguous B3-B1 phase boundaries for marmatite are determined to be Pupper（GPa）= 15.50 - 0.016T（℃） and Plower （GPa）=9.94-0.012T（℃） at 300-623K.