Formation of Interfacial Layers in LaAlO3/Silicon during Film Deposition

We have studied the interracial reactions between amorphous LaAlO3 thin films and Si substrates, using high- resolution transmission electron microscopy and x-ray photoelectron spectroscopy. It has been shown that the interracial layer between LaAlO3 film and Si substrate chemical states show that the ratio of La 4d3/2 to Al 2p is SiLaxAlyOz. The depth distributions of La, Si and Al of the interfacial layer remains unchanged with the depth compared to that of the LaAlO3 film. Moreover, the Si content, in the interracial layer gradually decreases with increasing thickness of the interracial layer. These results strongly suggest that the Al element is not deficient in the interracial layer, as previously believed, and the formation of a SiLaxAlyOz interracial layer is mainly due to the diffusion of Si from the substrate during the LaAlO3 film deposition. With the understanding of the interracial layer formation, ones can control the interface characteristics to ensure the desired performances of devices using high-k oxides as gate dielectrics.     

Application of Electron-Shelving Detection via 423 nm Transition in Calcium-Beam Optical Frequency Standard

A new scheme of small compact optical frequency standard based on thermal calcium beam with application of 423 nm shelving detection and sharp-angle velocity selection detection is proposed. Combining these presented techniques, we conclude that a small compact optical frequency standard based on thermal calcium beam will outperform the commercial caesium-beam microwave dock, like the 5071 Cs clock （from Hp to Agilent, now Symmetricom company）, both in accuracy and stability.     

Concurrence and Wigner-Yanase Skew Information

A measure of entanglement on n qubits is defined in terms of Wigner-Yanase skew information. It is shown that the measure coincides essentially with the concurrence on two qubits. This uncovers the information-theoretic meaning of the concurrence of entangled states.     

基于低功耗双边沿D触发器的任意进制异步计数器设计

从D触发器激励表入手，分别给出了采用单边沿D触发器和双边沿D触发器的2^n进制异步加法计数器、减法计数器的设计方法．在此基础上，采用逻辑函数修改技术，通过实例讨论了基于单边沿D触发器和双边沿D触发器的异步任意进制计数器的设计．该设计方法方便，快速，具有一定的实用意义．     

实时任务动态调度算法

任务调度算法是提高多任务系统效率的一种有效途径,特别是在时间紧迫环境下,实时任务调度算法更具有重要的应用价值.在研究建立实时任务调度模型方法的基础上,对模型进行理论分析,提出了实时任务调度的算法,并通过实例加以验证.     

硅中铜与电子辐照缺陷的相互作用

本文研究了FZ与CZ硅中铜与电子辐照缺陷的相互作用.实验表明,这种作用使扩铜并经电子辐照的n型FZ硅出现两个未经报道的新的深中心,E(0.043)和E(0.396).前者只存在于FZ硅而不存在于CZ硅.后者在扩铜并经电子辐照的n型FZ和CZ硅中都存在.电子辐照再加适当温度的热处理还可电激活硅中的铜,另外,铜的存在还使硅中双空位的退火温度显著地降低.种种实验表明,在硅中与铜有关的六个主要能级分别对应于六种不同结构的深中心,在这些深中心之中既包含铜又包含点缺陷.其中E(0.043)很可能是铜与间隙硅原子的络合物,而E(0.167)及H(0.411)则很可能是铜与空位的不同形态的络合物.     

建筑施工高处坠落的原因及对策

高处坠落事故是建筑施工伤亡事故的主要原因之一,有效防止高处坠落事故对预防建筑施工安全事故有着十分重要的意义.本文针对建筑施工高处坠落事故现象,进行了原因分析,并提出预防高处坠落的具体措施.     

孤立分散在SiO2基质中的半导体InSb纳米颗粒界面效应的MS-XANES研究

利用MS-XANES计算研究了嵌入在SiO₂介质中的InSb纳米颗粒的界面效应, 结果显示Sb K-XANES实验谱在白线峰强度增大和白线峰向高能一侧展宽这两个特点的起因是: 1. SiO₂介质透过界面处强的Sb-O共价键间接地影响和改变了InSb团簇中Sb原子内部的势分布; 2. 通过InSb纳米颗粒界面处存在着强的Sb-O共价键使得Sb原子的5p电子被耗尽来提高InSb纳米颗粒Sb原子的5p的空穴数. 这两方面共同决定了InSb纳米颗粒的Sb K-XANES实验谱在白线峰 强度的增大. 此外, 由于纳米颗粒的界面效应, 仅仅把白线峰的强度增大归因于吸收原子电荷转移带来的空穴数增加, 并依此通过白线峰的强度计算吸收原子的空穴数是不合理的.     

催化动力学光度法测定痕量铝

痕量铝在硝酸介质中能催化加速过氧化氢和高碘酸钾与二甲苯胺兰FF之间的褪色反应。研究了反应的最佳实验条件,建立了测定痕量铝的新方法。方法检出限为6.1×10-10gAl3+/mL,检测范围为0-1.0μgAl3+/25mL。本方法具有高灵敏度,选择性较好,操作简便,快速的特点。用以测定水样中的痕量铝,获得满意结果。     

具有时滞的非自治的捕食-食饵系统的全局吸引

考虑一个具有离散时滞的非自治的捕食—食饵系统。系统是由3种群组成的，其中一个为捕食者，另两个为食饵种群。本文的目的是给出时滞对系统的持续生存是无害的，从而确定了系统的周期解全局吸引的条件。